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N-Channel QFET® MOSFET
60 V, 52.4 A, 21 mΩ
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
• 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V,
ID = 26.2 A
• Low Gate Charge (Typ. 24.5 nC)
• Low Crss (Typ. 90 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
GD
S
G
TO-220
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
S
FQP50N06L
60
Unit
V
52.4
A
37.1
A
210
A
VGSS
Gate-Source Voltage
± 20
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
990
mJ
IAR
Avalanche Current
(Note 1)
52.4
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
12.1
7.0
121
0.81
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
FQP50N06L
1.24
Unit
°C/W
62.5
°C/W
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
©2001 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FQP50N06L/D
FQP50N06L — N-Channel QFET® MOSFET
FQP50N06L
Part Number
FQP50N06L
Top Mark
FQP50N06L
Package
TO-220
Electrical Characteristics
Symbol
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
60
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
--
0.06
--
V/°C
VDS = 60 V, VGS = 0 V
--
--
1
μA
VDS = 48 V, TC = 150°C
--
--
10
μA
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
1.0
--
2.5
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 26.2 A
VGS = 5 V, ID =26.2 A
---
0.017
0.020
0.021
0.025
Ω
gFS
Forward Transconductance
VDS = 25 V, ID = 26.2 A
--
40
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1250
1630
pF
--
445
580
pF
--
90
120
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 26.2 A,
RG = 25 Ω
(Note 4)
VDS = 48 V, ID = 52.4 A,
VGS = 5 V
(Note 4)
--
20
50
ns
--
380
770
ns
--
80
170
ns
--
145
300
ns
--
24.5
32
nC
--
6
--
nC
--
14.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
52.4
A
ISM
--
--
210
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 52.4 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
65
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 52.4 A,
dIF / dt = 100 A/μs
--
125
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 300 μH, IAS = 52.4 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 52.4 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
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2
FQP50N06L — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Top :
ID, Drain Current [A]
10
2
10
ID, Drain Current [A]
2
1
1
10
10
175℃
25℃
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 25V
2. 250μs Pulse Test
-55℃
0
0
10
-1
10
0
10
1
10
0
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
50
IDR, Reverse Drain Current [A]
R DS(O N) [m Ω ],
Drain-Source On-Resistance
60
VGS = 10V
40
VGS = 5V
30
1
10
20
10
※ Note : TJ = 25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
175℃
0
0
25
50
75
100
125
150
175
200
0
10
ID, Drain Current [A]
0.2
1.0
1.2
1.4
1.6
12
Coss
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
2000
Crss
V G S , Gate-Source Voltage [V]
Capacitance [pF]
0.8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
1000
0.6
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4000
0.4
10
VDS = 30V
VDS = 48V
8
6
4
2
※ Note : ID = 52.4A
0
0
-1
10
0
0
10
10
20
30
40
50
1
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
FQP50N06L — N-Channel QFET® MOSFET
Typical Characteristics
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.0
1.1
1.5
1.0
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
0.5
150
※ Notes :
1. VGS = 10 V
2. ID = 26.2 A
0.0
-100
200
-50
50
100
150
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3
200
60
10
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
50
100 μs
2
10
1 ms
10 ms
DC
1
10
※ Notes :
40
30
20
10
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0
10
-1
10
0
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
10
75
100
125
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
0 .2
※ N otes :
1 . Z θ J C( t ) = 1 . 2 4 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .1
10
-1
0 .0 5
PDM
0 .0 2
t1
0 .0 1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
(t),Thermal
Thermal
Response
ZZθJC
(t),
Response
[oC/W]
θ JC
ID, Drain Current [A]
0
o
o
10
-3
10
-2
10
-1
10
0
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
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4
10
1
175
FQP50N06L — N-Channel QFET® MOSFET
Typical Characteristics (continued)
50KΩ
200nF
12V
FQP50N06L — N-Channel QFET® MOSFET
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
Time
FQP50N06L — N-Channel QFET® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
VDD
FQP50N06L — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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