FQI11P06TU

FQB11P06 / FQI11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -11.4 A, -60 V, RDS(on) = 175 mΩ (Max) @VGS = -10 V, ID = -5.7 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 45 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating S ! D G! ● ● ▶ ▲ G S D2-PAK FQB Series Absolute Maximum Ratings Symbol VDSS ID I2-PAK G D S ● FQI Series ! D TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB11P06 / FQI11P06 -60 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) Unit V -11.4 A -8.05 A -45.6 A ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ IAR Avalanche Current (Note 1) -11.4 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 5.3 -7.0 3.13 mJ V/ns W 53 0.35 -55 to +175 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Typ -- Max 2.85 Unit °C/W Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQB11P06 / FQI11P06 Rev. C0 www.fairchildsemi.com FQB11P06 / FQI11P06 P-Channel MOSFET March 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit -60 -- -- V -- -0.07 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = -60 V, VGS = 0 V -- -- -1 µA VDS = -48 V, TC = 150°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -5.7 A -- 0.14 0.175 Ω gFS Forward Transconductance VDS = -30 V, ID = -5.7 A -- 5.1 -- S (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 420 550 pF -- 195 250 pF -- 45 60 pF -- 6.5 25 ns -- 40 90 ns -- 15 40 ns -- 45 100 ns -- 13 17 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, ID = -5.7 A, RG = 25 Ω (Note 4, 5) VDS = -48 V, ID = -11.4 A, VGS = -10 V (Note 4, 5) -- 2.0 -- nC -- 6.3 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -11.4 ISM -- -- -45.6 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -11.4 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -11.4 A, dIF / dt = 100 A/µs (Note 4) -- 83 -- ns -- 0.26 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.44mH, IAS = -11.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -11.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor Corporation FQB11P06 / FQI11P06 Rev. C0 www.fairchildsemi.com FQB11P06 / FQI11P06 P-Channel MOSFET Elerical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V Top : -ID, Drain Current [A] 1 0 10 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 10 10 -ID , Drain Current [A] 1 10 175℃ 25℃ 0 10 -55℃ ※ Notes : 1. VDS = -30V 2. 250µ s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics -IDR , Reverse Drain Current [A] 0.6 VGS = - 10V 0.4 VGS = - 20V 0.2 ※ Note : TJ = 25℃ 0.0 0 10 ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 25℃ 175℃ -1 0 10 20 30 40 50 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 Capacitance [pF] 1 10 800 Coss Ciss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 600 400 Crss 200 0 -1 10 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQB11P06 / FQI11P06 Rev. C0 -VGS, Gate-Source Voltage [V] RDS(on) [Ω], Drain-Source On-Resistance 0.8 10 VDS = -30V 8 VDS = -48V 6 4 2 ※ Note : ID = -11.4 A 0 0 2 4 6 8 10 12 14 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQB11P06 / FQI11P06 P-Channel MOSFET Typical Characteristics (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 µ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -5.7 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 12 Operation in This Area is Limited by R DS(on) 2 10 100 µs -ID, Drain Current [A] -ID, Drain Current [A] 10 1 ms 1 10 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C -1 0 1 10 6 4 2 o 2. TJ = 175 C 3. Single Pulse 10 8 0 25 2 10 10 50 Zθ JC(t), Thermal Response Figure 9. Maximum Safe Operating Area 10 125 150 175 D = 0 .5 0 ※ N o te s : 1 . Z θ J C ( t) = 2 .8 5 ℃ / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .1 0 .0 5 0 .0 2 -1 PDM 0 .0 1 t1 s in g le p u ls e 10 100 Figure 10. Maximum Drain Current vs. Case Temperature 0 .2 10 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQB11P06 / FQI11P06 Rev. C0 www.fairchildsemi.com FQB11P06 / FQI11P06 P-Channel MOSFET Typical Characteristics FQB11P06 / FQI11P06 P-Channel MOSFET Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on VDD VGS td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L tp ID RG VDD DUT -10V tp ©2000 Fairchild Semiconductor Corporation FQB11P06 / FQI11P06 Rev. C0 VDD Time VDS (t) ID (t) IAS BVDSS www.fairchildsemi.com FQB11P06 / FQI11P06 P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2000 Fairchild Semiconductor Corporation FQB11P06 / FQI11P06 Rev. C0 www.fairchildsemi.com FQB11P06 / FQI11P06 P-Channel MOSFET Mechanical Dimensions D2 - PAK Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQB11P06 / FQI11P06 Rev. C0 www.fairchildsemi.com FQB11P06 / FQI11P06 P-Channel MOSFET Mechanical Dimensions I2 - PAK Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQB11P06 / FQI11P06 Rev. C0 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2000 Fairchild Semiconductor Corporation FQB11P06 / FQI11P06 Rev. C0 www.fairchildsemi.com FQB11P06 / FQI11P06 P-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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