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FPF2165R

FPF2165R

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    WDFN6

  • 描述:

    IC PWR SWITCH P-CH 1:1 6MICROFET

  • 数据手册
  • 价格&库存
FPF2165R 数据手册
ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Full Function Load Switch with Adjustable Current Limit FPF2165R Description www.onsemi.com The FPF2165R is a load switch which provides full protection to systems and loads which may encounter large current conditions. The device contains a 0.12 W current−limited P−channel MOSFET which can operate over an input voltage range of 1.8−5.5 V. Internally, current is prevented from flowing when the MOSFET is off and the output voltage is higher than the input voltage. Switch control is by a logic input (ON) capable of interfacing directly with low−voltage control signals. The FPF2165R contains thermal shutdown protection, which shuts off the switch to prevent damage to the part when a continuous over−current condition causes excessive heating. When the switch current reaches the current limit, the part operates in a Constant−Current (CC) mode to prohibit excessive currents from causing damage. The FPF2165R does not turn off after a current limit fault; it remains in the constant current mode indefinitely. The minimum current limit is 150 mA. The FPF2165R is available in a space−saving 6−pin 2 mm x 2 mm Molded Leadless Package (MLP). Features • • • • • • • • • • (Bottom) (Top) Pin 1 WDFN6 2x2, 065P CASE 511CY Applications • • • • • • • 1.8 to 5.5 V Input Voltage Range Controlled Turn−On 0.15 − 1.5 A Adjustable Current Limit ±10% Current Limit Accuracy vs. Temperature Under−Voltage Lockout (UVLO) Thermal Shutdown < 2 mA Shutdown Current Fast Current Limit Response Time ♦ 5 ms to Moderate Over Currents ♦ 30 ns to Hard Shorts Reverse Current Blocking These Devices are Pb−Free and are RoHS Compliant PDAs Cell Phones GPS Devices MP3 Players Digital Cameras Peripheral Ports Hot Swap Supplies Related Resources • FPF2165R Product Information ORDERING INFORMATION Part Number Current Limit [mA] Current Limit Blanking Time [ms] Auto Restart Time [ms] On Pin Activity Top Mark Shipping† FPF2165R 150 − 1500 0 NA Active HI 65R 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D © Semiconductor Components Industries, LLC, 2020 July, 2020 − Rev. 1 1 Publication Order Number: FPF2165R/D FPF2165R Typical Application + − Figure 1. Typical Application Block Diagram Figure 2. Block Diagram Pin Configuration ON 6 GND 5 FLAGB 4 7 1 ISET 2 VIN 3 VOUT Figure 3. Pin Assignment (Top Through View) www.onsemi.com 2 FPF2165R PIN DESCRIPTIONS Name Type 1 ISET 2 VIN 3 VOUT 4 FLAGB 5, 7 GND 6 ON Description Current Limit Set Input: A resistor from ISET to ground sets the current limit for the switch Supply Input: Input to the power switch and the supply voltage for the IC Switch Output: Output of the power switch Fault Output: Active LO, open drain output which indicates an over−current supply under−voltage or over−temperature state Ground ON Control Input ABSOLUTE MAXIMUM RATINGS Symbol Parameter VIN VIN, VOUT, ON, FLAGB, ISET to GND PD Power Dissipation TSTG Operating and Storage Junction Temperature qJA Thermal Resistance, Junction to Ambient ESD Electrostatic Discharge Capability Min Max Unit −0.3 6.0 V 1.2 W 150 °C 86 °C/W −65 Human Body Model; JEDEC A1141 4000 Charged Device Model; JEDEC C101C 2000 Machine Model; JEDEC A115 400 IEC 61000−4−2 Air Discharge 15000 Contact Discharge 8000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VIN Input Voltage 1.8 5.5 V TA Ambient Operating Temperature −40 85 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 3 FPF2165R ELECTRICAL CHARACTERISTICS VIN = 1.8 to 5.5 V, TA = −40 to +85°C unless otherwise noted. Typical values are at VIN = 3.3 V and TA = 25°C. Symbol Parameter Conditions Min. Typ. Max. Unit 5.5 V 100 mA Basic Operation VIN Operating Voltage IQ Quiescent Current RON On Resistance 1.8 IOUT = 1 mA VIN = 1.8 V 63 VIN = 3.3 V 68 VIN = 5.5 V 77 120 VIN = 3.3 V, IOUT = 200 mA, TA = 25°C 120 160 VIN = 3.3 V, IOUT = 200 mA, TA = 85°C 135 180 VIN = 3.3 V, IOUT = 200 mA, TA = −40°C to +85°C VIL 95 124 VIN = 5 V, IOUT = 200 mA, TA = 85°C 110 143 58 ON Input Logic High Voltage (ON) VIN = 1.8 V 0.8 VIN = 5.5 V 1.4 ON Input Logic Low Voltage 180 VIN = 5 V, IOUT = 200 mA, TA = 25°C VIN = 5 V, IOUT = 200 mA, TA = −40°C to +85°C VIH 65 mW 143 V VIN = 1.8 V 0.5 VIN = 5.5 V 1 V ON Input Leakage VON = VIN or GND −1 1 mA VIN Shutdown Current VON = 0 V, VIN = 5.5 V, VOUT = Short to GND −2 2 mA V FLAGB Output Logic Low Voltage FLAGB Output High Leakage Current VIN = 5 V, ISINK = 10 mA 0.05 0.20 VIN = 1.8 V, ISINK = 10 mA 0.12 0.30 VIN = 5 V, Switch On 1 mA Reverse Block VOUT Shutdown Current 2 mA 150 165 mA 720 800 880 1350 1500 1650 VON = 0 V, VOUT = 5.5 V, VIN = Short to GND −2 VIN = 3.3 V, VOUT = 3.0 V, RSET = 1840 W 135 VIN = 3.3 V, VOUT = 3.0 V, RSET = 361 W VIN = 3.3 V, VOUT = 3.0 V, RSET = 196 W Protections ILIM Current Limit Thermal Shutdown UVLO Under−Voltage Shutdown Shutdown Threshold 140 Return from Shutdown 130 Hysteresis 10 VIN Increasing 1.55 Under−Voltage Shutdown Hysteresis 1.65 °C 1.75 V 50 mV Dynamic tdON Delay On Time RL = 500 W, CL = 0.1 mF 25 ms tdOFF Delay Off Time RL = 500 W, CL = 0.1 mF 45 ms tRISE VOUT Rise Time RL = 500 W, CL = 0.1 mF 10 ms tFALL VOUT Fall Time RL = 500 W, CL = 0.1 mF 110 ms Short−Circuit Response Time VIN = VOUT = 3.3 V, Moderate Over−Current Condition 5 ms VIN = VOUT = 3.3 V, Hard Short 30 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Package power dissipation on 1 square inch pad, 2 oz copper board. www.onsemi.com 4 FPF2165R TYPICAL PERFORMANCE CHARACTERISTICS Figure 4. Quiescent Current vs. Input Voltage Figure 5. Quiescent Current vs. Temperature Figure 6. VON High Voltage vs. Input Voltage Figure 7. VON Low Voltage vs. Input Voltage Figure 8. RON vs. VIN Figure 9. RON vs. Temperature www.onsemi.com 5 FPF2165R TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Figure 10. tdON / tdOFF vs. Temperature Figure 11. TRISE / TFALL vs. Temperature Figure 12. tdON Response Figure 13. tdOFF Response Figure 14. Current Limit Response Time (Switch Powered into Short) www.onsemi.com 6 FPF2165R Description of Operation For preventing the switch from large power dissipation during heavy load a short circuit detection feature is introduced. Short circuit condition is detected by observing the output voltage. The switch is put into short circuit current limiting mode if the switch is loaded with a heavy load. When the output voltage drops below VSCTH, short circuit detection threshold voltage, the current limit value re−conditioned and short circuit current limit value is decreased to 62.5% of the current limit value. This keeps the power dissipation of the part below a certain limit even at dead short conditions at 5.5 V input voltage. The VSCTH value is set to be 1 V. At around 1.1 V of output voltage the switch is removed from short circuit current limiting mode and the current limit is set to the current limit value. The FPF2165R is a current limited switch that protects systems and loads which can be damaged or disrupted by the application of high currents. The core of each device is a 0.12 W P−channel MOSFET and a controller capable of functioning over a wide input operating range of 1.8−5.5 V. The controller protects against system malfunctions through current limiting, under−voltage lockout and thermal shutdown. The current limit is adjustable from 0.15 A to 1.5 A through the selection of an external resistor. On/Off Control The ON pin controls the state of the switch. When ON is high, the switch is in the On state. Activating ON continuously holds the switch in the On state so long as there is no fault. An under−voltage on VIN or a junction temperature in excess of 140°C overrides the ON control to turn off the switch. The FPF2165R does not turn off in response to an over−current condition but instead remains operating in a constant current mode so long as ON is active and the thermal shutdown or under−voltage lockout have not activated. The ON pin control voltage and VIN pin have independent recommended operating ranges. The ON pin voltage can be driven by a voltage level higher than the input voltage. Under−Voltage Lockout The under−voltage lockout turns−off the switch if the input voltage drops below the under−voltage lockout threshold. With the ON pin active the input voltage rising above the under−voltage lockout threshold causes a controlled turn−on of the switch which limits current over−shoots. Reverse Current Blocking Upon the detection of an over−current, an input under− voltage, or an over−temperature condition, the FLAGB signals the fault mode by activating LOW. With the FPF2165R, FLAGB is LOW during the faults and immediately returns HI at the end of the fault condition. FLAGB is an open−drain MOSFET which requires a pull− up resistor between VIN and FLAGB. During shutdown, the pull−down on FLAGB is disabled to reduce current draw from the supply. The FPF2165R family has a Reverse Current Blocking feature that protects input source against current flow from output to input. For a standard USB power design, this is an important feature that protects the USB host from being damaged due to reverse current flow on VBUS. The reverse−current blocking feature is active when the load switch is turned off. If ON pin is LOW and output voltage becomes greater than input voltage, no current can flow from the output to the input. FLAGB operation is independent of the reverse current blocking and does not report a fault condition if this feature is activated. Current Limiting Thermal Shutdown The current limit ensures that the current through the switch doesn’t exceed a maximum value while not limiting at less than a minimum value. The current at which the parts will limit is adjustable through the selection of an external resistor connected to ISET. Information for selecting the resistor is found in the Application Info section. The FPF2165R has no current limit blanking period so it remains in a constant−current state until the ON pin is deactivated or the thermal shutdown turns−off the switch. The thermal shutdown protects the die from internally or externally generated excessive temperatures. During an over−temperature condition the FLAGB is activated and the switch is turned−off. The switch automatically turns−on again if temperature of the die drops below the threshold temperature. Fault Reporting www.onsemi.com 7 FPF2165R APPLICATIONS INFORMATION Figure 15. Typical Application Setting Current Limit Input Capacitor The FPF2165R has a current limit which is set with an external resistor connected between ISET and GND. This resistor is selected by using equation (1), To limit the voltage drop on the input supply caused by transient in−rush currents when the switch is turned on into a discharged load capacitor or a short−circuit; a capacitor needs to be placed between VIN and GND. A 4.7 mF ceramic capacitor, CIN, must be placed close to the VIN pin. A higher value of CIN can be used to further reduce the voltage drop experienced as the switch is turned on into a large capacitive load. I LIM + 340.1 R SET *1.0278 (eq. 1) Table 1 can be used to select RSET. A typical application would be the 500 mA current that is required by a single USB port. Using Table 1 an appropriate selection for the RSET resistor would be 570 W. Output Capacitor A 0.1 mF capacitor COUT, should be placed between VOUT and GND. This capacitor prevents parasitic board inductances from forcing VOUT below GND when the switch turns−off. Table 1. CURRENT LIMIT VARIOUS RSET VALUES RSET [W] Min. Current Limit [mA] Typ. Current Limit [mA] Max. Current Limit [mA] 1840 135 150 165 1391 180 200 220 Power Dissipation 937 270 300 330 708 360 400 440 632 405 450 495 570 450 500 550 During normal operation as a switch, the power dissipated in the part depends upon the level at which the current limit is set. The maximum allowed setting for the current limit is 0.77 A and this results in a power dissipation of, 478 540 600 660 411 630 700 770 361 720 800 880 322 810 900 990 290 900 1000 1100 265 990 1100 1210 243 1080 1200 1320 225 1170 1300 1430 209 1260 1400 1540 196 1350 1500 1650 P + (I LIM) 2 R DS + (0.77) 2 0.12 + 71.148 mW (eq. 2) If the part goes into current limit the maximum power dissipation occurs when the output is shorted to ground. This is more power than the package can dissipate, but the thermal shutdown of the part activates to protect the part from damage due to excessive heating. A short on the output causes the part to operate in a constant−current state dissipating a worst case power of, P(max) + V IN(max) I LIM(max) + 5.5 0.77 + 4.235 W (eq. 3) This large amount of power activates the thermal shutdown and the part cycles in and out of thermal shutdown so long as the ON pin is active and the short is present. www.onsemi.com 8 FPF2165R Board Layout The middle pad (pin 7) should be connected to the GND plate of PCB for improving thermal performance of the load switch. An improper layout could result higher junction temperature and triggering the thermal shutdown protection feature. This concern applies when the switch is set at higher current limit value and an over−current condition occurs. In this case power dissipation of the switch (PD = (VIN − VOUT) x ILIM(max)) could exceed the maximum absolute power dissipation of 1.2 W. For best performance, all traces should be as short as possible. To be most effective, the input and output capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have on normal and short−circuit operation. Using wide traces for VIN, VOUT and GND helps minimize parasitic electrical effects along with minimizing the case−to−ambient thermal impedance. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 511CY ISSUE O 0.05 C 2.0 DATE 31 JUL 2016 A 1.72 2X 1.68 B 6 4 0.15 2.0 1.21 0.90 2.25 0.52(6X) 0.05 PIN#1 IDENT TOP VIEW C 1 2X 3 0.42(6X) 0.65 RECOMMENDED LAND PATTERN 0.75±0.05 0.10 C 0.20±0.05 0.08 NOTES: C SIDE VIEW 0.025±0.025 C A. PACKAGE DOES NOT FULLY CONFORM TO JEDEC MO−229 REGISTRATION SEATING PLANE B. DIMENSIONS ARE IN MILLIMETERS. 2.00±0.05 C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. 1.40±0.05 (0.70) (0.20)4X PIN #1 IDENT 1 0.32±0.05 D. LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. 3 (0.40) (6X) 0.80±0.05 (0.60) 6 4 0.30±0.05 0.65 1.30 BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON13613G WDFN6 2X2, 0.65P (6X) 0.10 C 0.05 C A B Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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