FQP9N25CTSTU

FQP9N25C / FQPF9N25C N-Channel QFET® MOSFET 250 V, 8.8 A, 430 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 8.8 A, 250 V, RDS(on)=430 mΩ(Max.)@VGS=10 V, ID=4.4 A • Low Gate Charge (Typ. 26.5 nC) • Low Crss (Typ. 45.5 pF) • 100% Avalanche Tested D { ● ◀ G{ G DS TO-220 ▲ ● ● TO-220F GD S { S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQP9N25C FQPF9N25C Unit V 8.8 8.8 * A 5.6 5.6 * A 35.2 35.2 * A 250 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 285 mJ IAR Avalanche Current (Note 1) 8.8 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 7.4 5.5 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 74 0.59 38 0.3 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2004 Fairchild Semiconductor Corporation FQP9N25C / FQPF9N25C Rev. C0 FQP9N25C 1.69 FQPF9N25C 3.29 Unit °C/W www.fairchildsemi.com FQP9N50C / FQPF9N50C N-Channel MOSFET March 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 250 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.30 IDSS IGSSF IGSSR VDS = 250 V, VGS = 0 V -- -- 10 µA VDS = 200 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.35 0.43 Ω -- 7.0 -- S Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.4 A gFS Forward Transconductance VDS = 40 V, ID = 4.4 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 545 710 pF -- 115 150 pF -- 45.5 60 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125 V, ID = 8.8 A, RG = 25 Ω (Note 4, 5) VDS = 200 V, ID = 8.8 A, VGS = 10 V (Note 4, 5) -- 15 40 ns -- 85 180 ns -- 90 190 ns -- 65 140 ns -- 26.5 35 nC -- 3.5 -- nC -- 13.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8.8 A ISM -- -- 35.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 8.8 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8.8 A, dIF / dt = 100 A/µs (Note 4) -- 218 -- ns -- 1.58 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.9mH, IAS = 8.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 8.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation FQP9N25C / FQPF9N25C Rev. C0 www.fairchildsemi.com FQP9N50C / FQPF9N50C N-Channel MOSFET Electrical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 o -55 C 10 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1.25 1.00 VGS = 10V 0.75 0.50 VGS = 20V 0.25 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test ※ Note : TJ = 25℃ 0.00 -1 0 10 20 10 30 0.2 0.4 Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 Ciss Coss Crss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 0 -1 10 1.0 1.2 1.4 12 VGS, Gate-Source Voltage [V] Capacitance [pF] 1500 500 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] VDS = 50V 10 VDS = 125V VDS = 200V 8 6 4 2 ※ Note : ID = 8.8A 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation FQP9N25C / FQPF9N25C Rev. C0 0 0 5 10 15 20 25 30 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQP9N50C / FQPF9N50C N-Channel MOSFET Typical Characteristics (Continued) 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.4 A 0.5 0.0 -100 200 -50 o 50 100 150 Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 2 2 10 Operation in This Area is Limited by R DS(on) 10 ID, Drain Current [A] 100 µs 1 1 ms 10 ms DC 0 10 ※ Notes : Operation in This Area is Limited by R DS(on) 10 µs 100 µs 1 10 1 ms 10 ms DC 0 10 ※ Notes : o o 1. TC = 25 C 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse -1 -1 10 200 o TJ, Junction Temperature [ C] 10 ID, Drain Current [A] 0 TJ, Junction Temperature [ C] 0 1 10 10 2 10 0 10 10 1 10 2 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP9N25C Figure 9-2. Maximum Safe Operating Area for FQPF9N25C 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature ©2004 Fairchild Semiconductor Corporation FQP9N25C / FQPF9N25C Rev. C0 www.fairchildsemi.com FQP9N50C / FQPF9N50C N-Channel MOSFET Typical Characteristics ZθJC(t), Thermal Response 10 0 (Continued) D = 0 .5 ※ N o te s : 1 . Z θ J C ( t) = 1 .6 9 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 10 0 .0 5 -1 0 .0 2 0 .0 1 PDM s in g le p u ls e 10 t1 -2 10 FQP9N50C / FQPF9N50C N-Channel MOSFET Typical Characteristics -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-1. Transient Thermal Response Curve for FQP9N25C ZθJC(t), Thermal Response D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C ( t) = 3 . 2 9 ℃ /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .1 0 .0 5 10 0 .0 2 -1 0 .0 1 PDM s in g le p u ls e t1 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF9N25C ©2004 Fairchild Semiconductor Corporation FQP9N25C / FQPF9N25C Rev. C0 www.fairchildsemi.com FQP9N50C / FQPF9N50C N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2004 Fairchild Semiconductor Corporation FQP9N25C / FQPF9N25C Rev. C0 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQP9N50C / FQPF9N50C N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2004 Fairchild Semiconductor Corporation FQP9N25C / FQPF9N25C Rev. C0 www.fairchildsemi.com FQP9N50C / FQPF9N50C N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FQP9N25C / FQPF9N25C Rev. C0 www.fairchildsemi.com FQP9N50C / FQPF9N50C N-Channel MOSFET Mechanical Dimensions TO-220F Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FQP9N25C / FQPF9N25C Rev. C0 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2004 Fairchild Semiconductor Corporation FQP9N25C / FQPF9N25C Rev. C0 www.fairchildsemi.com FQP9N50C / FQPF9N50C N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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