FQP47P06

DATA SHEET www.onsemi.com MOSFET – P-Channel, QFET) -60 V, -47 A, 26 mW VDSS RDS(on) MAX ID MAX −60 V 26 mW @ −10 V −47 A FQP47P06 S Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. G D P−Channel MOSFET Features • −47 A, −60 V, RDS(on) = 26 mW (Max.) @ VGS = −10 V, • • • • ID = −23.5 A Low Gate Charge (Typ. 84 nC) Low Crss (Typ. 320 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating G D S TO−220−3LD CASE 340AT MARKING DIAGRAM $Y&Z&3&K FQP 47P06 $Y &Z &3 &K FQP47P06 = Logo = Assembly Plant Code = 3−Digit Plant Code = 2−Digits Lot Run Traceability Code = Specific Device Code ORDERING INFORMATION Device FQP47P06 © Semiconductor Components Industries, LLC, 2001 May, 2022 − Rev. 3 1 Package Shipping TO−220−3LD 1000 Units / Tube Publication Order Number: FQP47P06/D FQP47P06 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Symbol VDSS ID Parameter FQP47P06 Unit −60 V − Continuous (TC = 25°C) −47 A − Continuous (TC = 100°C) −33.2 A − Pulsed −188 A Drain−Source Voltage Drain Current IDM Drain Current (Note 1) VGSS Gate−Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 820 mJ IAR Avalanche Current (Note 1) −47 A EAR Repetitive Avalanche Energy (Note 1) 16 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) −7.0 V/ns Power Dissipation (TC = 25°C) 160 W 1.06 W/°C −55 to +175 °C 300 °C PD − Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.43 mH, IAS = −47 A, VDD = −25 V, RG = 25 W, Starting TJ = 25°C 3. ISD ≤ −47 A, di/dt ≤ 300A/ms, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL CHARACTERISTICS Symbol Characteristic FQP47P06 Unit RqJC Thermal Resistance, Junction−to−Case, Max. 0.94 °C/W RqCS Thermal Resistance, Case−to−Sink, Typ. 0.5 °C/W RqJA Thermal Resistance, Junction−to−Ambient, Max. 62.5 °C/W www.onsemi.com 2 FQP47P06 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit −60 − − V OFF CHARACTERISTICS BVDSS DBVDSS / DTJ IDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = −250 mA Breakdown Voltage Temperature Coefficient ID = −250 mA, Referenced to 25°C − −0.06 − V/°C Zero Gate Voltage Drain Current VDS = −60 V, VGS = 0 V − − −1 mA VDS = −48 V, TC = 150°C − − −10 mA IGSSF Gate−Body Leakage Current, Forward VGS = −25 V, VDS = 0 V − − −100 nA IGSSR Gate−Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V − − 100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS = VGS, ID = −250 mA −2.0 − −4.0 V RDS(on) Static Drain−Source On−Resistance VGS = −10 V, ID = −23.5 A − 0.021 0.026 W Forward Transconductance VDS = −30 V, ID = −23.5 A (Note 4) − 21 − S VDS = −25 V, VGS = 0 V, f = 1.0 MHz − 2800 3600 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 1300 1700 pF Crss Reverse Transfer Capacitance − 320 420 pF − 50 110 ns − 450 910 ns − 100 210 ns − 195 400 ns − 84 110 nC − 18 − nC − 44 − nC Maximum Continuous Drain−Source Diode Forward Current − − −47 A ISM Maximum Pulsed Drain−Source Diode Forward Current − − −188 A VSD SWITCHING CHARACTERISTICS td(on) Turn−On Delay Time tr Turn−On Rise Time td(off) Turn−Off Delay Time tf Turn−Off Fall Time Qg Total Gate Charge Qgs Gate−Source Charge Qgd Gate−Drain Charge VDD = −30 V, ID = −23.5 A, RG = 25 W (Note 4, 5) VDS = −48 V, ID = −47 A, VGS = −10 V (Note 4, 5) DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING IS Drain−Source Diode Forward Voltage VGS = 0 V, IS = −47 A − − −4.0 V trr Reverse Recovery Time − 130 − ns Qrr Reverse Recovery Charge VGS = 0 V, IS = −47 A, dIF / dt = 100 A/ms (Note 4) − 0.55 − mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse width ≤ 300 ms, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.onsemi.com 3 FQP47P06 TYPICAL CHARACTERISTICS VGS − 15.0 V − 10.0 V − 8.0 V − 7.0 V − 6.0 V − 5.5 V − 5.0 V Bottom: − 4.5 V −ID, Drain Current (A) −ID, Drain Current (A) 102 Top: 102 101 * Notes: 1. 250 ms Pulse Test 2. TC = 25°C 100 10−1 100 25°C 100 10−1 101 175°C 101 −55°C * Notes: 1. VDS = −30 V 2. 250 ms Pulse Test 2 4 −VDS, Drain−Source Voltage (V) 10 Figure 2. Transfer Characteristics 0.10 −IDR, Reverse Drain Current (A) RDS(on), Drain−Source On−Resistance (W) 8 −VGS, Gate−Source Voltage (V) Figure 1. On−Region Characteristics 0.08 VGS = −10 V 0.06 0.04 VGS = −20 V 0.02 0.00 * Note: TJ = 25°C 0 100 200 300 102 101 175°C 25°C 100 * Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 10−1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 400 −VSD, Source−Drain Voltage (V) −ID, Drain Current (A) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 7000 Coss Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd −VGS, Gate−Source Voltage (V) 8000 6000 Capacitance (pF) 6 5000 * Notes: 1. VGS = 0 V 2. f = 1 MHz Ciss 4000 3000 2000 Crss 1000 0 10−1 100 10 VDS = −30 V 8 VDS = −48 V 6 4 2 * Note: ID = −47 A 0 101 0 VDS, Drain−Source Voltage (V) 10 20 30 40 50 60 70 80 QG, Total Gate Charge (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 90 FQP47P06 TYPICAL CHARACTERISTICS (Continued) 2.5 RDS(ON), (normalized) Drain−Source On−Resistance (W) −BVDSS, (Normalized) Drain−Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 −100 * Notes: 1. VGS = 0 V 2. ID = −250 mA −50 0 50 100 150 2.0 1.5 1.0 * Notes: 1. VGS = −10 V 2. ID = −23.5 A 0.5 0.0 −100 200 −50 200 Figure 8. On−Resistance Variation vs. Temperature −ID, Drain Current (A) 40 100 ms 1 ms 10 ms DC * Notes: 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 30 20 10 101 0 25 102 50 −VDS, Drain−Source Voltage (V) 75 100 125 Figure 10. Maximum Drain Current vs. Case Temperature 100 D = 0.5 0.2 10−1 * Notes: 1. ZqJC (t) = 0.94°C/W Max. 2. Duty Factor, D = t1 / t2 3. TJM − TC = PDM x ZqJC (t) 0.1 0.05 0.02 PDM 0.01 single pulse t1 10−2 10−5 t2 10−4 150 TC, Case Temperature (°C) Figure 9. Maximum Safe Operating Area ZqJC (t), Thermal Response −ID, Drain Current (A) 150 50 101 10−1 100 100 Operation in This Area is Limited by RDS(on) 102 100 50 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Figure 7. Breakdown Voltage Variation vs. Temperature 103 0 10−3 10−2 10−1 t1, Square Wave Pulse Duration (s) Figure 11. Transient Thermal Response Curve www.onsemi.com 5 100 101 175 FQP47P06 VGS Same Type as DUT 200 nF 50 k W Qg 12 V −10 V 300 nF Qgs V DS VGS Qgd DUT −3 mA Charge Figure 12. Gate Charge Test Circuit & Waveform V DS RL t on td(on) VDD VGS VGS RG t off td(off) tr tf 10% DUT −10 V VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms E AS + L VDS BV DSS 1 2 LI 2 AS BV DSS * V DD tp Time ID VDD RG VDD DUT −10 V V DS (t) ID (t) I AS tp BVDSS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 FQP47P06 + VDS DUT _ ISD L Driver RG Compliment of DUT (N−Channel) V GS VGS (Driver) ISD VDD • dv/dt controlled by RG • ISD controlled by pulse period D+ Gate Pulse Width Gate Pulse Period 10 V Body Diode Reverse Current I RM (DUT) di/dt IFM , Body Diode Forward Current VDS VSD (DUT) Body Diode Forward Voltage Drop VDD Body Diode Recoverydv/dt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms QFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−3LD CASE 340AT ISSUE A DATE 03 OCT 2017 Scale 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON13818G TO−220−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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