FQA9N90C-F109

FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features Description • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low Gate Charge (Typ. 45 nC) • Low Crss . 14 pF) • 100% Avalanche Tested • RoHS compliant D G G D TO-3PN S S Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted. Parameter FQA9N90C_F109 Unit VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 9.0 A IDM Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ - Continuous (TC = 100°C) (Note 1) 5.7 A 36 A IAR Avalanche Current (Note 1) 9.0 A EAR Repetitive Avalanche Energy (Note 1) 28 mJ (Note 3) dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25°C 4.0 V/ns 280 W 2.22 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter FQA9N90C_F109 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.45 °C/W RθCS Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W ©2007 Fairchild Semiconductor Corporation FQA9N90C_F109 Rev C2 1 www.fairchildsemi.com FQA9N90C_F109 — N-Channel QFET® MOSFET April 2014 Part Number FQA9N90C_F109 Top Mark FQA9N90C Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 900 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.99 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA VDS = 720 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A -- 1.12 1.4 Ω gFS Forward Transconductance VDS = 50 V, ID = 4.5 A -- 9.2 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2100 2730 pF -- 175 230 pF -- 14 18 pF -- 50 110 ns -- 120 250 ns -- 100 210 ns -- 75 160 ns -- 45 58 nC -- 13 -- nC -- 18 -- nC 9.0 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 450 V, ID = 11.0A, RG = 25 Ω (Note 4) VDS = 720 V, ID = 11.0A, VGS = 10 V (Note 4) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =9.0 A -- -- 1.4 V trr Reverse Recovery Time 550 -- ns Reverse Recovery Charge VGS = 0 V, IS = 9.0 A, dIF / dt = 100 A/µs -- Qrr -- 6.5 -- µC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 21 mH, IAS = 9 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 9 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2007 Fairchild Semiconductor Corporation FQA9N90C_F109 Rev C2 2 www.fairchildsemi.com FQA9N90C_F109 — N-Channel QFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test -1 -1 0 10 10 1 10 10 2 4 8 6 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 3.0 2.5 VGS = 10V 2.0 VGS = 20V 1.5 1 10 0 10 25℃ 150℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test ※ Note : TJ = 25℃ 1.0 -1 0 5 10 15 20 25 10 30 0.2 0.4 ID, Drain Current [A] Figure 5. Capacitance Characteristics 3500 1.4 VDS = 180V Ciss Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 500 1.2 VDS = 450V 10 2000 1500 1.0 12 VGS, Gate-Source Voltage [V] Capacitance [pF] 2500 0.8 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 0.6 VSD, Source-Drain voltage [V] Crss VDS = 720V 8 6 4 2 ※ Note : ID = 9A 0 -1 10 0 10 0 1 10 ©2007 Fairchild Semiconductor Corporation FQA9N90C_F109 Rev C2 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQA9N90C_F109 — N-Channel QFET® MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 Operation in This Area is Limited by R DS(on) 2 10 µs 8 100 µs 1 10 ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 4 2 -2 10 6 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve ZθJ C(t), Thermal Response [oC/W] 10 0 D = 0 .5 10 ※ N o te s : 1 . Z θ J C (t) = 0 .4 5 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 -1 0 .1 PDM 0 .0 5 t1 0 .0 2 10 0 .0 1 -2 10 -5 t2 s in g le e pu se 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ©2007 Fairchild Semiconductor Corporation FQA9N90C_F109 Rev C2 4 www.fairchildsemi.com FQA9N90C_F109 — N-Channel QFET® MOSFET Typical Performance Characteristics FQA9N90C_F109 — N-Channel QFET® MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DU T VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDS DSS S - VDD L BVDS DSS S IAS ID RG VGS VDD ID (t) VDS (t) VDD DUT tp tp Ti Tim me Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation FQA9N90C_F109 Rev C2 5 www.fairchildsemi.com FQA9N90C_F109 — N-Channel QFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation FQA9N90C_F109 Rev C2 6 www.fairchildsemi.com FQA9N90C_F109 — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 ©2007 Fairchild Semiconductor Corporation FQA9N90C_F109 Rev C2 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2007 Fairchild Semiconductor Corporation FQA9N90C_F109 Rev C2 8 www.fairchildsemi.com FQA9N90C_F109 — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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