FQD12P10TM-F085

FQD12P10TM_F085 tm 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. • • • • • • • • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101 RoHS Compliant D D G G S D-PAK Absolute Maximum Ratings Symbol VDSS ID S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) Ratings -100 Units V -9.4 A -6.0 A -37.6 A ± 30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 370 IAR Avalanche Current (Note 1) -9.4 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 5.0 -6.0 2.5 mJ V/ns W 50 0.4 -55 to +150 W W/°C °C 300 °C dv/dt PD (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8! from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 2.5 Units °C/W RθJA RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FQD12P10TM_F085 Rev. A 1 www.fairchildsemi.com FQD12P10TM_F085 P-Channel MOSFET February 2010 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -100 -- -- V -- -0.1 -- V/°C VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -4.7 A -- 0.24 0.29 Ω gFS Forward Transconductance VDS = -40 V, ID = -4.7 A -- 6.3 -- S -- 620 800 pF -- 220 290 pF -- 65 85 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -11.5 A, RG = 25 Ω (Note 4, 5) VDS = -80 V, ID = -11.5 A, VGS = -10 V (Note 4, 5) -- 15 40 ns -- 160 330 ns -- 35 80 ns -- 60 130 ns -- 21 27 nC -- 4.6 -- nC -- 11.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A ISM -- -- -37.6 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -9.4 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -11.5 A, dIF / dt = 100 A/µs (Note 4) -- 110 -- ns -- 0.47 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6.3mH, IAS = -9.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD " -11.5A, di/dt " 300A/µs, VDD " BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width " 300µs, Duty cycle " 2% 5. Essentially independent of operating temperature FQD12P10TM_F085 Rev. A 2 www.fairchildsemi.com FQD12P10TM_F085 P-Channel MOSFET Electrical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V Top : -I D, Drain Current [A] 0 10 1 10 -I D , Drain Current [A] 1 10 -1 10 150! 0 25! 10 -55! " Notes : 1. VDS = -40V 2. 250# s Pulse Test " Notes : 1. 250# s Pulse Test 2. TC = 25! -2 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.8 1 0.6 10 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance VGS = - 10V VGS = - 20V 0.4 0.2 " Note : TJ = 25! 0.0 0 10 150! 25! " Notes : 1. VGS = 0V 2. 250# s Pulse Test -1 0 10 20 30 10 40 0.0 0.5 -ID , Drain Current [A] 1.0 1.5 2.0 2.5 3.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 1600 1400 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss VDS = -50V -V GS , Gate-Source Voltage [V] 1000 " Notes : 1. VGS = 0 V 2. f = 1 MHz 800 Crss 600 400 200 0 -1 10 VDS = -80V 8 6 4 2 " Note : ID = -11.5 A 0 0 10 0 1 10 4 8 12 16 20 24 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics FQD12P10TM_F085 Rev. A VDS = -20V 10 Ciss 1200 Capacitance [pF] FQD12P10TM_F085 P-Channel MOSFET Typical Characteristics Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 " Notes : 1. VGS = 0 V 2. ID = -250 # A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 " Notes : 1. VGS = -10 V 2. ID = -4.7 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 Operation in This Area is Limited by R DS(on) 2 10 FQD12P10TM_F085 P-Channel MOSFET Typical Characteristics 8 -I D, Drain Current [A] -I D, Drain Current [A] 100 µs 1 ms 1 10 10 ms DC 0 10 " Notes : 6 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 (t), T h e rm a l R e s p o n s e Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 " N o te s : 1 . Z $ J C (t) = 2 .5 ! /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z $ J C (t) 0 .2 0 .1 0 .0 5 10 -1 PDM 0 .0 2 0 .0 1 Z $ JC 75 TC, Case Temperature [!] -VDS, Drain-Source Voltage [V] 10 -5 t1 s in g le p u ls e 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve FQD12P10TM_F085 Rev. A 4 www.fairchildsemi.com FQD12P10TM_F085 P-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K% Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on td(on) VDD VGS VGS RG t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V VDS (t) ID (t) IAS BVDSS tp FQD12P10TM_F085 Rev. A VDD Time 5 www.fairchildsemi.com + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period FQD12P10TM_F085 P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt FQD12P10TM_F085 Rev. A 6 www.fairchildsemi.com D-PAK MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 2.30 ±0.10 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 FQD12P10TM_F085 P-Channel MOSFET Package Dimensions 0.76 ±0.10 Dimensions in Millimeters FQD12P10TM_F085 Rev. A 7 www.fairchildsemi.com tm tm FQD12P10TM_F085 P-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 FQD12P10TM_F085 Rev. A 8 www.fairchildsemi.com