FQL40N50F
N-Channel QFET® FRFET® MOSFET
500 V, 40 A, 110 mΩ
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
• 40 A, 500 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V,
ID = 20 A
• Low Gate Charge (Typ. 155 nC)
• Low Crss (Typ. 95 pF)
• 100% Avalanche Tested
• Fast Recovery Body Diode (Max. 250 ns)
D
G
G
D
TO-264
S
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
FQL40N50F
500
Unit
V
40
A
25
A
(Note 1)
160
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
1800
mJ
IAR
Avalanche Current
(Note 1)
40
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
46
20
460
3.7
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds.
Thermal Characteristics
FQL40N50F
+θ
Thermal Resistance, Junction-to-Case, Max.
+θ
Thermal Resistance, Junction-to-Ambient, Max.
©2006 Fairchild Semiconductor Corporation
FQL40N50F Rev. C1
1
0.27
6?
30
6?
www.fairchildsemi.com
FQL40N50F — N-Channel QFET® FRFET® MOSFET
November 2013
Part Number
Electrical Characteristics
Symbol
Package
TO-264
Top Mark
FQL40N50F
FQL40N50F
Packing Method
Tube
Reel Size
Tape Width
N/A
N/A
Quantity
25 units
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.48
VDS = 500 V, VGS = 0 V
--
--
50
µA
VDS = 400 V, TC = 125°C
--
--
500
µA
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 20 A
--
0.085
0.11
Ω
gFS
Forward Transconductance
VDS = 50 V, ID = 20 A
--
29
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
5800
7500
pF
--
880
1150
pF
--
95
120
pF
--
140
290
ns
--
440
890
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 40 A,
RG = 25 Ω
(Note 4)
VDS = 400 V, ID = 40 A,
VGS = 10 V
(Note 4)
--
350
700
ns
--
250
500
ns
--
155
200
nC
--
37
--
nC
--
78
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
40
ISM
--
--
160
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 40 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
--
250
ns
Qrr
Reverse Recovery Charge
--
1.3
--
µC
VGS = 0 V, IS = 40 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 2.0 mH, IAS = 40 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 40 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2006 Fairchild Semiconductor Corporation
FQL40N50F Rev. C1
2
www.fairchildsemi.com
FQL40N50F — N-Channel QFET® FRFET® MOSFET
Package Marking and Ordering Information
VGS
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID , Drain Current [A]
ID , Drain Current [A]
2
10
Top :
2
10
1
10
150℃
1
10
25℃
-55℃
0
10
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
-1
10
0
10
-1
10
0
1
10
10
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.4
2
0.3
IDR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
10
VGS = 10V
VGS = 20V
0.2
0.1
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0 V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
-1
0
30
60
90
120
150
10
180
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 100V
VDS = 250V
10
10000
VGS, Gate-Source Voltage [V]
Ciss
8000
Capacitance [pF]
0.2
ID , Drain Current [A]
Coss
6000
4000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
2000
0
-1
10
VDS = 400V
8
6
4
2
※ Note : ID = 40 A
0
0
10
0
1
10
Figure 5. Capacitance Characteristics
©2006 Fairchild Semiconductor Corporation
FQL40N50F Rev. C1
30
60
90
120
150
180
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQL40N50F — N-Channel QFET® FRFET® MOSFET
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 20 A
0.5
150
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
3
40
10
Operation in This Area
is Limited by R DS(on)
2
30
100 µs
1 ms
10 µs
ID, Drain Current [A]
ID, Drain Current [A]
10
10 ms
DC
1
10
0
10
※ Notes :
20
10
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
2
10
0
25
3
10
10
50
Figure 9. Maximum Safe Operating Area
ZJC(t), Thermal Response [oC/W]
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0 .5
10
-1
※ N o te s :
1 . Z θ J C ( t) = 0 .2 7 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
0 .0 5
10
PDM
0 .0 2
-2
t1
0 .0 1
t2
s i n g l e p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2006 Fairchild Semiconductor Corporation
FQL40N50F Rev. C1
4
www.fairchildsemi.com
FQL40N50F — N-Channel QFET® FRFET® MOSFET
Typical Characteristics
200nF
12V
FQL40N50F — N-Channel QFET® FRFET® MOSFET
VGS
Same Type
as DUT
50KΩ
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
Time
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2006 Fairchild Semiconductor Corporation
FQL40N50F Rev. C1
5
www.fairchildsemi.com
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2006 Fairchild Semiconductor Corporation
FQL40N50F Rev. C1
6
www.fairchildsemi.com
FQL40N50F — N-Channel QFET® FRFET® MOSFET
DUT
FQL40N50F — N-Channel QFET® FRFET® MOSFET
Mechanical Dimensions
Figure 16. TO264, Molded, 3-Lead, Jedec Variation AA
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO264-003
©2006 Fairchild Semiconductor Corporation
FQL40N50F Rev. C1
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2006 Fairchild Semiconductor Corporation
FQL40N50F Rev. C1
8
www.fairchildsemi.com
FQL40N50F — N-Channel QFET® FRFET® MOSFET
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