FQI8N60CTU

N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Features • 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A Description This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 28 nC) produced using ON Semiconductor’s proprietary planar • Low Crss (Typ. 12 pF) stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state • 100% Avalanche Tested resistance, and to provide superior switching performance and high avalanche energy strength. These devices are • RoHS Compliant suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G S G G DS D2-PAK I2-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB8N60CTM / FQI8N60CTU 600 Unit V 7.5 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) 4.6 A 30 A VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 7.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* (Note 1) 14.7 4.5 3.13 mJ V/ns W 147 1.18 -55 to +150 W W/°C °C 300 °C dv/dt PD Power Dissipation (TC = 25°C) TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. ± 30 V 230 mJ Thermal Characteristics Symbol RJC RJA FQB8N60CTM / FQI8N60CTU Parameter 0.85 Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2003 Semiconductor Components Industries, LLC. October-2017,Rev.3 Unit 62.5 oC/W 40 Publication Order Number: FQI8N60C/D FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET FQB8N60C / FQI8N60C Part Number FQB8N60CTM Top Mark FQB8N60C Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units FQI8N60CTU FQI8N60C I2-PAK Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 600 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C VDS = 600 V, VGS = 0 V 1 µA IDSS Zero Gate Voltage Drain Current -- -- VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.75 A -- 1.0 1.2 Ω gFS Forward Transconductance VDS = 40 V, ID = 3.75 A -- 8.7 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 965 1255 pF -- 105 135 pF -- 12 16 pF -- 16.5 45 ns ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 7.5A, RG = 25 Ω (Note 4) VDS = 480 V, ID = 7.5A, VGS = 10 V (Note 4) -- 60.5 130 -- 81 170 ns -- 64.5 140 ns -- 28 36 nC -- 4.5 -- nC -- 12 -- nC 7.5 A A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.5 A Drain-Source Diode Forward Voltage -- -- 30 VSD -- -- 1.4 V trr Reverse Recovery Time -- 365 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 7.5 A, dIF / dt = 100 A/µs -- 3.4 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2.L = 7.3 mH, IAS = 7.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3.I SD ≤ 7.5 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 o ID, Drain Current [A] 1 10 0 10 150 C o 25 C ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 -1 10 -1 0 10 2 1 10 o -55 C 0 10 10 4 8 6 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.5 1 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 3.0 VGS = 10V 2.5 2.0 1.5 VGS = 20V 1.0 0 10 150℃ ※ Note : TJ = 25℃ -1 0.5 0 5 10 15 20 10 0.2 0.4 ID, Drain Current [A] 2000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1800 0.6 Coss 800 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 600 Crss 400 1.4 VDS = 120V VDS = 300V 8 VDS = 480V 6 4 2 ※ Note : ID = 8A 200 0 -1 10 1.2 12 VGS, Gate-Source Voltage [V] Ciss 1200 1000 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 10 1600 1400 0.8 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ 0 0 10 1 10 0 5 Figure 5. Capacitance Characteristics 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET  !    (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4 A 0.5 0.0 -100 200 -50 50 100 150 200 o TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 2 10 8 Operation in This Area is Limited by R DS(on) 10 µs 100 µs 1 10 6 1 ms 10 ms 100 ms ID, Drain Current [A] ID, Drain Current [A] 0 TJ, Junction Temperature [ C] o DC 0 10 4 -1 10 2 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0 25 3 10 10 50 VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response [oC/W] 100 125 Figure 10. Maximum Drain Current vs Case Temperature Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] 0 D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 ※ N o te s : 1 . Z θ J C ( t) = 0 . 8 5 ℃ /W M a x . 2 . D u t y F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 2 0 .0 1 10 PDM s in g le p u ls e -2 t1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET Typical Characteristics FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET 200nF 12V VGS Same Type as DUT 50KΩ Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Time + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 6 FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET DUT FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 FQB8N60C / FQI8N60C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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