FQD3N50CTF

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQU3N50C N-Channel QFET® MOSFET 500 V, 2.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 2.5 A, 500 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 1.25 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 8.5 pF) • 100% Avalanche Tested D G D G S I-PAK S Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted. Parameter FQU3N50CTU Unit VDSS Drain-Source Voltage 500 V ID Drain Current 2.5 A 1.5 A IDM Drain Current 10 A - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ IAR Avalanche Current (Note 1) 2.5 A EAR Repetitive Avalanche Energy (Note 1) 3.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 35 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering, 1/8" from case for 5 seconds - Derate above 25°C 0.28 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter FQU3N50CTU Unit RθJC Thermal Resistance, Junction-to-Case, Max. 3.5 °C/W RθJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 °C/W RθJA Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 °C/W ©2008 Fairchild Semiconductor Corporation FQU3N50C Rev C1 1 www.fairchildsemi.com FQU3N50C — N-Channel QFET® MOSFET December 2013 Part Number FQU3N50CTU Top Mark FQU3N50C Electrical Characteristics Symbol Package IPAK Packing Method Tube Reel Size N/A Tape Width N/A Quantity 75 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.25 A -- 2.1 2.5 Ω gFS Forward Transconductance VDS = 40 V, ID = 1.25 A -- 1.5 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 280 365 pF -- 50 65 pF -- 8.5 11 pF -- 10 30 ns -- 25 60 ns -- 35 80 ns -- 25 60 ns -- 10 13 nC -- 1.5 -- nC -- 5.5 -- nC -- -- 2.5 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 250 V, ID = 2.5A, RG = 25 Ω (Note 4) VDS = 400 V, ID = 2.5A, VGS = 10 V (Note 4) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 10 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A -- -- 1.4 V trr Reverse Recovery Time 170 -- ns Reverse Recovery Charge VGS = 0 V, IS = 3 A, dIF / dt = 100 A/µs -- Qrr -- 0.7 -- µC NOTES: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 58 mH, IAS = 2.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 2.5 A, di/dt ≤200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2008 Fairchild Semiconductor Corporation FQU3N50C Rev C1 2 www.fairchildsemi.com FQU3N50C — N-Channel QFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] ID , Drain Current [A] Top : 1 10 0 10 -1 0 10 -55°C 2. 250µs Pulse Test -1 10 2 1 10 25°C 0 10 Note 1. VDS = 40V Notes : 1. 250µs Pulse Test 2. TC = 25°C -1 10 150°C 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 8.0 7.0 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 7.5 6.5 VGS = 10V 6.0 5.5 5.0 4.5 4.0 VGS = 20V 3.5 3.0 2.5 0 10 150°C 25°C Notes : 1. VGS = 0V Note : TJ = 25°C 2.0 2. 250µs Pulse Test -1 1.5 0 2 4 6 8 10 10 0.2 ID, Drain Current [A] 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VGS, Gate-Source Voltage [V] Capacitances [pF] 600 Ciss 400 Coss 200 Note ; 1. VGS = 0 V Crss 2. f = 1 MHz VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 Note : ID = 3A 0 -1 10 0 0 10 0 1 10 ©2008 Fairchild Semiconductor Corporation FQU3N50C Rev C1 5 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQU3N50C — N-Channel QFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250µA 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 1.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 TJ, Junction Temperature [°C] Figure 9. Maximum Safe Operating Area 100 150 200 Figure 10. Maximum Drain Current vs. Case Temperature 3 2 10 Operation in This Area is Limited by R DS(on) 1 10 ID, Drain Current [A] ID, Drain Current [A] 50 TJ, Junction Temperature [°C] 100 µs 1 ms 10 ms 100 ms DC 0 10 Notes : 1. TC = 25°C -1 10 2 1 2. TJ = 150°C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 VDS, Drain-Source Voltage [V] 75 100 125 150 TC, Case Temperature [°C] ZθJC(t), Thermal Response [oC/W] Figure 11. Transient Thermal Response Curve D = 0 .5 10 0 0 .2 N o te s : 1 . Z θ JC (t) = 3 .5 ° C /W M ax. 0 .1 2 . D uty F ac to r, D = t 1 /t 2 0 .0 5 10 3 . T JM - T C = P D M * Z θ JC (t) 0 .0 2 0 .0 1 -1 PDM t1 sin gle p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ] ©2008 Fairchild Semiconductor Corporation FQU3N50C Rev C1 4 www.fairchildsemi.com FQU3N50C — N-Channel QFET® MOSFET Typical Performance Characteristics FQU3N50C — N-Channel QFET® MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDS DSS S - VDD L BVDS DSS S IAS ID RG VGS VDD ID (t) VDS (t) VDD DUT tp tp Ti Tim me Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FQU3N50C Rev C1 5 www.fairchildsemi.com FQU3N50C — N-Channel QFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FQU3N50C Rev C1 6 www.fairchildsemi.com FQU3N50C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO-251 (I-PAK), Molded, 3-Lead, Option AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT251-003 ©2008 Fairchild Semiconductor Corporation FQU3N50C Rev C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation FQU3N50C Rev C1 8 www.fairchildsemi.com FQU3N50C — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ F-PFS™ AccuPower™ ® FRFET® AX-CAP®* ®* ® SM BitSiC™ Global Power Resource PowerTrench GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ SuperSOT™-6 OptoHiT™ FAST® VCX™ SuperSOT™-8 OPTOLOGIC® FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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