FQPF5N50CFTU

TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • Fast switching • 100% avalanche tested • Improved dv/dt capability D ! ● ◀ G! ▲ ● ● TO-220F GD S FQPF Series ! S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) FQPF5N50CF Units 500 V 5 A 2.9 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 5 A EAR Repetitive Avalanche Energy (Note 1) 7.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Pulsed (Note 1) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 20 A ± 30 V 300 mJ 38 W 0.3 W/°C -55 to +150 °C 300 °C FQPF5N50CF Units 3.31 °C/W Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJS Thermal Resistance, Case-to-Sink Typ. RθJA Thermal Resistance, Junction-to-Ambient ©2005 Fairchild Semiconductor Corporation FQPF5N50CF Rev. B 1 -- °C/W 62.5 °C/W www.fairchildsemi.com FQPF5N50CF 500V N-Channel MOSFET FRFET Device Marking Device Package Reel Size Tape Width FQPF5N50CF FQPF5N50CF TO-220F - - Electrical Characteristics Symbol Quantity TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics VGS = 0 V, ID = 250 µA BVDSS Drain-Source Breakdown Voltage 500 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coef- ID = 250 µA, Referenced to 25°C ficient -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 1.3 1.55 Ω -- 5.2 -- S -- 480 625 pF VDS = 500 V, VGS = 0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.5A gFS Forward Transconductance VDS = 40 V, ID = 2.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 80 105 pF -- 15 20 pF -- 12 35 ns -- 46 100 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 5A, RG = 25 Ω (Note 4, 5) VDS = 400 V, ID = 5A, VGS = 10 V (Note 4, 5) -- 50 110 ns -- 48 105 ns -- 18 24 nC -- 2.2 -- nC -- 9.7 -- nC 5 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 20 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5 A -- -- 1.4 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 5 A, dIF / dt = 100 A/µs (Note 4) -- 65 -- ns -- 0.11 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2 FQPF5N50CF Rev. B www.fairchildsemi.com FQPF5N50CF 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 -1 0 10 25°C 10 2. 250µs Pulse Test -1 10 2 1 10 -55°C 0 Notes : 1. VDS = 40V Notes : 1. 250µs Pulse Test 2. TC = 25°C -1 10 150°C 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 4.5 1 10 3.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 4.0 VGS = 10V 3.0 2.5 2.0 VGS = 20V 1.5 1.0 Note : TJ = 25°C 0 10 150? Notes : 1. VGS = 0V 25? 2. 250µs Pulse Test -1 0.5 0 5 10 10 15 0.2 0.4 0.6 ID, Drain Current [A] 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 1200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 10 VGS, Gate-Source Voltage [V] Capacitance [pF] 1000 Ciss Coss 600 400 Notes ; 1. VGS = 0 V Crss 2. f = 1 MHz 200 VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 Note : ID = 5A 0 -1 10 0 0 10 0 1 10 3 FQPF5N50CF Rev. B 5 10 15 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com FQPF5N50CF 500V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250µA 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 2.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 Figure 9. Maximum Safe Operating Area ID, Drain Current [A] ID, Drain Current [A] 100 µs 10 1 ms 10 ms 100 ms 0 DC -1 200 5 10 µs 10 150 6 1 10 100 Figure 10. Maximum Drain Current vs Case Temperature Operation in This Area is Limited by R DS(on) 2 10 50 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Notes : 1. TC = 25°C 4 3 2 1 2. TJ = 150°C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [°C] VDS, Drain-Source Voltage [V] Figure 10. Transient Thermal Response Curve 0 0 .2 0 .1 N o te s : 1 . Z θ J C ( t) = 3 .3 1 ° C / W M a x . 0 .0 5 10 -1 2 . D u t y F a c to r , D = t 1 / t 2 0 .0 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 1 θJC (t), Thermal Response D = 0 .5 10 PDM Z s in g le p u ls e t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] 4 FQPF5N50CF Rev. B www.fairchildsemi.com FQPF5N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) FQPF5N50CF 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp tp 5 FQPF5N50CF Rev. B VDS (t) VDD DUT 10V ID (t) Time www.fairchildsemi.com FQPF5N50CF 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 FQPF5N50CF Rev. B www.fairchildsemi.com 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters 7 FQPF5N50CF Rev. B www.fairchildsemi.com FQPF5N50CF 500V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 8 FQPF5N50CF Rev. B www.fairchildsemi.com FQPF5N50CF 500V N-Channel MOSFET TRADEMARKS