Is Now Part of
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FQB7P20
P-Channel QFET® MOSFET
-200 V, -7.3 A, 690 mΩ
Description
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• -7.3 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V,
ID = -3.65 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
• RoHS Compliant
S
D
G
G
D2-PAK
S
D
Absolute Maximum Ratings
+
7
TC = 25°C unless otherwise noted.
FQB7P20TM
)**
+
3-)584
+
& '
(
9 .
(
)/ )
(
3-1**84
7
+
: +
±'*
+
;
(!
;
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<
7
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-)584>
/*
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<
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55@15*
?
?$8
8
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8
!$
3-)584
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
Thermal Characteristics
Symbol
RJC
RJA
Parameter
FQB7P20TM
Thermal Resistance, Junction to Case, Max.
Unit
1.39
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max.
62.5
oC/W
40
* When mounted on the minimum pad size recommended (PCB Mount)
Semiconductor Components Industries, LLC, 2016
December, 2016, Rev. 1.4
Publication Order Number:
FQB7P20/D
1
FQB7P20 — P-Channel QFET® MOSFET
www.onsemi.com
Part Number
Top Mark
FQB7P20
)4%370
Electrical Characteristics
Package
D2-PAK
Packing Method
Tape and Reel
Reel Size
Tape Width
330 mm
24 mm
Quantity
800 units
TC = 25°C unless otherwise noted.
Max.
)**
+
C+
C =
+
+-*+7-)5*µ(
∆C+
C =
+
7-)5*µ(,
)58
* 1
+$8
+-)**++-*+
1
µ(
+-1.*+-1)58
µ(
$∆
7
D: +
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7
: C2 =
+-'*++-*+
1**
(
7
: C2 =
,!
+-'*++-*+
1**
(
+
: +
+-+7-)5*µ(
' *
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+
,
,
+-1*+7-' .5(
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Ω
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99
7
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:
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(Note 4)
+-1.*+7-&'(
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e 4)
11*
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F
,!, !
+-*+7-& '(
7$-1**($µ
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 16 mH, IAS = -7.3 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ -7.3 A, di/dt ≤ 300 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
www.onsemi.com
2
1B*
1 *&
µ
FQB7P20 — P-Channel QFET® MOSFET
Package Marking and Ordering Information
'
% # &
Ω
!
"
#$
!"
www.onsemi.com
3
FQB7P20 — P-Channel QFET® MOSFET
Typical Characteristics
(Continued)
!
"
#$
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% &
- . !
#$
/
#$
./$0101 0
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020304(5
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, -
ZJC(t), Thermal Response [oC/W]
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'' # #$
www.onsemi.com
4
FQB7P20 — P-Channel QFET® MOSFET
Typical Characteristics
200nF
12V
FQB7P20 — P-Channel QFET® MOSFET
VGS
Same Type
as DUT
50KΩ
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
5
Time
FQB7P20 — P-Channel QFET® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.onsemi.com
6
10.67
9.65
10.67
-A1.68
1.00
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
3
1
1.78
1.14
0.99
0.51
(2.12)
2
0.25 MAX
PLASTIC BODY
STUB
3.80
3
1
1.05
0.25
M
5.08
B AM
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
5.08
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
6.22 MIN
4
-B-
4.83
4.06
1.65
1.14
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
GAGE PLANE
0.74
0.33
0.25
2.79
1.78
0.25 MAX
(5.38)
SEATING
PLANE
SCALE: 2X
0.10
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
B
F) FILENAME: TO263A02REV8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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