FQB34P10TM

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQB34P10 P-Channel QFET® MOSFET 100 V, -33.5 A, 60 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • -33.5 A, -100 V, RDS(on) = 60 mΩ (Max.) @ VGS = .10 V, ID = -16.75 A • Low Gate Charge (Typ. 85 nC) • Low Crss (Typ. 170 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating S D G G D2-PAK S D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current - Pulsed FQB34P10TM -100 Unit V -33.5 A -23.5 A (Note 1) -134 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 2200 mJ IAR Avalanche Current (Note 1) -33.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 15.5 -6.0 3.75 mJ V/ns W 155 1.03 -55 to +175 W W/°C °C 300 °C dv/dt PD Power Dissipation (TC = 25°C) TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter FQB34P10TM Thermal Resistance, Junction to Case, Max. 0.97 Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2000 Fairchild Semiconductor Corporation FQB34P10 Rev. 1.4 1 Unit oC/W 40 www.fairchildsemi.com FQB34P10 — P-Channel QFET® MOSFET March 2016 Part Number FQB34P10TM Top Mark FQB34P10 Electrical Characteristics Symbol Package D2-PAK Packing Method Tape and Reel Reel Size Tape Width 330 mm 24 mm TC = 25°C unless otherwise noted. Parameter Off Characteristics Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS Quantity 800 units Zero Gate Voltage Drain Current Min. Typ. Max. Unit -100 -- -- V -- -0.1 -- V/°C VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 150°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA -2.0 -- -4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -16.75 A -- 0.049 0.06 Ω gFS Forward Transconductance VDS = -40 V, ID = -16.75 A -- 23 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 2240 2910 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 730 950 pF -- 170 220 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -33.5 A, RG = 25 Ω (Note 4) VDS = -80 V, ID = -33.5 A, VGS = -10 V (Note 4) -- 25 60 ns -- 250 510 ns -- 160 330 ns -- 210 430 ns -- 85 110 nC -- 15 -- nC -- 45 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -33.5 A ISM -- -- -134 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -33.5 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time -- 160 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = -33.5 A, dIF / dt = 100 A/µs -- 0.88 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = mH, IAS = -33.5A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -33.5 A, di/dt ≤ 300 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2000 Fairchild Semiconductor Corporation FQB34P10 Rev. 1.4 2 www.fairchildsemi.com FQB34P10 — P-Channel QFET® MOSFET Package Marking and Ordering Information 2 -ID , Drain Current [A] -ID , Drain Current [A] 10 175℃ 1 10 25℃ 0 10 -55℃ ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test -1 10 2 4 8 6 10 -VGS , Gate-Source Voltage [V] -VDS , Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 RDS(on) [Ω], Drain-Source On-Resistance -IDR , Reverse Drain Current [A] 10 1 10 0 10 25℃ 175℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test -1 10 0.0 0.5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6500 5500 -VGS, Gate-Source Voltage [V] Capacitances [pF] 4000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 3500 3000 Crss 2500 2.5 3.0 VDS = -20V 10 Ciss 4500 2.0 12 Coss 5000 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 1.0 -VSD , Source-Drain Voltage [V] -ID , Drain Current [A] 2000 1500 1000 VDS = -50V VDS = -80V 8 6 4 2 ※ Note : ID = -33.5 A 500 0 -1 10 0 10 0 1 10 VDS, Drain-Source Voltage [V] 20 40 60 80 100 QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQB34P10 Rev. 1.4 0 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQB34P10 — P-Channel QFET® MOSFET Typical Characteristics Characteristics Typical (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -16.75 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 40 Operation in This Area is Limited by R DS(on) 35 2 100 μs -ID, Drain Current [A] -ID, Drain Current [A] 10 1 ms 10 ms 1 10 DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0 1 10 25 20 15 10 5 -1 10 30 0 25 2 10 10 50 -VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 10 75 100 125 150 175 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 0 .2 10 ※ N otes : 1. Z θ JC (t) = 0.97 ℃ /W M ax. 2. D uty Factor, D = t 1 /t 2 3. T JM - T C = P D M * Z θ JC (t) 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u lse D u ra tio n [se c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQB34P10 Rev. 1.4 4 www.fairchildsemi.com FQB34P10 — P-Channel QFET® MOSFET Typical Characteristics FQB34P10 — P-Channel QFET® MOSFET 200nF 200nF 12V VGS Same T Same Ty ype as DUT DUT 50KΩ 50K Ω Qg 300nF 300nF VDS VGS Qgs Qgd DUT DUT IG = const. Charg Ch arge e Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on d( on)) VDD VGS VGS t of offf tr td(of d( offf) tf 10 10% % DUT VGS VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDS DSS S 1 -----------------------------EAS = ---- L IAS2 ------2 BVDS DSS S - VDD L tp ID RG VGS Tim Ti me VDD VDD VDS (t) (t)) ID (t DUT DUT IAS BVDSS tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation FQB34P10 Rev. 1.4 5 www.fairchildsemi.com FQB34P10 — P-Channel QFET® MOSFET + VDS DUT _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Compliment of DUT Comp (N-C (N-Channel hannel)) VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod Gate Pul ulsse W idth D = -------------------------Gate te Pu Ga Pullse Per Period 10 10V V Body Bo dy Diod ode e Reverse Curren entt IRM di//dt di IFM , Bo Body dy Diod ode e For orw ward Curren entt VDS ( DUT ) VSD Body Bo dy Diode Forw For ward Vol olttag age e Drop Drop VDD Body Bo dy Di Diod ode e Recov cove ery dv dv/d /dtt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation FQB34P10 Rev. 1.4 6 www.fairchildsemi.com FQB34P10 — P-Channel QFET® MOSFET Mechanical Dimensions ©2000 Fairchild Semiconductor Corporation FQB34P10 Rev. 1.4 7 www.fairchildsemi.com AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® tm Power Supply WebDesigner™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ FQB34P10 — P-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I77 ©2000 Fairchild Semiconductor Corporation FQB34P10 Rev. 1.4 8 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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