FQP13N50 / FQPF13N50
N-Channel QFET MOSFET
500 V, 12.5 A, 430 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
• 12.5 A, 500 V, RDS(on) = 430 mΩ (Max) @VGS = 10 V,
ID = 6.25 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
D
!
●
◀
G!
G DS
TO-220
TO-220F
GD S
FQP Series
▲
●
●
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP13N50
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
- Pulsed
FQPF13N50
Unit
V
12.5
12.5 *
A
7.9
7.9 *
A
50
50 *
A
500
(Note 1)
± 30
V
(Note 2)
810
mJ
Avalanche Current
(Note 1)
12.5
A
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
17
4.5
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
170
1.35
56
0.45
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
FQP13N50
0.74
FQPF13N50
2.23
Unit
°C/W
0.5
--
°C/W
www.fairchildsemi.com
FQP13N50 / FQPF13N50 N-Channel MOSFET
March 2013
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
500
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.48
IDSS
IGSSF
IGSSR
VDS = 500 V, VGS = 0 V
--
--
1
µA
VDS = 400 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
--
0.33
0.43
Ω
--
10
--
S
--
1800
2300
pF
--
245
320
pF
--
25
35
pF
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 6.25 A
gFS
Forward Transconductance
VDS = 50 V, ID = 6.25 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 13.4 A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 13.4 A,
VGS = 10 V
(Note 4, 5)
--
40
90
ns
--
140
290
ns
--
100
210
ns
--
85
180
ns
--
45
60
nC
--
11
--
nC
--
22
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
12.5
A
ISM
--
--
50
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 12.5 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
290
--
ns
Qrr
Reverse Recovery Charge
--
2.6
--
µC
VGS = 0 V, IS = 13.4 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.3mH, IAS = 12.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 13.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
www.fairchildsemi.com
FQP13N50 / FQPF13N50 N-Channel MOSFET
Electrical Characteristics
VGS
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID , Drain Current [A]
1
10
ID , Drain Current [A]
1
10
0
10
150℃
25℃
0
10
-55℃
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.4
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1.2
VGS = 10V
1.0
VGS = 20V
0.8
0.6
0.4
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.2
※ Note : TJ = 25℃
0.0
-1
0
10
20
30
50
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3500
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
VDS = 100V
Ciss
Coss
2000
1500
1000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
500
VGS, Gate-Source Voltage [V]
10
2500
Capacitance [pF]
40
VDS = 250V
VDS = 400V
8
6
4
2
※ Note : ID = 13.4 A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
0
5
10
15
20
25
30
35
40
45
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FQP13N50 / FQPF13N50 N-Channel MOSFET
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 6.7 A
0.5
0.0
-100
200
0
50
100
150
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Operation in This Area
is Limited by R DS(on)
2
10
10 µs
100 µs
1 ms
10 ms
100 ms
10 µs
ID, Drain Current [A]
1
1 ms
1
10
10 ms
DC
0
10
※ Notes :
10
DC
0
10
-1
※ Notes :
10
o
o
1. TC = 25 C
1. TC = 25 C
o
o
2. TJ = 150 C
3. Single Pulse
2. TJ = 150 C
3. Single Pulse
-1
10
200
Operation in This Area
is Limited by R DS(on)
2
10
100 µs
ID, Drain Current [A]
-50
o
o
-2
0
1
10
2
10
3
10
10
10
0
10
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP13N50
Figure 9-2. Maximum Safe Operating Area
for FQPF13N50
15
ID, Drain Current [A]
12
9
6
3
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
www.fairchildsemi.com
FQP13N50 / FQPF13N50 N-Channel MOSFET
Typical Characteristics
(Continued)
0
10
D = 0 .5
0 .2
10
※ N o te s :
1 . Z θ J C ( t) = 0 .7 4 ℃ / W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
-1
0 .1
0 .0 5
PDM
0 .0 2
JC
( t) , T h e r m a l R e s p o n s e
FQP13N50 / FQPF13N50 N-Channel MOSFET
Typical Characteristics
0 .0 1
t1
Z
θ
s i n g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
10
D = 0 .5
0
0 .2
※ N o te s :
1 . Z θ J C ( t) = 2 .2 3 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1
10
0 .0 5
-1
0 .0 2
PDM
0 .0 1
θ JC
( t) , T h e r m a l R e s p o n s e
Figure 11-1. Transient Thermal Response Curve
for FQP13N50
t1
Z
t2
10
s i n g l e p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
for FQPF13N50
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
www.fairchildsemi.com
FQQP13N50 / FQPF13N50 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
ID (t)
VDS (t)
VDD
tp
Time
www.fairchildsemi.com
FQP13N50 / FQPF13N50 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
www.fairchildsemi.com
FQP13N50 / FQPF13N50 N-Channel MOSFET
Package Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
www.fairchildsemi.com
FQP13N50 / FQPF13N50 N-Channel MOSFET
Package Dimensions
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
www.fairchildsemi.com
FQP13N50 / FQPF13N50 N-Channel MOSFET
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intended to be an exhaustive list of all such trademarks.
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