FQB47P06TM-AM002

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. P-Channel QFET® MOSFET -60 V, -47 A, 26 mΩ Features Description This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • -47 A, -60 V, RDS(on) = 26 mΩ (Max.) @ VGS = .10 V, ID = -23.5 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating S D G G D2-PAK S D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB47P06TM-AM002 -60 Unit V - Continuous (TC = 100°C) -47 A -33.2 A -188 A IDM Drain Current VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 820 mJ IAR Avalanche Current (Note 1) -47 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 16 -7.0 3.75 mJ V/ns W 160 1.06 -55 to +175 W W/°C °C 300 °C dv/dt PD (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Pulsed - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter FQB47P06TM-AM002 Thermal Resistance, Junction to Case, Max. 0.94 Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2000 Semiconductor Components Industries, LLC. September-2017,Rev.3 Unit oC/W 40 Publication Order Number: FQB47P06TM-AM002/D FQB47P06 — P-Channel QFET® MOSFET FQB47P06 Part Number Electrical Characteristics Symbol Package D2-PAK Top Mark FQB47P06 FQB47P06TM-AM002 Packing Method Tape and Reel Reel Size Tape Width 330 mm 24 mm TC = 25°C unless otherwise noted. Parameter Off Characteristics Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS Quantity 800 units Zero Gate Voltage Drain Current Min. Typ. Max. Unit -60 -- -- V -- -0.06 -- V/°C VDS = -60 V, VGS = 0 V -- -- -1 µA VDS = -48 V, TC = 150°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -23.5 A -- 0.021 0.026 Ω gFS Forward Transconductance VDS = -30 V, ID = -23.5 A -- 21 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 2800 3600 pF -- 1300 1700 pF -- 320 420 pF ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, ID = -23.5 A, RG = 25 Ω (Note 4) VDS = -48 V, ID = -47 A, VGS = -10 V (Note 4) -- 50 110 -- 450 910 ns -- 100 210 ns -- 195 400 ns -- 84 110 nC -- 18 -- nC -- 44 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -47 A ISM -- -- -188 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -47 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time -- 130 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = -47 A, dIF / dt = 100 A/µs -- 0.55 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 0.43 mH, IAS = -47 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -47 A, di/dt ≤ 300 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQB47P06 — P-Channel QFET® MOSFET Package Marking and Ordering Information -ID, Drain Current [A] VGS 2 10 - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V -ID , Drain Current [A] Top : 2 10 1 10 1 10 o 175 C o 25 C 0 10 o -55 C * Notes : 1. VDS = -30V * Notes : 1. 250µs Pulse Test 0 10 2. 250µs Pulse Test o 2. TC = 25 C -1 0 10 -1 10 1 10 10 2 4 6 8 10 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.10 2 -IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 10 0.08 VGS = - 10V 0.06 VGS = - 20V 0.04 0.02 o * Note : TJ = 25 C 100 200 o 175 C o 25 C * Notes : 1. VGS = 0V 300 2. 250µs Pulse Test 10 400 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 8000 Coss = Cds + Cgd Crss = Cgd 6000 5000 Coss Ciss * Notes : 1. VGS = 0 V 4000 2. f = 1 MHz 3000 2000 Crss 1000 0 -1 10 12 Ciss = Cgs + Cgd (Cds = shorted) 7000 Capacitance [pF] 0 10 -1 0 0 10 1 10 -VGS, Gate-Source Voltage [V] 0.00 1 10 10 VDS = -30V 8 VDS = -48V 6 4 2 * Note : ID = -47 A 0 0 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 70 80 90 FQB47P06 — P-Channel QFET® MOSFET Typical Characteristics (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = -250µA 0.8 -100 -50 0 50 100 2.0 1.5 1.0 * Notes : 1. VGS = -10 V 0.5 2. ID = -23.5 A 150 0.0 -100 200 -50 o 50 100 150 200 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 50 3 10 Operation in This Area is Limited by R DS(on) 40 10 -ID, Drain Current [A] 100 µs 2 1 ms 10 ms DC 1 10 0 10 * Notes : o 1. TC = 25 C 30 20 10 o 2. TJ = 175 C 3. Single Pulse 0 25 -1 10 0 1 10 2 10 10 50 100 125 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 * N o te s : 0 .2 10 1 . Z θ J C ( t) = 0 .9 4 C /W M a x . 3 . T JM - T C = P D M * Z θJC ( t) 0 .0 5 PDM 0 .0 2 0 .0 1 t1 s in g le p u ls e 10 o 2 . D u t y F a c to r , D = t 1 / t 2 0 .1 -1 t2 -2 10 -5 10 -4 150 o Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [ C] -VDS, Drain-Source Voltage [V] ZJC(t), Thermal Response [oC/W] -ID, Drain Current [A] 0 o TJ, Junction Temperature [ C] 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 175 FQB47P06 — P-Channel QFET® MOSFET Typical Characteristics FQB47P06 — P-Channel QFET® MOSFET 200nF 200nF 12V VGS Same Same T Ty ype as DUT DUT 50KΩ 50K Ω Qg 300nF 300nF VDS VGS Qgs Qgd DUT DUT IG = const. Charg Ch arge e Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on VDD VGS td(on d( on)) VGS t of offf tr td(of d( offf) tf 10 10% % DUT VGS VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDS DSS S 1 -----------------------------EAS = ---- L IAS2 ------2 BVDS DSS S - VDD L tp ID RG VGS VDD DUT DUT tp Tim Ti me VDD VDS (t) (t)) ID (t IAS BVDSS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 FQB47P06 — P-Channel QFET® MOSFET + VDS DUT _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Compliment of DUT Comp (N-C (N-Channel hannel)) VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod se W idth Gate Pul uls D = -------------------------Gate te Pu Ga Pullse Per Period 10 10V V Body Bo dy Diod ode e Reverse Curren entt IRM di//dt di IFM , Bo Body dy Diod ode e For orw ward Curren entt VDS ( DUT ) VSD Body Bo dy Diode For Forw ward Vol olttag age e Drop Drop VDD Body Bo dy Di Diod ode e Recov cove ery dv dv/d /dtt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FQB47P06 — P-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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