FQP3N50C-F080

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Other names and brands may be claimed as the property of others. ® FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Description Features These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. • 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability D { ● ◀ G G{ DS TO-220 FQP Series GD S ▲ ● ● TO-220F FQPF Series { S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current FQP3N50C FQPF3N50C 500 Units V - Continuous (TC = 25°C) 3 3* A - Continuous (TC = 100°C) 1.8 1.8 * A 12 12 * A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 3 A EAR Repetitive Avalanche Energy (Note 1) 6.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Pulsed (Note 1) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 30 V 200 mJ 62 25 W 0.5 0.2 W/°C -55 to +150 °C 300 °C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP3N50C FQPF3N50C Units 2.0 4.9 °C/W RθJC Thermal Resistance, Junction-to-Case RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2005 Semiconductor Components Industries, LLC. October-2017,Rev. 1 Publication Order Number: FQP3N50C/D FQP3N50C/FQPF3N50C 500V N-Channel MOSFET QFET Device Marking Device Package Reel Size Tape Width Quantity FQP3N50C FQP3N50C TO-220 -- -- 50 FQPF3N50C FQPF3N50C TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 2.1 2.5 Ω -- 1.5 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.5 A gFS Forward Transconductance VDS = 40 V, ID = 1.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 280 365 pF -- 50 65 pF -- 8.5 11 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 3 A, RG = 25 Ω (Note 4, 5) VDS = 400 V, ID = 3 A, VGS = 10 V (Note 4, 5) -- 10 30 ns -- 25 60 ns -- 35 80 ns -- 25 60 ns -- 10 13 nC -- 1.5 -- nC -- 5.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3 A -- -- 1.4 V trr Reverse Recovery Time -- 170 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 3 A, dIF / dt = 100 A/µs -- 0.7 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 40mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.onsemi.com 2 (Note 4) FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] ID , Drain Current [A] Top : 1 10 0 10 -1 0 10 25° -55° 2. 250µs Pulse Test -1 10 1 10 0 10 Note 1. VDS = 40V Notes : 1. 250µs Pulse Test 2. TC = 25°C -1 10 150°C 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 8.0 7.0 6.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 7.5 VGS = 10V 6.0 5.5 5.0 4.5 4.0 VGS = 20V 3.5 3.0 2.5 Note : TJ = 25°C 2.0 1.5 0 10 150°C Notes : 1. VGS = 0V 2. 250µs Pulse Test -1 0 2 4 6 8 10 10 0.2 ID, Drain Current [A] 0.4 0.6 0.8 1.0 1.2 Figure 6. Gate Charge Characteristics 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 600 Crss = Cgd Coss 200 Note ; 1. VGS = 0 V Crss 2. f = 1 MHz VGS, Gate-Source Voltage [V] 10 Ciss 400 VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 Note : ID = 3A 0 -1 10 0 0 10 1.4 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Capacitances [pF] 25°C 1 10 0 5 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.onsemi.com 3 10 FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250µA 2.0 1.5 1.0 2. ID = 1.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 TJ, Junction Temperature [°C] 2 10 2 10 ID, Drain Current [A] 1 100 µs 1 ms 10 ms 100 ms 0 10 DC Notes : 1. TC = 25°C -1 10 0 200 100 µs 1 ms 10 ms 100 ms 0 10 DC Notes : 1. TC = 25°C -1 10 2. TJ = 150°C 3. Single Pulse -2 -2 0 1 10 2 10 3 10 10 10 3 2 1 75 100 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 10. MaximumDrain Current 50 0 10 VDS, Drain-Source Voltage [V] ID, Drain Current [A] 150 1 10 3. Single Pulse 0 25 100 Operation in This Area is Limited by R DS(on) 2. TJ = 150°C 10 50 Figure 9-2. Maximum Safe Operating Area of FQPF3N50C Operation in This Area is Limited by R DS(on) 10 -50 TJ, Junction Temperature [°C] Figure 9-1. Maximum Safe Operating Area of FQP3N50C ID, Drain Current [A] Notes : 1. VGS = 10 V 0.5 125 150 TC, Case Temperature [°C] www.onsemi.com 4 3 10 FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. ransient Thermal Response Curve of FQP3N50C ZθJC(t), Thermal Response 10 D=0.5 0 0.2 N otes : 1. Z θ JC (t) = 2 ° C /W M ax. 0.1 10 2. Duty Factor, D=t1 /t2 3. T JM - T C = P DM * Z θ JC (t) 0.05 -1 0.02 0.01 single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1, Square W ave Pulse Duration [sec] Figure 11-2. ransient Thermal Response Curve of FQPF3N50C ZθJC(t), Thermal Response D=0.5 10 0 0.2 0.1 10 -1 10 -2 0.05 Notes : 1. Z θ JC (t) = 4.9 ° C/W Max. 0.02 3. T JM - T C = P DM * Z θ JC (t) 2. Duty Factor, D=t 1/t2 0.01 single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 t 1, Square W ave Pulse Duration [sec] www.onsemi.com 5 10 0 10 1 FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Typical Performance Characteristics (Continued) FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V ID (t) VDS (t) VDD tp tp www.onsemi.com 6 Time DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 7 VDD FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters www.onsemi.com 8 FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Mechanical Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 0.35 ±0.10 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 9.75 ±0.30 MAX1.47 Dimensions in Millimeters www.onsemi.com 9 FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Mechanical Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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