FQA90N15_F109

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N-Channel QFET® MOSFET Description 150 V, 90 A, 18 mΩ Features These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply. • RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A • Low Gate Charge (Typ. 220 nC) • Low Crss (Typ. 200 pF) • 100% Avalanche Tested • 175°C Maximum Junction Memperature Rating D G G D TO-3PN S Absolute Maximum Ratings Symbol S TC = 25°C unless otherwise noted. Parameter FQA90N15_F109 Unit 150 V 90 63.5 A A 360 A ±25 V VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) 1400 mJ IAR Avalanche Current (Note 1) 90 A (Note 1) EAR Repetitive Avalanche Energy (Note 1) 37.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation 375 2.5 W W/°C -55 to +175 °C 300 °C (TC = 25°C) - Derate Above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQA90N15_F109 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.4 °C/W RθCS Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W ©2000 Semiconductor Components Industries, LLC. September-2017, Rev. 2 1 Publication Order Number: FQA90N15-F109/D FQA90N15-F109 — N-Channel QFET® MOSFET FQA90N15-F109 Part Number FQA90N15-F109 Top Mark FQA90N15 Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Conditions Parameter Min. Typ. Max Units 150 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.15 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 150V, VGS = 0V VDS = 120V, TC = 150°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 25V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25V, VDS = 0V -- -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 45A -- 0.014 0.018 Ω gFS Forward Transconductance VDS = 40V, ID = 45A -- 68 -- S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 6700 8700 pF -- 1400 1800 pF -- 200 260 pF -- 105 220 ns -- 760 1500 ns -- 470 950 ns -- 410 830 ns -- 220 285 nC -- 43 -- nC -- 110 -- nC -- -- 90 A Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 75V, ID = 90A RG = 25Ω (Note 4) VDS = 120V, ID = 90A VGS = 10V (Note 4) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 360 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 90A -- -- 1.5 V trr Reverse Recovery Time 175 -- ns Reverse Recovery Charge VGS = 0V, IS = 90A dIF/dt =100A/μs -- Qrr -- 0.97 -- μC NOTES: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 0.29 mH, IAS = 90 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 90 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FQA90N15-F109 — N-Channel QFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 ID, Drain Current [A] 10 ID , Drain Current [A] Top : 1 10 10 2 10 1 10 0 o 175 C o 25 C o -55 C Notes : 1. VDS = 30V Notes : 1. 250μs Pulse Test o 2. TC = 25 C -1 0 10 2. 250μs Pulse Test 10 1 10 10 -1 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 0.12 0.09 VGS = 10V 0.06 VGS = 20V 0.03 10 2 10 1 10 0 o 175 C 25oC Notes : 1. VGS = 0V o Note : TJ = 25 C 0.00 2. 250μs Pulse Test -1 0 50 100 150 200 250 300 10 ID , Drain Current [A] 0.0 0.4 1.2 0.8 2.0 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 18000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12000 Ciss Coss 9000 2.4 6000 Notes : 1. VGS = 0 V Crss 2. f = 1 MHz 3000 VDS = 30V 10 VGS, Gate-Source Voltage [V] 15000 Capacitance [pF] 1.6 VSD , Source-Drain Voltage [V] VDS = 75V VDS = 120V 8 6 4 2 Note : ID = 90 A 0 -1 10 0 0 10 1 10 0 50 100 150 Q G, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 200 250 FQA90N15-F109 — N-Channel QFET® MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 45 A 0.8 -100 -50 50 0 100 150 0.0 -100 200 -50 0 50 100 150 200 150 175 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 100 Operation in This Area is Limited by R DS(on) 3 10 ID, Drain Current [A] 10 1 ms DC 10 ms 1 10 Notes : o 1. TC = 25 C 0 10 60 40 20 o 2. TJ = 175 C 3. Single Pulse 0 25 -1 10 0 1 10 2 10 10 50 75 100 o Figure 11. Transient Thermal Response Curve D = 0 .5 10 -1 N o te s : 1 . Z ? JC ( t) = 0 .4 0 .2 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 0 .1 3 . T JM - T C = P D M * Z ? JC (t) 0 .0 5 PDM 0 .0 2 10 0 .0 1 -2 10 -5 t1 s in g le e pu se 10 -4 125 T C, Case Temperature [ C] VDS, Drain-Source Voltage [V] ZθJ C(t), Thermal Response [oC/W] ID, Drain Current [A] 80 10 μs 100 μs 2 10 -3 10 -2 10 -1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] www.onsemi.com 4 t2 10 0 10 1 FQA90N15-F109 — N-Channel QFET® MOSFET Typical Performance Characteristics FQA90N15-F109 — N-Channel QFET® MOSFET 50KΩ 50KΩ 200nF 200n F 12V VGS Sam Same e Type as DU DUT T Qg 10V 300nF 300nF VDS VGS Qgs Qgd DUT DUT IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10 10% % td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDS DSS S - VDD L BVDS DSS S IAS ID RG VGS VDD DUT ID (t) VDS (t) VDD tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Ti Tim me + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FQA90N15-F109 — N-Channel QFET® MOSFET DUT ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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