FQA90N10V2

QFET ® FQA90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating D G TO-3P G DS S FQA Series Absolute Maximum Ratings Symbol Parameter FQA90N10V2 Unit 100 V 105 78 A A 420 A ±30 V (Note 2) 2430 mJ (Note 1) 105 A VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy (Note 1) 33 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 330 2.2 W W/°C -55 to +175 °C 300 °C (Note 1) (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2005 Fairchild Semiconductor Corporation FQA90N10V2 Rev. A 1 Min. Max. Unit -- 0.45 °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com FQA90N10V2 100V N-Channel MOSFET October 2005 Device Marking Device Package Reel Size Tape Width Quantity AV290N10 FQA90N10V2 TO-3P - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 100 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.1 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V VDS = 80V, TC = 150°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 52.5A -- 8.5 10 mΩ gFS Forward Transconductance VDS = 40V, ID = 52.5A -- 72 -- S -- 4730 6150 pF -- 1180 1530 pF -- 300 390 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100V, ID = 90A RG = 25Ω (Note 4, 5) VDS = 80V, ID = 90A VGS = 10V (Note 4, 5) -- 52 114 ns -- 492 994 ns -- 304 618 ns -- 355 720 ns -- 147 191 nC -- 28 -- nC -- 60 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 105 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 420 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 105A -- -- 1.4 V trr Reverse Recovery Time -- 114 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 90A dIF/dt =100A/µs -- 0.54 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.22mH, IAS = 105A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 105A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FQA90N10V2 Rev. A 2 www.fairchildsemi.com FQA90N10V2 100V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 10 2 10 ID, Drain Current [A] ID, Drain Current [A] Top : 175°C 25°C 1 10 -55°C 0 10 * Notes : 1. VDS = 40V * Notes : 1. 250µs Pulse Test 2. TC = 25°C 1 10 10 -1 0 2. 250µs Pulse Test 10 1 10 10 -1 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2 25 IDR, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 30 VGS = 10V 20 15 VGS = 20V 10 5 * Note : TJ = 25°C 0 10 1 10 175°C 25°C 0 10 * Notes : 1. VGS = 0V 2. 250µs Pulse Test -1 0 100 200 300 400 500 10 600 0.2 0.4 0.6 ID, Drain Current [A] 1.4 1.6 12 Ciss = Cgs + Cgd (Cds = shorted) 10000 Coss = Cds + Cgd Crss = Cgd 10 VGS, Gate-Source Voltage [V] 9000 8000 Capacitance [pF] 1.2 Figure 6. Gate Charge Characteristics 11000 Ciss 7000 6000 Coss 5000 4000 * Notes ; 1. VGS = 0 V 3000 Crss 2000 2. f = 1 MHz 1000 VDS = 50V VDS = 80V 8 6 4 2 * Note : ID = 90A 0 10 0 1 10 0 20 40 60 80 100 120 140 160 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQA90N10V2 Rev. A 1.0 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 0 -1 10 0.8 3 www.fairchildsemi.com FQA90N10V2 100V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250µA 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 45 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 TJ, Junction Temperature [°C] Figure 9. Maximum Safe Operating Area 10 80 1 ms ID, Drain Current [A] ID, Drain Current [A] 200 90 100 µs 2 10 ms DC 1 10 * Notes : 1. TC = 25°C 0 150 100 10 µs 10 100 Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 3 10 50 TJ, Junction Temperature [°C] 2. TJ = 175°C 70 60 50 40 30 20 3. Single Pulse 10 -1 10 0 1 10 2 10 0 25 10 VDS, Drain-Source Voltage [V] 50 75 100 125 150 175 TC, Case Temperature [°C] Figure 11. Transient Thermal Response Curve Z θJC (t), Thermal Response 10 0 D = 0 .5 10 * N o te s : 1 . Z θ J C ( t) = 0 .4 5 ° C /W M a x . 0 .2 -1 2 . D u ty F a c to r , D = t 1 /t 2 0 .1 3 . T J M - T C = P D M * Z θ J C ( t) PDM PDM 0 .0 5 10 0 .0 2 0 .0 1 -2 10 t1 t1 t2 t2 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] FQA90N10V2 Rev. A 4 www.fairchildsemi.com FQA90N10V2 100V N-Channel MOSFET Typical Performance Characteristics (Continued) FQA90N10V2 100V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQA90N10V2 Rev. A 5 www.fairchildsemi.com FQA90N10V2 100V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQA90N10V2 Rev. A 6 www.fairchildsemi.com TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FQA90N10V2 Rev. A 7 www.fairchildsemi.com FQA90N10V2 100V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 8 FQA90N10V2 Rev. A www.fairchildsemi.com FQA90N10V2 100V N-Channel MOSFET TRADEMARKS