FQA9N90-F109

N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant D G G D TO-3PN S Absolute Maximum Ratings Symbol S TC = 25°C unless otherwise noted. FQA9N90-F109 Parameter Unit VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 8.6 A IDM Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ - Continuous (TC = 100°C) (Note 1) 5.45 A 34.4 A IAR Avalanche Current (Note 1) 8.6 A EAR Repetitive Avalanche Energy (Note 1) 24 mJ (Note 3) 4.0 V/ns 240 W 1.92 W/°C -55 to +150 °C dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds 300 °C - Derate Above 25°C Thermal Characteristics Symbol Parameter FQA9N90-F109 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.52 °C/W RθCS Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W ©2007 Semiconductor Components Industries, LLC. September-2017, Rev. 3 1 Publication Order Number: FQA9N90-F109/D FQA9N90-F109 — N-Channel QFET® MOSFET FQA9N90-F109 Part Number Top Mark Package FQA9N90-F109 FQA9N90 TO-3PN Electrical Characteristics Packing Method Reel Size Tape Width Tube N/A 50 units TC = 25°C unless otherwise noted. Parameter Symbol N/A Quantity Test Conditions Min. Typ. Max. Unit 900 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1.0 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA VDS = 720 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.3 A -- 1.0 1.3 Ω gFS Forward Transconductance VDS = 50 V, ID = 4.3 A -- 9.2 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2100 2700 pF -- 200 260 pF -- 25 33 pF -- 45 100 ns -- 100 210 ns -- 135 280 ns -- 80 170 ns -- 55 72 nC -- 12 -- nC -- 26 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 450 V, ID = 8.6 A, RG = 25 Ω (Note 4) VDS = 720 V, ID = 8.6 A, VGS = 10 V (Note 4) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 34.4 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.6 A -- -- 1.4 V trr Reverse Recovery Time 720 -- ns Reverse Recovery Charge VGS = 0 V, IS = 8.6 A, dIF / dt = 100 A/µs -- Qrr -- 7.6 -- µC NOTES: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 23 mH, IAS = 8.6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 8.6 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQA9N90-F109 — N-Channel QFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 10 o -55 C ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -1 10 -1 -1 0 10 10 1 10 10 2 4 6 10 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.1 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 2.4 VGS = 10V 1.8 VGS = 20V 1.5 1.2 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test ※ Note : TJ = 25℃ 0.9 -1 0 5 10 15 20 25 30 10 0.2 0.4 ID, Drain Current [A] Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitance [pF] Coss 2000 Crss 1000 1.0 1.2 1.4 12 VDS = 180V 10 Ciss 3000 0.8 Figure 6. Gate Charge Characteristics ※ Notes : 1. VGS = 0 V 2. f = 1 MHz VGS, Gate-Source Voltage [V] 4000 0.6 VSD, Source-Drain voltage [V] VDS = 450V VDS = 720V 8 6 4 2 ※ Note : ID = 8.6 A 0 -1 10 0 0 10 1 10 0 10 20 30 40 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 50 60 FQA9N90-F109 — N-Channel QFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.3 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 2 Operation in This Area is Limited by R DS(on) 100 µs 1 10 8 10 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 2 10 4 2 -2 10 6 0 25 3 10 10 75 50 100 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response [oC/W] Figure 11. Transient Thermal Response Curve D = 0 .5 10 ※ N o te s : 1 . Z θ J C (t) = 0 .5 2 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 -1 0 .1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t1, R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ] www.onsemi.com 4 t2 10 0 10 1 125 150 FQA9N90-F109 — N-Channel QFET® MOSFET Typical Performance Characteristics (Continued) FQA9N90-F109 — N-Channel QFET® MOSFET 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FQA9N90-F109 — N-Channel QFET® MOSFET DUT FQA9N90-F109 — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com