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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FQA19N60
N-Channel QFET® MOSFET
600 V, 18.5 A, 380 mΩ
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
• 18.5 A, 600 V, RDS(on) = 380 mΩ (Max.) @ VGS = 10 V,
ID = 9.3 A
• Low Gate Charge (Typ. 70 nC)
• Low Crss (Typ. 35 pF)
• 100% Avalanche Tested
D
G
G
D
TO-3PN
S
Absolute Maximum Ratings T
Symbol
VDSS
ID
S
o
C
= 25 C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
FQA19N60
Unit
600
V
18.5
A
11.7
A
74
A
±30
V
(Note 2)
1150
mJ
Avalanche Current
(Note 1)
18.5
A
Repetitive Avalanche Energy
(Note 1)
30
mJ
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 3)
4.5
300
2.38
-55 to +150
Vns
W
W/°C
°C
300
°C
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8 from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
FQA19N60
Unit
Thermal Resistance, Junction-to-Case, Max.
0.42
°CW
RθCS
Thermal Resistance, Case-to-Sink, Typ.
0.24
°CW
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
40
°CW
Parameter
©2000 Fairchild Semiconductor Corporation
FQA19N60 Rev. C2
1
www.fairchildsemi.com
FQA19N60 — N-Channel QFET® MOSFET
April 2014
Part Number
FQA19N60
Electrical Characteristics T
Symbol
Package
TO-3PN
Top Mark
FQA19N60
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
o
C
= 25 C unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
600
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.65
VDS = 600 V, VGS = 0 V
--
--
10
µA
VDS = 480 V, TC = 125°C
--
--
100
µA
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 9.3 A
--
0.3
0.38
Ω
gFS
Forward Transconductance
VDS = 50 V, ID = 9.3 A
--
16
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
2800
3600
pF
--
350
450
pF
--
35
45
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 18.5 A,
RG = 25 Ω
(Note 4)
VDS = 480 V, ID = 18.5 A,
VGS = 10 V
(Note 4)
--
65
140
ns
--
210
430
ns
--
150
310
ns
--
135
280
ns
--
70
90
nC
--
17
--
nC
--
33
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
18.5
A
ISM
--
--
74
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 18.5 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
420
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 18.5 A,
dIF / dt = 100 A/µs
--
4.7
--
µC
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 6.2 mH, IAS = 18.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 18.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
©2000 Fairchild Semiconductor Corporation
FQA19N60 Rev. C2
2
www.fairchildsemi.com
FQA19N60 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
1
ID , Drain Current [A]
ID, Drain Current [A]
Top :
0
10
10
150
25
0
10
-55
Notes :
1. VDS = 50V
2. 250s Pulse Test
Notes :
1. 250s Pulse Test
2. TC = 25
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.2
IDR , Reverse Drain Current [A]
RDS(ON) [ ],
Drain-Source On-Resistance
1.0
VGS = 10V
0.8
VGS = 20V
0.6
0.4
0.2
1
10
0
10
150
25
Notes :
1. VGS = 0V
2. 250s Pulse Test
Note : TJ = 25
0.0
-1
0
10
20
30
40
60
10
70
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
5000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
Ciss
3000
Coss
VDS = 120V
10
VGS, Gate-Source Voltage [V]
Capacitance [pF]
50
2000
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
1000
VDS = 300V
VDS = 480V
8
6
4
2
Note : ID = 18.5 A
0
-1
10
0
0
10
0
1
10
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor Corporation
FQA19N60 Rev. C2
15
30
45
60
75
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQA19N60 — N-Channel QFET® MOSFET
Typical Characteristics
(Continued)
3.0
2.5
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
1.2
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
0
50
100
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 9.3 A
0.5
150
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
20
Operation in This Area
is Limited by R DS(on)
2
16
100 µs
10 µs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
1
10
10 ms
DC
0
10
Notes :
12
8
4
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
10
1
2
10
0
25
3
10
10
50
Figure 9. Maximum Safe Operating Area
ZθJC(t), Thermal Response [oC/W]
75
100
125
150
TC, Case Temperature []
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
-1
N o te s :
1 . Z J C ( t) = 0 .4 2 /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C ( t)
0 .2
0 .1
0 .0 5
PDM
0 .0 2
10
10
t1
0 .0 1
-2
-5
t2
s i n g l e p u ls e
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Rectangular Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQA19N60 Rev. C2
4
www.fairchildsemi.com
FQA19N60 — N-Channel QFET® MOSFET
Typical Characteristics
FQA19N60 — N-Channel QFET® MOSFET
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
Time
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQA19N60 Rev. C2
5
www.fairchildsemi.com
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQA19N60 Rev. C2
6
www.fairchildsemi.com
FQA19N60 — N-Channel QFET® MOSFET
DUT
FQA19N60 — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003
©2000 Fairchild Semiconductor Corporation
FQA19N60 Rev. C2
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
©2000 Fairchild Semiconductor Corporation
FQA19N60 Rev. C2
8
www.fairchildsemi.com
FQA19N60 — N-Channel QFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
®*
®
AX-CAP®*
FRFET®
BitSiC™
Global Power ResourceSM
PowerTrench®
TinyBoost®
GreenBridge™
PowerXS™
Build it Now™
TinyBuck®
Green FPS™
Programmable Active Droop™
CorePLUS™
TinyCalc™
Green FPS™ e-Series™
QFET®
CorePOWER™
TinyLogic®
QS™
Gmax™
CROSSVOLT™
TINYOPTO™
Quiet Series™
GTO™
CTL™
TinyPower™
RapidConfigure™
IntelliMAX™
Current Transfer Logic™
TinyPWM™
ISOPLANAR™
DEUXPEED®
™
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder
TranSiC™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
and Better™
TriFault Detect™
EfficentMax™
SignalWise™
MegaBuck™
TRUECURRENT®*
SmartMax™
ESBC™
MICROCOUPLER™
μSerDes™
SMART
START™
MicroFET™
®
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
UHC®
STEALTH™
MillerDrive™
Fairchild Semiconductor®
Ultra FRFET™
SuperFET®
MotionMax™
FACT Quiet Series™
SuperSOT™-3
UniFET™
mWSaver®
FACT®
OptoHiT™
SuperSOT™-6
VCX™
FAST®
OPTOLOGIC®
SuperSOT™-8
VisualMax™
FastvCore™
OPTOPLANAR®
SupreMOS®
VoltagePlus™
FETBench™
SyncFET™
XS™
FPS™
Sync-Lock™
仙童 ™
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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