FQD7N10LTF

FQD7N10L N-Channel QFET® MOSFET 100 V, 5.8 A, 350 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • 5.8 A, 100 V, RDS(on) = 350 m (Max.) @ VGS = 10 V, ID = 2.9 A • Low Gate Charge (Typ. 4.6 nC) • Low Crss (Typ. 12 pF) • 100% Avalanche Tested D D G S G D-PAK S Absolute Maximum Ratings T Symbol VDSS ID o C = 25 C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD7N10LTM 100 Unit V 5.8 A 3.67 A - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * dv/dt PD - Pulsed 23.2 A  20 V (Note 2) 50 mJ (Note 1) 5.8 A (Note 1) 2.5 6.0 2.5 mJ V/ns W 25 0.2 -55 to +150 W W/°C °C 300 °C (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter FQD7N10LTM Thermal Resistance, Junction to Case, Max. 5.0 Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. ©2000 Fairchild Semiconductor Corporation FQD7N10L Rev. C1 1 Unit oC/W 50 www.fairchildsemi.com FQD7N10L — N-Channel QFET® MOSFET November 2013 Part Number FQD7N10LTM Electrical Characteristics T Symbol Package D-PAK Top Mark FQD7N10L Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units o C = 25 C unless otherwise noted. Parameter Test Conditions  Off Characteristics Min. Typ. Max. Unit 100 -- -- V BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25°C -- 0.1 -- V/°C VDS = 100 V, VGS = 0 V -- -- 1 A IDSS Zero Gate Voltage Drain Current -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.9 A VGS = 5 V, ID = 2.9 A -- 0.275 0.300 0.35 0.38  gFS Forward Transconductance VDS = 30 V, ID = 2.9 A -- 4.6 -- S Ciss Input Capacitance 220 290 pF Output Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- Coss -- 55 72 pF Crss Reverse Transfer Capacitance -- 12 15 pF td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time  On Characteristics  Dynamic Characteristics VDS = 80 V, TC = 125°C  Switching Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 50 V, ID = 7.3 A, RG = 25  (Note 4) VDS = 80 V, ID = 7.3 A, VGS = 5 V (Note 4) -- 9 30 ns -- 100 210 ns -- 17 45 ns -- 50 110 ns -- 4.6 6.0 nC -- 1.0 -- nC -- 2.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A ISM -- -- 23.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.8 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 70 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 7.3 A, dIF / dt = 100 A/s -- 140 -- nC
 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 2.23 mH, IAS = 5.8 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ 7.3 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. ©2000 Fairchild Semiconductor Corporation FQD7N10L Rev. C1 2 www.fairchildsemi.com FQD7N10L — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : ID, Drain Current [A] 10 1 10 ID , Drain Current [A] 1 0 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. VDS = 30V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 -1 -1 0 10 10 1 10 10 0 2 6 4 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS = 5V 0.9 VGS = 10V 0.6 0.3 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0.0 -1 0 5 10 15 10 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 600 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 500 Capacitance [pF] 1 10 VGS, Gate-Source Voltage [V] RDS(ON) [Ω ], Drain-Source On-Resistance 1.2 IDR , Reverse Drain Current [A] 1.5 400 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss 300 Coss 200 Crss 100 10 VDS = 50V 8 VDS = 80V 6 4 2 ※ Note : ID = 7.3 A 0 -1 10 0 10 0 1 10 Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQD7N10L Rev. C1 0 1 2 3 4 5 6 7 8 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQD7N10L — N-Channel QFET® MOSFET  !    3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 5 V 2. ID = 2.9 A 0.5 0.0 -100 200 -50 o 50 100 150 200 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2 6 10 Operation in This Area is Limited by R DS(on) 5 100 s 1 10 ID, Drain Current [A] ID, Drain Current [A] 0 o TJ, Junction Temperature [ C] 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C 4 3 2 1 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 ※ N o te s : 1 . Z θ J C ( t ) = 5 .0 ℃ /W M a x . 2 . D u t y F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 0 .1 0 .0 5 PDM 0 .0 2 10 0 .0 1 -1 10 t1 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t1 , R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQD7N10L Rev. C1 4 www.fairchildsemi.com FQD7N10L — N-Channel QFET® MOSFET  !   



   FQD7N10L — N-Channel QFET® MOSFET 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation FQD7N10L Rev. C1 5 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation FQD7N10L Rev. C1 6 www.fairchildsemi.com FQD7N10L — N-Channel QFET® MOSFET DUT FQD7N10L — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 ©2000 Fairchild Semiconductor Corporation FQD7N10L Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2000 Fairchild Semiconductor Corporation FQD7N10L Rev. C1 8 www.fairchildsemi.com FQD7N10L — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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