FQPF10N60CT

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 18 pF) • 100% Avalanche Tested D GD S G G D S TO-220 TO-220F S Absolute Maximum Ratings T Symbol o C = 25 C unless otherwise noted. Parameter FQP10N60C VDSS Drain-Source Voltage ID Drain Current IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) FQPF10N60C 600 - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Unit V 9.5 9.5 * A 5.7 5.7 * A 38 38 * A ± 30 V 700 mJ IAR Avalanche Current (Note 1) 9.5 A EAR Repetitive Avalanche Energy (Note 1) 15.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering, 1/8" from case for 5 seconds 4.5 156 - Derate above 25°C 1.25 V/ns 50 W 0.4 W/°C -55 to +150 °C 300 °C * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP10N60C FQPF10N60C Unit 0.8 2.5 °C/W RθJC Thermal Resistance, Junction-to-Case, Max. RθCS Thermal Resistance, Case-to-Sink, Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W ©2003 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev C1 1 www.fairchildsemi.com FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 Part Number FQP10N60C Top Mark FQP10N60C Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FQPF10N60C FQPF10N60C TO-220F Tube N/A N/A 50 units FQPF10N60CT FQPF10N60CT TO-220F Tube N/A N/A 50 units FQPF10N60C_F105 FQPF10N60C TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.75 A -- 0.6 0.73 Ω gFS Forward Transconductance VDS = 40 V, ID = 4.75 A -- 8.0 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1570 2040 pF -- 166 215 pF -- 18 24 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 300 V, ID = 9.5A, RG = 25 Ω (Note 4) VDS = 480 V, ID = 9.5A, VGS = 10 V (Note 4) Gate-Drain Charge -- 23 55 ns -- 69 150 ns -- 144 300 ns -- 77 165 ns -- 44 57 nC -- 6.7 -- nC -- 18.5 -- nC 9.5 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 38 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A -- -- 1.4 V trr Reverse Recovery Time 420 -- ns Reverse Recovery Charge VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/µs -- Qrr -- 4.2 -- µC NOTES: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 14.2 mH, IAS = 9.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 9.5 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2003 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev C1 2 www.fairchildsemi.com FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 -1 0 0 10 2. 250µs Pulse Test -1 10 2 1 10 -55°C 25°C * Notes : 1. VDS = 40V * Notes : 1. 250µs Pulse Test 2. TC = 25°C 10 150°C 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 2.0 1.5 VGS = 10V 1.0 VGS = 20V 0.5 1 10 0 10 150°C * Notes : 1. VGS = 0V 25°C 2. 250µs Pulse Test * Note : TJ = 25°C 0.0 -1 0 5 10 15 20 25 30 10 35 0.2 0.4 ID, Drain Current [A] 0.6 0.8 Figure 5. Capacitance Characteristics Coss = Cds + Cgd Crss = Cgd VDS = 120V VGS, Gate-Source Voltage [V] 10 Ciss Capacitance [pF] 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) 2000 Coss 1500 1.2 Figure 6. Gate Charge Characteristics 3000 2500 1.0 VSD, Source-Drain voltage [V] * Notes ; 1. VGS = 0 V 1000 Crss 2. f = 1 MHz 500 VDS = 300V VDS = 480V 8 6 4 2 * Note : ID = 9.5A 0 -1 10 0 0 10 0 1 10 ©2003 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev C1 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250µA 0.8 -100 -50 0 50 100 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 4.75 A 150 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9-1. Maximum Safe Operating Area for FQP10N60C Figure 9-2. Maximum Safe Operating Area for FQPF10N60C 2 10 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 2 10 10 µs 10 µs 1 10 100 µs ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms DC 0 10 * Notes : 1. TC = 25°C 1 10 1 ms 10 ms 100 ms DC 0 10 -1 * Notes : 1. TC = 25°C 10 2. TJ = 150°C 2. TJ = 150°C 3. Single Pulse 3. Single Pulse -1 10 -2 0 1 10 2 10 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [°C] ©2003 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev C1 4 www.fairchildsemi.com FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET Typical Performance Characteristics FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP10N60C 0 D = 0 .5 0 .2 10 -1 * N o te s : 1 . Z θ JC ( t) = 0 .8 ° C /W M a x . 0 .1 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z θJC ( t) 0 .0 5 0 .0 2 PDM 0 .0 1 θJC (t), Thermal Response [oC/W] 10 t1 Z s in g le p u ls e 10 -2 10 t2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 10 D = 0 .5 0 0 .2 * N o te s : 1 . Z θJC ( t) = 2 .5 °C /W M a x . 0 .1 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z θJC ( t) 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM Z θJC (t), Thermal Response [oC/W] Figure 11-2. Transient Thermal Response Curve for FQPF10N60C t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] ©2003 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev C1 5 www.fairchildsemi.com FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDS DSS S - VDD L BVDS DSS S IAS ID RG VGS VDD ID (t) VDS (t) VDD DUT tp tp Ti Tim me Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2003 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev C1 6 www.fairchildsemi.com FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET DUT + VDS _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Same Type Same as DUT VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod Gate Pul ulsse W idth D = -------------------------Gate Ga te Pu Pullse Pe Perriod 10V 10 V IFM , Body Body Di Diod ode e Forward Curr rren entt di/d di /dtt IRM Body Bo dy Diod ode e Reverse Curren entt VDS ( DUT ) Body Bo dy Di Diod ode e Recov cove ery dv dv/d /dtt VSD VDD Body Diode Body For Forw ward Vol olttag age e Dr Drop op Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2003 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev C1 7 www.fairchildsemi.com FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2003 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev C1 8 www.fairchildsemi.com FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2003 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2003 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev C1 10 www.fairchildsemi.com FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ F-PFS™ AccuPower™ ® FRFET® AX-CAP®* ®* ® SM BitSiC™ Global Power Resource PowerTrench GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ SuperSOT™-6 OptoHiT™ FAST® VCX™ SuperSOT™-8 OPTOLOGIC® FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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