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N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
Description
This N-Channel enhancement mode power MOSFET is
Features
produced using ON Semiconductor’s proprietary planar stripe
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V,
ID = 5.7 A
and DMOS technology. This advanced MOSFET technology
• Low Gate Charge (Typ. 72 nC)
and to provide superior switching performance and high
has been especially tailored to reduce on-state resistance,
• Low Crss (Typ. 30 pF)
avalanche energy strength. These devices are suitable for
• 100% Avalanche Tested
switched mode power supplies, active power factor correction
• RoHS compliant
(PFC), and electronic lamp ballasts.
D
G
G
D
TO-3PN
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
Parameter
ID
Drain Current
FQA11N90-F109
900
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
IDM
Drain Current
VGSS
Gate to Source Voltage
- Pulsed
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
- Derate Above 25oC
A
7.2
A
A
± 30
V
(Note 2)
1000
mJ
(Note 1)
11.4
A
30
mJ
4.0
V/ns
(Note 3)
PD
11.4
45.6
(Note 1)
(TC = 25oC)
Unit
V
300
W
2.38
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case, Max
RθJA
Thermal Resistance, Junction to Ambient, Max
©2006 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
FQA11N90-F109
1
Unit
0.42
o
C/W
40
o
C/W
Publication Order Number:
FQA11N90-F109/D
FQA11N90-F109 — N-Channel QFET® MOSFET
FQA11N90-F109
Device Marking
FQA11N90
Device
FQA11N90-F109
Electrical Characteristics
Symbol
Package
TO-3PN
Reel Size
Tube
Tape Width
N/A
Quantity
30 units
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
900
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
--
1.0
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
VDS = 900 V, VGS = 0 V
--
--
10
μA
VDS = 720 V, TC = 125°C
--
--
100
μA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
VDS = VGS, ID = 250 μA
3.0
--
5.0
V
VGS = 10 V, ID = 5.7 A
--
0.75
0.96
Ω
VDS = 50 V, ID = 5.7 A
--
12
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
2700
3500
pF
--
260
340
pF
--
30
40
pF
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 450 V, ID = 11.4 A,
RG = 25 Ω
(note 4)
VDS = 720 V, ID = 11.4 A,
VGS = 10 V
(note 4)
--
65
140
ns
--
135
280
ns
--
165
340
ns
--
90
190
ns
--
72
94
nC
--
16
--
nC
--
35
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
11.4
A
ISM
--
--
45.6
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 11.4 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
850
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 11.4 A,
dIF / dt = 100 A/μs
--
11.2
--
μC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 15 mH, IAS = 11.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 11.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
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2
FQA11N90-F109 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
25 C
0
10
o
-55 C
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
2.0
VGS = 10V
1.6
VGS = 20V
1.2
0.8
※ Note : TJ = 25℃
0.4
1
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
8
16
24
32
40
10
0.2
0.4
0.6
ID, Drain Current [A]
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
4500
Ciss
4000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
5000
3500
Capacitance [pF]
25℃
Coss
3000
2500
2000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
1500
1000
500
VDS = 180V
10
VDS = 450V
VDS = 720V
8
6
4
2
※ Note : ID = 11.4 A
0
-1
10
0
10
0
1
10
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
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3
Figure 6. Gate Charge Characteristics
FQA11N90-F109 — N-Channel QFET® MOSFET
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 5.7 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
12
Operation in This Area
is Limited by R DS(on)
10
1
10
DC
1 ms
10 ms
100 μs
10 μs
0
10
※ Notes :
-1
10
o
1. TC = 25 C
8
6
4
2
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10
1
2
10
0
25
3
10
10
50
75
100
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
-1
※ N o te s :
1 . Z θ J C ( t) = 0 . 4 2 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
PDM
0 .0 5
t1
0 .0 2
10
0 .0 1
-2
t2
s in g le p u ls e
10
-5
10
-4
125
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
ZθJC(t), Thermal Response [oC/W]
Zθ JC(t), Thermal Response
ID, Drain Current [A]
10
ID, Drain Current [A]
2
10
-3
10
-2
10
-1
10
0
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
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4
10
1
150
FQA11N90-F109 — N-Channel QFET® MOSFET
Typical Characteristics
FQA11N90-F109 — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
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5
Time
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
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6
VDD
FQA11N90-F109 — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQA11N90-F109 — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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