N-Channel QFET® MOSFET
600 V, 2.8 A, 2.5 Ω
Features
Description
• 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 1.4 A
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
• Low Gate Charge ( Typ. 15 nC)
• Low Crss (Typ. 6.5 pF)
• 100% Avalanche Tested
• RoHS compliant
D
D
G
S
I-PAK
D-PAK
G
D
G
S
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD5N60CTM / FQU5N60CTU
600
Unit
V
2.8
A
- Continuous (TC = 100°C)
1.8
A
11.2
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
210
mJ
IAR
Avalanche Current
(Note 1)
2.8
A
EAR
(Note 1)
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
4.9
4.5
2.5
mJ
V/ns
W
PD
Power Dissipation (TC = 25°C)
49
0.39
-55 to +150
W
W/°C
°C
300
°C
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction-to-Ambient (* 1 in2 pad of 2 oz copper), Max.
©2003 Semiconductor Components Industries, LLC.
October-2017,Rev.3
FQD5N60CTM /
FQU5N60CTU
2.56
110
Unit
°C/W
50
Publication Order Number:
FQU5N60C/D
FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET
FQD5N60C / FQU5N60C
Device Marking
FQD5N60C
Device
FQD5N60CTM
Package
D-PAK
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
FQU5N60C
FQU5N60CTU
I-PAK
Tube
N/A
70 units
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
600
--
--
V
--
0.6
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
VDS = 600 V, VGS = 0 V
--
--
1
μA
VDS = 480 V, TC = 125°C
--
--
10
μA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.4 A
--
2.0
2.5
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 1.4 A
--
4.7
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
515
670
pF
--
55
72
pF
--
6.5
8.5
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 4.5A,
RG = 25 Ω
(Note 4)
VDS = 480 V, ID = 4.5A,
VGS = 10 V
(Note 4)
--
10
30
ns
--
42
90
ns
--
38
85
ns
--
46
100
ns
--
15
19
nC
--
2.5
--
nC
--
6.6
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.8
A
ISM
--
--
11.2
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 2.8 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
300
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/μs
--
2.2
--
μC
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
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2
FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
0
10
1
10
ID, Drain Current [A]
1
10
-1
10
o
150 C
o
-55 C
o
25 C
0
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
10
-2
10
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-1
-1
0
10
2
1
10
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
6
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1
10
5
VGS = 10V
4
3
2
VGS = 20V
1
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
25℃
※ Note : TJ = 25℃
0
-1
0
2
4
6
8
10
10
0.2
0.4
0.6
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
1.2
1.4
12
Ciss
600
Coss
400
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
VGS, Gate-Source Voltage [V]
800
Capacitance [pF]
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
0.8
VSD, Source-Drain voltage [V]
VDS = 120V
10
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 4.5A
0
-1
10
0
0
10
1
10
0
4
12
16
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
8
Figure 6. Gate Charge Characteristics
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3
FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 1.4 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
3.0
Operation in This Area
is Limited by R DS(on)
2.5
1
10 μs
100 μs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
10 ms
100 ms
DC
0
10
-1
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
10
1
2
10
1.5
1.0
0.5
-2
10
2.0
0.0
25
3
10
10
50
75
100
125
TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
ZθJC(t), Thermal Response [oC/W]
Zθ JC(t), Thermal Response
VDS, Drain-Source Voltage [V]
10
D = 0 .5
0
※ N o te s :
1 . Z θ J C (t) = 2 .5 6 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .2
0 .1
PDM
0 .0 5
10
-1
t1
0 .0 2
t2
0 .0 1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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4
10
1
150
FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET
Typical Characteristics
FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
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5
Time
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
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6
VDD
FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET
Mechanical Dimensions
TO-252 3L (DPAK)
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeter
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7
FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET
Mechanical Dimensions
TO-251 3L (IPAK)
Figure 17. TO251 (IPAK) Molded 3 Lead
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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