FQPF5P20RDTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQPF5P20 P-Channel QFET® MOSFET -200 V, -3.4 A, 1.4 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • -3.4 A, -200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = -10 V, ID = -1.7 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 12 pF) • 100% Avalanche Tested S G D G G D S TO-220F TO-220F LG-formed S D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. FQPF5P20 FQPF5P20RDTU -200 Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD TJ, TSTG TL - Pulsed Unit V -3.4 A -2.15 A -13.6 A ± 30 V (Note 2) 330 mJ Avalanche Current (Note 1) -3.4 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 3.8 -5.5 38 0.3 -55 to +150 mJ V/ns W W/°C °C 300 °C (Note 1) (Note 3) - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. Thermal Characteristics Symbol FQPF5P20 FQPF5P20RDTU 3.29 Parameter RθJC Thermal Resistance, Junction-to-Case, Max. RθJA Thermal Resistance, Junction-to-Ambient, Max. ©2000 Fairchild Semiconductor Corporation FQPF5P20 Rev. C1 1 62.5 Unit °C/W www.fairchildsemi.com FQPF5P20 — P-Channel QFET® MOSFET August 2014 Part Number Top Mark FQPF5P20 FQPF5P20 FQPF5P20RDTU FQPF5P20 Elerical Characteristics Symbol Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TO-220F (LG-formed) Tube N/A N/A 50 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit -200 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, Referenced to 25°C -- -0.17 -- V/°C -1 μA μA IDSS Zero Gate Voltage Drain Current VDS = -200 V, VGS = 0 V -- -- VDS = -160 V, TC = 125°C -- -- -10 IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 μA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.7 A -- 1.1 1.4 Ω gFS Forward Transconductance VDS = -40 V, ID = -1.7 A -- 2.15 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 330 430 pF -- 75 98 pF -- 12 15 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -100 V, ID = -4.8 A, RG = 25 Ω (Note 4) VDS = -160 V, ID = -4.8 A, VGS = -10 V (Note 4) -- 9 28 ns -- 70 150 ns -- 12 35 ns -- 25 60 ns -- 10 13 nC -- 2.8 -- nC -- 5.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -3.4 A ISM Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -3.4 A Drain-Source Diode Forward Voltage -- -- -13.6 A VSD -- -- -5.0 V trr Reverse Recovery Time -- 175 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = -4.8 A, dIF / dt = 100 A/μs -- 1.07 -- μC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 42.8 mH, IAS = -3.4 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -4.8 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2000 Fairchild Semiconductor Corporation FQPF5P20 Rev. C1 2 www.fairchildsemi.com FQPF5P20 — P-Channel QFET® MOSFET Package Marking and Ordering Information VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V 1 1 10 Top : 0 10 -ID , Drain Current [A] -ID, Drain Current [A] 10 -1 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 150℃ 25℃ ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test -55℃ -2 10 0 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.0 1 -IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 10 VGS = - 10V 2.4 VGS = - 20V 1.8 1.2 0.6 ※ Note : TJ = 25℃ 0.0 0 10 150℃ -1 0 3 6 9 10 12 0.0 0.5 -ID , Drain Current [A] 750 -VGS, Gate-Source Voltage [V] Ciss Coss 300 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 0 -1 10 0 10 2.5 3.0 10 VDS = -40V 10 VDS = -100V VDS = -160V 8 6 4 2 ※ Note : ID = -4.8 A 0 1 0 2 4 6 8 10 12 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQPF5P20 Rev. C1 2.0 12 600 150 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 450 1.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQPF5P20 — P-Channel QFET® MOSFET Typical Characteristics (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -2.4 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 4 Operation in This Area is Limited by R DS(on) 1 ms -ID, Drain Current [A] -ID, Drain Current [A] 1 10 10 ms 100 ms DC 0 10 ※ Notes : 3 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area ZθJC(t), Thermal Response [oC/W] Zθ JC(t), Thermal Response 75 100 125 150 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C ( t) = 3 . 2 9 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQPF5P20 Rev. C1 4 www.fairchildsemi.com FQPF5P20 — P-Channel QFET® MOSFET Typical Characteristics 200nF 12V FQPF5P20 — P-Channel QFET® MOSFET VGS Same Type as DUT 50KΩ Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA IG = const. Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT VGS -10V VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD VDD VGS -10V Time VDS (t) ID (t) DUT IAS BVDSS tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation FQPF5P20 Rev. C1 5 www.fairchildsemi.com FQPF5P20 — P-Channel QFET® MOSFET + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current I SD ( DUT ) IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation FQPF5P20 Rev. C1 6 www.fairchildsemi.com B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 6.88 6.48 1 X 45° B R1.00 1 3 1.47 1.24 R1.00 0.90 0.70 2.14 0.50 M 2.54 2.54 B 2.96 2.56 8.50 7.50 B A B 4.50 3.50 B B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. DRAWING FILE NAME: TO220N03REV2 16.07 15.67 0.60 0.45 4.80 4.20 B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° B 16.00 15.60 16.07 15.67 (3.23) B 1 2.14 3 1.47 1.24 2.96 2.56 0.90 0.70 10.05 9.45 0.50 M A 30° 0.45 0.25 2.54 B 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5 0.60 0.45 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com