Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FPF2C8P2NL07A
F2, 3-phase, 3-level NPC module with Press-fit / NTC
General Description
Fairchild's new inverter modules provide low conduction and
switching loss as well. And Press-Fit technology provides simple and reliable mounting. These modules are optimized for the
applications such as solar inverter and UPS where a high efficiency and robust design is needed.
Electrical Features
• High Efficiency
* typical appearance
• Low Conduction and Switching Losses
Package Code: F2
• Field Stop IGBT for Inner and Outer Switch
• STEALTHTM Diode for Path Diode
• Built-in NTC for Temperature Monitoring
Mechanical Features
• Compact Size : F2 Package
• Press-fit Contact Technology
• Al2O3 Substrate with Low Thermal Resistance
Applications
• Solar Inverter
• UPS
Related Materials
• AN-4167: Mounting Guideline for F1 / F2 Modules with
Press-Fit Pins
Internal Circuit Diagram
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity / Tray
FPF2C8P2NL07A
FPF2C8P2NL07A
F2
Tray
14
©2015 Fairchild Semiconductor Corporation
FPF2C8P2NL07A Rev. 1.1
1
www.fairchildsemi.com
FPF2C8P2NL07A - F2, 3-phase, 3-level NPC module with Press-fit / NTC
June 2015
Symbol
TC = 25oC unless otherwise noted.
Description
Rating
Units
Outer IGBT(Q1, Q4, Q5, Q8, Q9, Q12)
VCES
Collector-Emitter Voltage
650
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Continuous Collector Current
@ TC = 80 °C, TJmax = 175 °C
30
A
ICM
Pulsed Collector Current
limited by TJmax
60
A
PD
Maximum Power Dissipation
@ TC = 25 °C
135
W
TJ
Operating Junction Temperature
- 40 to + 150
°C
Inner IGBT(Q2, Q3, Q6, Q7, Q10, Q11)
VCES
Collector-Emitter Voltage
650
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Continuous Collector Current
@ TC = 80 °C, TJmax = 175 °C
50
A
ICM
Pulsed Collector Current
limited by TJmax
100
A
PD
Maximum Power Dissipation
@ TC = 25 °C
174
W
TJ
Operating Junction Temperature
- 40 to + 150
°C
4
S
650
V
@ TC = 80 °C, TJmax = 175 °C
15
A
30
A
@ TC = 25 °C
100
W
- 40 to + 150
°C
- 40 to + 125
°C
2500
V
Outer - Inner IGBT Series Connection
SCWT
Short Circuit Withstand Time
VDC = 300 V, VGE = 15 V
TC = 25 °C
Diode
VRRM
Peak Repetitive Reverse Voltage
IF
Continuous Forward Current
IFM
Maximum Forward Current
PD
Maximum Power Dissipation
TJ
Operating Junction Temperature
Module
TSTG
Storage Temperature
VISO
Isolation Voltage
Iso._Material
Internal Isolation Material
TMOUNT
Mounting Torque
Creepage
Clearance
@ AC 1 min.
Al2O3
2.0 to 5.0
Nm
Terminal to Heat Sink
11.5
mm
Terminal to Terminal
6.3
mm
Terminal to Heat Sink
10.0
mm
Terminal to Terminal
5.0
mm
©2015 Fairchild Semiconductor Corporation
FPF2C8P2NL07A Rev. 1.1
2
www.fairchildsemi.com
FPF2C8P2NL07A - F2, 3-phase, 3-level NPC module with Press-fit / NTC
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
650
-
-
V
Outer IGBT
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0 V, IC = 1 mA
ICES
Collector Cut-off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
Gate-Emitter Leakage Current
VGE = VGES, VCE = 0 V
-
-
2
A
On Characteristics
VGE(th)
Gate-Emitter Threshold Voltage
VGE = VCE, IC = 30 mA
4.5
5.6
6.7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 30 A, VGE = 15 V
-
1.55
2.2
V
IC = 30 A, VGE = 15 V @TC = 125 °C
-
1.75
-
V
IC = 60 A, VGE = 15 V
-
2.13
-
V
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
EON
Turn-On Switching Loss per Pulse
EOFF
Turn-Off Switching Loss per Pulse
td(on)
Turn-On Delay Time
VCC = 300 V
IC = 30 A
VGE = ± 15 V
RG = 20
Inductive Load
TC = 25 °C
VCC = 300 V
IC = 30 A
VGE = ± 15 V
RG = 20
Inductive Load
TC = 125 °C
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
EON
Turn-On Switching Loss per Pulse
EOFF
Turn-Off Switching Loss per Pulse
Qg
Total Gate Charge
VCC = 300 V, IC = 30 A, VGE = ± 15 V
RJC
Thermal Resistance of Junction to Case
per Chip
-
33
-
ns
-
43
-
ns
-
197
-
ns
-
17
-
ns
-
0.68
-
mJ
-
0.38
-
mJ
-
29
-
ns
-
50
-
ns
-
205
-
ns
-
25
-
ns
-
0.86
-
mJ
-
0.52
-
mJ
-
0.26
-
C
-
-
1.11
°C/W
Inner IGBT
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0 V, IC = 1 mA
650
-
-
V
ICES
Collector Cut-off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
Gate-Emitter Leakage Current
VGE = VGES, VCE = 0 V
-
-
2
A
On Characteristics
VGE(th)
Gate-Emitter Threshold Voltage
VGE = VCE, IC = 50 mA
4.5
5.6
6.7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 50 A, VGE = 15 V
-
1.65
2.3
V
IC = 50 A, VGE = 15 V @TC = 125 °C
-
1.95
-
V
IC = 100 A, VGE = 15 V
-
2.49
-
V
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
EON
Turn-On Switching Loss per Pulse
EOFF
Turn-Off Switching Loss per Pulse
td(on)
Turn-On Delay Time
tr
Rise Time
VCC = 300 V
IC = 50 A
VGE = ± 15 V
RG = 15
Inductive Load
TC = 25 °C
VCC = 300 V
IC = 50 A
VGE = ± 15 V
RG = 15
Inductive Load
TC = 125 °C
-
41
-
ns
-
65
-
ns
-
233
-
ns
-
18
-
ns
-
0.87
-
mJ
-
0.77
-
mJ
-
39
-
ns
-
76
-
ns
-
243
-
ns
-
20
-
ns
-
0.99
-
mJ
-
0.93
-
mJ
td(off)
Turn-Off Delay Time
tf
Fall Time
EON
Turn-On Switching Loss per Pulse
EOFF
Turn-Off Switching Loss per Pulse
Qg
Total Gate Charge
VCC = 300 V, IC = 50 A, VGE = ± 15 V
-
0.39
-
nC
RJC
Thermal Resistance of Junction to Case
per Chip
-
-
0.86
°C/W
©2015 Fairchild Semiconductor Corporation
FPF2C8P2NL07A Rev. 1.1
3
www.fairchildsemi.com
FPF2C8P2NL07A - F2, 3-phase, 3-level NPC module with Press-fit / NTC
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
IF = 15 A
-
2.55
3.4
V
IF = 15 A @TC = 125 °C
-
1.78
-
V
Diode
VFM
Diode Forward Voltage
IR
Reverse Leakage Current
VR = 650 V
-
-
250
A
trr
Reverse Recovery Time
-
23
-
ns
Irr
Reverse Recovery Current
-
9.9
-
A
Qrr
Reverse Recovery Charge
VR = 300 V, IF = 15 A
diF / dt = 700 A/us
TC = 25 °C
-
113
-
nC
trr
Reverse Recovery Time
ns
Irr
Reverse Recovery Current
Qrr
RJC
-
49
-
-
15.2
-
A
Reverse Recovery Charge
VR = 300 V, IF = 15 A
diF / dt = 700 A/us
TC = 125 °C
-
366
-
nC
Thermal Resistance of Junction to Case
per Chip
-
-
1.44
°C/W
k
NTC_ Thermistor
RNTC
Rated Resistance
TC = 25 °C
-
5.0
-
TC = 100 °C
-
493
-
Tolerance
TC = 25 °C
-5
-
+5
%
PD
Power Dissipation
TC = 25 °C
-
-
20
mW
BValue
B-Constant
B25/50
-
3375
-
K
B25/100
-
3436
-
K
©2015 Fairchild Semiconductor Corporation
FPF2C8P2NL07A Rev. 1.1
4
www.fairchildsemi.com
FPF2C8P2NL07A - F2, 3-phase, 3-level NPC module with Press-fit / NTC
Electrical Characteristics TC = 25°C unless otherwise noted.
Fig 1. Typical Output Characteristics
- Outer IGBT
Fig 2. Typical Output Characteristics
- Outer IGBT
90
VGE = 19 V
17 V
15 V
13 V
11 V
9V
60
Collector Current, IC [A]
Collector Current, IC [A]
90
30
0
TC = 25 °C
0
1
2
3
4
60
30
0
5
VGE = 19 V
17 V
15 V
13 V
11 V
9V
TC = 125 °C
0
1
Collector-Emitter Voltage, VCE [V]
Switching Loss [mJ]
Collector Current, IC [A]
5
3.0
with an inductive load
VCE = 300 V
VGE = ± 15 V
Rg = 20
TC = 25 °C
TC = 125 °C
2.5
60
30
Common Emitter
VGE = 15 V
TC = 25°C
TC = 80°C
TC = 125°C
0
1
2
3
4
2.0
EON
1.5
1.0
EOFF
0.5
0.0
5
0
10
Collector-Emitter Voltage, VCE [V]
Fig 5. Switching Loss vs. Gate Resistance
- Outer IGBT
20
30
40
50
60
Collector Current, IC [A]
70
Fig 6. Transient Thermal Impedance
- Outer IGBT
10
with an inductive load
VCE = 300 V
VGE = ± 15 V
IC = 30 A
TC = 25 °C
TC = 125 °C
2.5
2.0
Thermal Response, ZJC(t) [C/W]
3.0
Switching Loss [mJ]
4
Fig 4. Switching Loss vs. Collector Current
- Outer IGBT
90
EON
1.5
1.0
EOFF
0.5
0.0
3
Collector-Emitter Voltage, VCE [V]
Fig 3. Typical Saturation Voltage Characteristics
- Outer IGBT
0
2
0
20
40
80
Gate Resistance, RG []
©2015 Fairchild Semiconductor Corporation
FPF2C8P2NL07A Rev. 1.1
60
100
1
0.5
0.3
0.1 0.1
0.05
0.02
0.01
0.01
t1
Single Pulse
t2
Duty Factor, D = t1/t2
TJ - TC = PDM*ZJC(t)
1E-3
1E-5
120
PDM
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration, t1 [sec]
5
www.fairchildsemi.com
FPF2C8P2NL07A - F2, 3-phase, 3-level NPC module with Press-fit / NTC
Typical Performance Characteristic
Fig 7. Typical Output Characteristics
- Inner IGBT
Fig 8. Typical Output Characteristics
- Inner IGBT
150
150
19 V
17 V
15 V
13 V
11 V
9V
Collector Current, IC [A]
120
90
VGE =
60
30
0
TC = 25 °C
0
1
2
3
4
90
60
30
0
5
TC = 125 °C
0
1
Fig 9. Typical Saturation Voltage Characteristics
- Inner IGBT
with an inductive load
VCE = 300 V
VGE = ± 15 V
Rg = 15
TC = 25 °C
TC = 125 °C
3
Switching Loss [mJ]
Collector Current, IC [A]
4
5
4
120
90
60
Common Emitter
VGE = 15 V
TC = 25°C
TC = 80°C
TC = 125°C
30
0
1
2
3
4
EOFF
1
0
5
EON
2
0
20
40
60
80
100
120
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
Fig 11. Switching Loss vs. Gate Resistance
- Inner IGBT
Fig 12. Transient Thermal Impedance
- Inner IGBT
10
with an inductive load
VCE = 300 V
VGE = ± 15 V
IC = 50 A
TC = 25 °C
TC = 125 °C
5
4
Thermal Response, ZJC(t) [C/W]
6
Switching Loss [mJ]
3
Fig 10. Switching Loss vs. Collector Current
- Inner IGBT
150
EON
3
EOFF
2
1
0
2
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
0
19 V
17 V
15 V
13 V
11 V
9V
120
Collector Current, IC [A]
VGE =
0
20
40
80
Gate Resistance, RG []
©2015 Fairchild Semiconductor Corporation
FPF2C8P2NL07A Rev. 1.1
60
100
1
0.5
0.3
0.1 0.1
0.05
0.01
t1
Single Pulse
t2
Duty Factor, D = t1/t2
TJ - TC = PDM*ZJC(t)
1E-3
1E-5
120
PDM
0.02
0.01
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration, t1 [sec]
6
www.fairchildsemi.com
FPF2C8P2NL07A - F2, 3-phase, 3-level NPC module with Press-fit / NTC
Typical Performance Characteristic
Fig 13. Reverse Bias Safe Operating Area (RBSOA)
- Outer IGBT
Fig 14. Reverse Bias Safe Operating Area (RBSOA)
- Inner IGBT
90
150
60
30
0
0
100
200
300
400
500
600
VGE = ± 15 V
Rg = 15
TC = 150 °C
120
Collector Current, IC [A]
Collector Current, IC [A]
VGE = ± 15 V
Rg = 20
TC = 150 °C
90
60
30
0
700
0
100
Collector-Emitter Voltage, VCE [V]
Fig 15. Typical Forward Voltage Drop
- Diode
300
400
500
600
700
Fig 16. Reverse Recovery Energy vs. Forward Current
- Diode
60
0.06
Reverse Recovery Energy, Erec [mJ]
TC = 25°C
TC = 80°C
TC = 125°C
Forward Current, IF [A]
200
Collector-Emitter Voltage, VCE [V]
45
30
15
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.05
0.04
0.03
0.02
0.01
0.00
4.0
Rg = 20
TC = 25°C
TC = 125°C
0
5
Forward Voltage, VF [V]
10
15
20
25
30
Forward Current, IF [V]
Fig 17. Reverse Recovery Energy vs. Gate Resistance Fig 18. Transient Thermal Impedance
- Diode
- Diode
10
IF = 15 A
TC = 25°C
TC = 125°C
0.05
Thermal Response, ZJC(t) [C/W]
Reverse Recovery Energy, Erec [mJ]
0.06
0.04
0.03
0.02
0.01
0.00
0
20
40
Gate Resistance, RG []
©2015 Fairchild Semiconductor Corporation
FPF2C8P2NL07A Rev. 1.1
60
80
1
0.5
0.3
0.1
0.1 0.05
0.02
0.01
Single Pulse
t1
0.01
1E-3
1E-5
100
PDM
t2
Duty Factor, D = t1/t2
TJ - TC = PDM*ZJC(t)
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration, t1 [sec]
7
www.fairchildsemi.com
FPF2C8P2NL07A - F2, 3-phase, 3-level NPC module with Press-fit / NTC
Typical Performance Characteristic
FPF2C8P2NL07A - F2, 3-phase, 3-level NPC module with Press-fit / NTC
Internal Circuit Diagram
+
Q1
Q5
Q9
G1
G5
G9
E1
E5
E9
D1
D3
Q2
G2
D5
Q6
G6
E2
E6
E10
U
M
V
Q3
W
Q7
Q11
G3
G7
G11
E3
E7
E11
Q4
D2
Q10
G10
Q8
D4
D6
G4
G8
G12
E4
E8
E12
T1
Q12
T2
-
Package Outlines [mm]
5.0±0.1
62.8±0.5
48±0.3
42.5±0.15
4.5±0.1
(53.0)
1.4±0.2
2.3 X 8.5
16.4±0.2
SIDE VIEW
22.7±0.3
51.0±0.15
56.7±0.3
24.0
TOP VIEW
24.0
20.8
20.8
17.6
14.4
8.0
8.0
4.8
4.8
1.6
1.6
FRONT VIEW
E8
+ +
-
26.5
21.3
G8
U
M M
V
G12
E11 G11 T1
G5
E5
G9
E9
E7 G7
E12
6.4 6.4
12.8
9.6
16.0
16.0
G4
E4
E1 G1
E2 G2
E3 G3
DETAIL A
: END HOLE SIZE
(SCALE N/A)
G10
T2
E6 G6
W E10
3.2
26.5
21.3
3.2
DETAIL A
12.0±0.35
14.4
16.4±0.5
17.6
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE DOES NOT COMPLY
TO ANY CURRENT PACKAGING STANDARD
B) ALL DIMENSIONS ARE IN MILLIMETERS
C) ( ) IS REFERENCE
D) DRAWING FILENAME : 8P2NL07AREV1
4x 2.8
2x 9.0
PCB HOLE PATTERN RECOMMENDATION
- PIN-GRID 3.2mm
- TOLERANCE OF PCB HOLE PATTERN
©2015 Fairchild Semiconductor Corporation
FPF2C8P2NL07A Rev. 1.1
0.1
8
www.fairchildsemi.com
FPF2C8P2NL07A - F2, 3-phase, 3-level NPC module with Press-fit / NTC
©2015 Fairchild Semiconductor Corporation
FPF2C8P2NL07A Rev. 1.1
9
www.fairchildsemi.com
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
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