FQB30N06LTM

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQB30N06L N-Channel QFET® MOSFET 60 V, 32 A, 35 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • 32 A, 60 V, RDS(on) = 35 mΩ (Max) @VGS = 10 V, ID = 16 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 50 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D D G G D2-PAK S S Absolute Maximum Ratings Symbol VDSS TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current ID FQB30N06LTM 60 Unit V - Continuous (TC = 100°C) 32 A 22.6 A 128 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 32 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 7.9 7.0 3.75 mJ V/ns W 79 0.53 -55 to +175 W W/°C °C 300 °C dv/dt PD (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Pulsed (Note 1) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 20 V 350 mJ Thermal Characteristics Symbol RJC RJA Parameter FQB30N06LTM Thermal Resistance, Junction to Case, Max. 1.90 Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max. ©2000 Fairchild Semiconductor Corporation FQB30N06L Rev. C1 1 Unit oC/W 40 www.fairchildsemi.com FQB30N06L — N-Channel QFET® MOSFET October 2013 Device Marking FQB30N06L Device FQB30N06LTM Electrical Characteristics Symbol Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 16 A VGS = 5 V, ID =16 A --- 0.027 0.035 0.035 0.045 Ω gFS Forward Transconductance VDS = 25 V, ID = 16 A -- 24 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 800 1040 pF -- 270 350 pF -- 50 65 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 16 A, RG = 25 Ω (Note 4) VDS = 48 V, ID = 32 A, VGS = 5 V (Note 4) -- 15 40 ns -- 210 430 ns -- 60 130 ns -- 110 230 ns -- 15 20 nC -- 3.5 -- nC -- 8.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 32 A ISM -- -- 128 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 32 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 60 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 32 A, dIF / dt = 100 A/µs -- 90 -- nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 400µH, IAS = 32A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 32A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially independent of operating temperature ©2000 Fairchild Semiconductor Corporation FQB30N06L Rev. C1 2 www.fairchildsemi.com FQB30N06L — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 2 2 10 Top : ID, Drain Current [A] ID, Drain Current [A] 10 1 10 1 10 175℃ 25℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 0 10 -1 10 ※ Notes : 1. VDS = 25V 2. 250μ s Pulse Test -55℃ 0 0 10 1 10 10 0 VDS, Drain-Source Voltage [V] 2 4 6 8 10 VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 80 2 10 VGS = 5V IDR , Reverse Drain Current [A] R DS(ON) [mΩ ], Drain-Source On-Resistance 60 VGS = 10V 40 20 ※ Note : TJ = 25℃ 0 0 20 40 60 80 100 1 10 0 10 120 ID, Drain Current [A] 0.4 V GS , Gate-Source Voltage [V] Capacitance [pF] 10 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 0 1 10 1.4 1.6 VDS = 30V 6 4 2 ※ Note : ID = 32A 0 5 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQB30N06L Rev. C1 1.2 VDS = 48V 8 0 10 1.0 12 Ciss 0 -1 10 0.8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1500 0.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2000 ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ 175℃ Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQB30N06L — N-Channel QFET® MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.5 1.0 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 0.5 150 ※ Notes : 1. VGS = 10 V 2. ID = 16 A 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 40 Operation in This Area is Limited by R DS(on) 30 2 100 µ s ID , Drain Current [A] ID , Drain Current [A] 10 1 ms 10 ms DC 10 1 ※ Notes : 20 10 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0 25 0 10 -1 10 10 0 1 10 10 2 50 ZJC(t), Thermal Response [oC/W] Figure 9. Maximum Safe Operating Area 10 0 125 150 175 D = 0 .5 ※ N otes : 1 . Z θ J C( t ) = 1 . 9 0 ℃ /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 0 .0 5 -1 0 .0 2 PDM 0 .0 1 10 100 Figure 10. Maximum Drain Current vs Case Temperature 0 .2 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] t1 s in g le p u ls e t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQB30N06L Rev. C1 4 www.fairchildsemi.com FQB30N06L — N-Channel QFET® MOSFET Typical Characteristics FQB30N06L — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2000 Fairchild Semiconductor Corporation FQB30N06L Rev. C1 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2000 Fairchild Semiconductor Corporation FQB30N06L Rev. C1 6 www.fairchildsemi.com FQB30N06L — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB30N06L — N-Channel QFET® MOSFET Mechanical Dimensions TO-263 2L (D2PAK) Figure 16. 2LD,TO263, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 Dimension in Millimeters ©2000 Fairchild Semiconductor Corporation FQB30N06L Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2000 Fairchild Semiconductor Corporation FQB30N06L Rev. C1 8 www.fairchildsemi.com FQB30N06L — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ F-PFS™ AccuPower™ ® FRFET® AX-CAP®* ®* ® SM BitSiC™ Global Power Resource PowerTrench GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ SuperSOT™-6 OptoHiT™ FAST® VCX™ SuperSOT™-8 OPTOLOGIC® FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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