FQB7N60TM

N-Channel QFET® MOSFET 600 V, 7.4 A, 1.0 Ω Features Description • 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 3.7 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ. 16 pF) • 100% Avalanche Tested D D G S G DS D2-PAK Absolute Maximum Ratings T Symbol VDSS I2-PAK G S o C = 25 C unless otherwise noted. FQB7N60TM FQB7N60TM-WS FQI7N60TU Parameter Unit ID Drain-Source Voltage - Continuous (TC = 25°C) Drain Current IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 7.4 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 14.2 4.5 3.13 mJ V/ns W 142 1.14 -55 to +150 W W/°C °C 300 °C - Continuous (TC = 100°C) dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8
from Case for 5 Seconds 600 V 7.4 A 4.7 A 29.6 A ±
30 V 580 mJ Thermal Characteristics Symbol RJC RJA FQB7N60TM FQB7N60TM-WS FQI7N60TU Parameter 0.88 Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2000 Semiconductor Components Industries, LLC. October-2017,Rev. 3 Unit 62.5 oC/W 40 Publication Order Number: FQI7N60/D FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET FQB7N60 / FQI7N60 Part Number FQB7N60TM Top Mark FQB7N60 Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units FQB7N60TM-WS FQI7N60TU FQB7N60S FQI7N60 D2-PAK I2-PAK Tape and Reel Tube 330 mm N/A 24 mm N/A 800 units 50 units Electrical Characteristics T Symbol o C = 25 C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 600 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.67 VDS = 600 V, VGS = 0 V -- -- 10 µA VDS = 480 V, TC = 125°C -- -- 100 µA IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.7 A -- 0.8 1.0 Ω gFS Forward Transconductance VDS = 50 V, ID = 3.7 A -- 6.4 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1100 1430 pF -- 135 175 pF -- 16 21 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 7.4 A, RG = 25 Ω (Note 4) VDS = 480 V, ID = 7.4 A, VGS = 10 V (Note 4) -- 30 70 ns -- 80 170 ns -- 65 140 ns -- 60 130 ns -- 29 38 nC -- 7 -- nC -- 14.5 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.4 ISM -- -- 29.6 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.4 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 320 -- ns Qrr Reverse Recovery Charge -- 2.4 -- µC VGS = 0 V, IS = 7.4 A, dIF / dt = 100 A/µs
 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 19.5 mH, IAS = 7.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ 7.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 0 10 150
25

Notes : 1. 250s Pulse Test 2. TC = 25 -1 10
Notes : 1. VDS = 50V 2. 250s Pulse Test -55
-1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.5 VGS = 10V 1 10 IDR, Reverse Drain Current [A] VGS = 20V 1.5 1.0 0 10 0.5
Note : TJ = 25 0.0 0 5 10 15 20 25 150
0.2
Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 400 0 1.2 VDS = 300V VDS = 480V 8 6 4 2
Note : ID = 7.4A 0 10 1.0 VDS = 120V V GS , Gate-Source Voltage [V] Coss 800 0 -1 10 0.8 12 10 Ciss 1200 0.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1600 0.4 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2000
Notes : 1. VGS = 0V 2. 250s Pulse Test 25
-1 10 ID, Drain Current [A] Capacitance [pF] R DS(ON) [
], Drain-Source On-Resistance 2.0 0 5 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 10 15 20 25 30 35 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET  !    1.2 3.0 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0
Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0
Notes : 1. VGS = 10 V 2. ID = 3.7 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 8 2 10 Operation in This Area is Limited by R DS(on) ID , Drain Current [A] 1 10 1 ms 10 ms DC 0 10
Notes : 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 2 10 0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area 10 75 100 125 TC, Case Temperature [
] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response [oC/W] ID , Drain Current [A] 6 100 µ s Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5
N otes : 1 . Z
J C( t ) = 0 . 8 8  /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z
J C( t ) 0 .2 10 -1 0 .1 0 .0 5 PDM 0 .0 2 0 .0 1 t1 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 t1, Rectangular Pulse Duration [sec] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET  !   



   FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Time + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET DUT FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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