FQA46N15_F109

FQA46N15 / FQA46N15_F109 N-Channel QFET MOSFET 150 V, 50 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • 50 A, 150 V, RDS(on) = 42 mΩ (Max) @VGS = 10 V, ID = 25 A • Low Gate Charge (Typ. 85 nC) • Low Crss (Typ. 100 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D G TO-3PN FQA Series G DS S Absolute Maximum Ratings Symbol Parameter FQA46N15 Unit VDSS Drain-Source Voltage 150 V ID Drain Current - Continuous (TC = 25°C) 50 A IDM Drain Current - Pulsed - Continuous (TC = 100°C) (Note 1) 35.3 A 200 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ IAR Avalanche Current (Note 1) 50 A EAR Repetitive Avalanche Energy (Note 1) 25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25°C 6.0 V/ns 250 W 1.67 W/°C -55 to +175 °C 300 °C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2009 Fairchild Semiconductor Corporation FQA46N15 / FQA46N15_F109 Rev. C0 Typ Max -- 0.6 Unit °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com 1 FQA46N15 / FQA46N15_F109 N-Channel MOSFET March 2013 Device Marking Device Package Reel Size Tape Width Quantity FQA46N15 FQA46N15 TO-3PN -- -- 30 FQA46N15 FQA46N15_F109 TO-3PN -- -- 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 150 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.16 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 150 V, VGS = 0 V -- -- 1 µA VDS = 120 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.033 0.042 Ω -- 36 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 25A gFS Forward Transconductance VDS = 40 V, ID = 25A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2500 3250 pF -- 520 670 pF -- 100 130 pF -- 35 80 ns -- 320 650 ns -- 210 430 ns -- 200 410 ns -- 85 110 nC -- 15 -- nC -- 41 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 75 V, ID = 45.6A, RG = 25 Ω (Note 4, 5) VDS = 120 V, ID = 45.6A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =50A -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 45.6 A, dIF / dt = 100 A/µs (Note 4) -- 130 -- ns -- 0.55 -- µC NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.43mH, IAS =50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 45.6A, di/dt ≤300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation FQA46N15 / FQA46N15_F109 Rev. C0 www.fairchildsemi.com 2 FQA46N15 / FQA46N15_F109 N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 10 ID, Drain Current [A] 10 ID , Drain Current [A] Top : 2 1 10 1 10 175℃ 25℃ -55℃ 0 10 ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2 10 IDR, Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 0.20 0.15 VGS = 10V 0.10 VGS = 20V 0.05 ※ Note : TJ = 25℃ 0.00 1 10 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0 10 0 40 80 120 160 200 240 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 6000 VGS, Gate-Source Voltage [V] Capacitance [pF] Coss 3000 Crss 2000 1.2 1.4 1.6 1.8 2.0 12 Ciss 4000 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 5000 0.8 VSD, Source-Drain voltage [V] ID , Drain Current [A] ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 VDS = 30V 10 VDS = 75V VDS = 120V 8 6 4 2 ※ Note : ID = 45.6 A 0 -1 10 0 10 0 1 10 ©2009 Fairchild Semiconductor Corporation FQA46N15 / FQA46N15_F109 Rev. C0 0 10 20 30 40 50 60 70 80 90 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 22.8 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 150 175 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3 50 10 Operation in This Area is Limited by R DS(on) 40 10 µs 100 µs ID, Drain Current [A] ID, Drain Current [A] 2 10 1 ms 10 ms DC 1 10 0 10 ※ Notes : 30 20 10 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 75 100 125 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve Zθ JC(t), Thermal Response 10 0 D = 0 .5 ※ N o te s : 1 . Z θ J C ( t) = 0 .6 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 10 -1 0 .1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] ©2009 Fairchild Semiconductor Corporation FQA46N15 / FQA46N15_F109 Rev. C0 www.fairchildsemi.com 4 FQA46N15 / FQA46N15_F109 N-Channel MOSFET Typical Performance Characteristics (Continued) FQA46N15 / FQA46N15_F109 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FQA46N15 / FQA46N15_F109 Rev. C0 5 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FQA46N15 / FQA46N15_F109 Rev. C0 6 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FQA46N15 / FQA46N15_F109 Rev. C0 www.fairchildsemi.com 7 *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2009 Fairchild Semiconductor Corporation FQA46N15 / FQA46N15_F109 Rev. C0 9 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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