FQD4P25TM-WS

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Other names and brands may be claimed as the property of others. P-Channel QFET® MOSFET -250 V, -3.1 A, 2.1 Ω Features • -3.1 A, -250 V, RDS(on) = 2.1 Ω (Max.) @ VGS = 10 V, ID = -1.55 A Description This P-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 10 nC) produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This • Low Crss (Typ. 10.3 pF) advanced MOSFET technology has been especially • 100% Avalanche Tested tailored to reduce on-state resistance, and to provide • Improved dv/dt Capability superior switching performance and high avalanche energy strength. These devices are suitable for switched • RoHS Compliant mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S D G G S D-PAK D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD4P25TM-WS -250 - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) A V mJ Avalanche Current (Note 1) -3.1 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 4.5 -5.5 2.5 mJ V/ns W 45 0.36 -55 to +150 W W/°C °C 300 °C IAR EAR (Note 3) Power Dissipation (TC = 25°C) TL -12.4 280 Single Pulsed Avalanche Energy TJ, TSTG A A ± 30 Gate-Source Voltage EAS PD -3.1 -1.96 (Note 2) VGSS dv/dt Unit V - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter FQD4P25TM-WS 2.78 Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2011 Semiconductor Components Industries, LLC. August-2017, Rev. 3 Unit 110 oC/W 50 Publication Order Number: FQD4P25TM-WS/D FQD4P25TM-WS — P-Channel QFET® MOSFET FQD4P25TM-WS Part Number Electrical Characteristics Symbol Package DPAK Top Mark FQD4P25S FQD4P25TM-WS Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units TC = 25°C unless otherwise noted. Test Conditions Parameter Min. Typ. Max. Unit -250 -- -- V -- -0.21 -- V/°C µA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -250 V, VGS = 0 V -- -- -1 VDS = -200 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.55 A -- 1.63 2.1 Ω gFS Forward Transconductance VDS = -40 V, ID = -1.55 A -- 2.0 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 325 420 pF -- 65 85 pF -- 10 13 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -125 V, ID = -4.0 A, RG = 25 Ω (Note 4) VDS = -200 V, ID = -4.0 A, VGS = -10 V (Note 4) -- 9.5 30 ns -- 60 130 ns -- 14 40 ns -- 27 65 ns -- 10.3 14 nC -- 2.7 -- nC -- 5.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -3.1 A ISM -- -- -12.4 A -- -- -5.0 V VGS = 0 V, IS = -4.0 A, dIF / dt = 100 A/µs -- 140 -- ns -- 0.64 -- µC VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -3.1 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes: 1. Repetitive rating : pulse-width limited by maximum Hunction temperature. 2. L = 46.6 mH, IAS = -3.1 A, VDD = -50V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -4.0 A, diVdt≤ 300 AVµs, VDD ≤ BVDSS, starting TJ = 25°C . 4. Essentially independent of operating temperature. www.onsemi.com 2 FQD4P25TM-WS — P-Channel QFET® MOSFET Package Marking and Ordering Information 1 10 VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V 1 10 0 10 -ID , Drain Current [A] -ID, Drain Current [A] Top : -1 10 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ 150℃ 25℃ ※ Notes : 1. VDS = -50V 2. 250µ s Pulse Test -55℃ -2 10 0 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 8 1 6 -IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 10 VGS = - 10V VGS = - 20V 4 2 ※ Note : TJ = 25℃ 0 150℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 25℃ -1 0 3 6 9 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 700 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 500 Ciss 400 Coss 300 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 200 Crss 100 0 -1 10 VDS = -50V -VGS, Gate-Source Voltage [V] 600 Capacitance [pF] 0 10 10 VDS = -125V VDS = -200V 8 6 4 2 ※ Note : ID = -4.0 A 0 0 10 0 1 10 2 4 6 8 10 12 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics www.onsemi.com 3 Figure 6. Gate Charge Characteristics FQD4P25TM-WS — P-Channel QFET® MOSFET Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 ※ Note : 1. VGS = 0 V 2. ID = -250 µA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -2.0 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.5 Operation in This Area is Limited by R DS(on) 3.0 1 -ID, Drain Current [A] 100 µs 1 ms 10 ms DC 0 10 ※ Notes : 2.5 2.0 1.5 1.0 o 1. TC = 25 C 0.5 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0.0 25 2 10 10 50 75 100 125 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] -ID, Drain Current [A] 10 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 ※ N o te s : 1 . Z θ J C ( t) = 2 . 7 8 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 -1 0 .0 1 10 -5 t1 s in g le p u ls e 10 -4 10 t2 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQD4P25TM-WS — P-Channel QFET® MOSFET Typical Characteristics FQD4P25TM-WS — P-Channel QFET® MOSFET 200nF 200nF 12V VGS Same Same T Ty ype as DUT DUT 50KΩ 50K Ω Qg 300nF 300nF VDS VGS Qgs Qgd DUT DUT IG = const. Charg Ch arge e Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on d( on)) VDD VGS VGS t of offf tr td(of d( offf) tf 10 10% % DUT VGS VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDS DSS S 1 -----------------------------EAS = ---- L IAS2 ------2 BVDS DSS S - VDD L tp ID RG VGS tp VDD VDD DUT DUT Tim Ti me VDS (t) (t)) ID (t IAS BVDSS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 VDS DUT _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Compliment of DUT Comp (N-C (N-Channel hannel)) VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod Gate Pul ulsse W idth D = -------------------------te Pu Gate Ga Pullse Pe Perriod 10 10V V Body Bo dy Diod ode e Reverse Curren entt IRM di//dt di IFM , Bo Body dy Diod ode e For orw ward Curren entt VDS ( DUT ) VSD Body Bo dy Diode For Forw ward Vol olttag age e Drop Drop VDD Body Bo dy Di Diod ode e Recov cove ery dv dv/d /dtt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FQD4P25TM-WS — P-Channel QFET® MOSFET + FQD4P25TM-WS — P-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor's representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 FQD4P25TM-WS — P-Channel QFET® MOSFET ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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