Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FQP8N90C / FQPF8N90C
N-Channel QFET® MOSFET
900 V, 6.3 A, 1.9 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V,
ID = 3.15 A
• Low Gate Charge (Typ. 35 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
D
G
D
S
G
G
D
S
TO-220
TO-220F
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP8N90C
FQPF8N90C
Unit
V
6.3
6.3 *
A
3.8
3.8 *
A
25
25 *
A
900
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
6.3
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
17.1
4.0
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
± 30
V
850
mJ
171
1.37
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
60
0.48
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
FQP8N90C
0.73
FQPF8N90C
2.08
Unit
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ, Max.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
62.5
°C/W
Semiconductor Components Industries, LLC, 2016
December, 2016, Rev. 1.5
Publication Order Number:
FQP8N90C / FQPF8N60C/D
1
FQP8N90C / FQPF8N90C — N-Channel QFET® MOSFET
www.onsemi.com
Part Number
FQP8N90C
Top Mark
FQP8N90C
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
FQPF8N90C
FQPF8N90C
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
900
--
--
V
--
0.95
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
--
--
10
µA
VDS = 720 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.15 A
--
1.6
1.9
Ω
gFS
Forward Transconductance
VDS = 50 V, ID = 3.15 A
--
5.5
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1600
2080
pF
--
130
170
pF
--
12
15
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 450 V, ID = 8 A,
RG = 25 Ω
(Note 4)
VDS = 720 V, ID = 8 A,
VGS = 10 V
(Note 4)
--
40
90
ns
--
110
230
ns
--
70
150
ns
--
70
150
ns
--
35
45
nC
--
10
--
nC
--
14
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
6.3
ISM
--
--
25
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 6.3 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
530
--
ns
Qrr
Reverse Recovery Charge
--
5.8
--
µC
VGS = 0 V, IS = 8 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 40 mH, IAS = 6.3 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 8 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
www.onsemi.com
2
FQP8N90C / FQPF8N90C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : .5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
0
-55 C
o
10
25 C
∝ Notes :
1. 250レs Pulse Test
2. TC = 25∩
-1
10
∝ Notes :
1. VDS = 50V
2. 250レs Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.5
IDR, Reverse Drain Current [A]
RDS(ON) [ヘ ],
Drain-Source On-Resistance
4.0
VGS = 10V
3.0
VGS = 20V
2.5
2.0
1.5
1
10
0
10
150∩
25∩
∝ Notes :
1. VGS = 0V
2. 250レs Pulse Test
∝ Note : TJ = 25∩
1.0
-1
0
5
10
10
20
0.6
0.8
1.0
1.2
1.4
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 180V
10
VGS, Gate-Source Voltage [V]
2500
Ciss
1500
Coss
∝ Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
0.4
VSD, Source-Drain voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
0.2
ID, Drain Current [A]
3000
Capacitance [pF]
15
VDS = 450V
VDS = 720V
8
6
4
2
∝ Note : ID = 8A
0
-1
10
0
0
10
1
10
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
www.onsemi.com
3
FQP8N90C / FQPF8N90C — N-Channel QFET® MOSFET
!
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
∝ Notes :
1. VGS = 0 V
2. ID = 250 レA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
∝ Notes :
1. VGS = 10 V
2. ID = 3.15 A
0.5
0.0
-100
200
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
1
10
1 ms
10 ms
DC
0
∝ Notes :
-1
10
1 ms
10 ms
100 ms
DC
0
10
∝ Notes :
-1
o
1. TC = 25 C
o
o
2. TJ = 150 C
3. Single Pulse
-2
-2
0
1
10
2
10
10
3
10
10
6
4
2
100
2
10
3
10
Figure 9-2. Maximum Safe Operating Area
for FQPF8N90C
8
75
1
10
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP8N90C
50
0
10
VDS, Drain-Source Voltage [V]
ID, Drain Current [A]
200
100 µs
1
10
o
1. TC = 25 C
0
25
150
10
2. TJ = 150 C
3. Single Pulse
10
100
Operation in This Area
is Limited by R DS(on)
2
10
10
50
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
2
0
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
10
-50
o
o
TJ, Junction Temperature [ C]
125
150
TC, Case Temperature [∩ ]
Figure 10. Maximum Drain Current
vs Case Temperature
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4
FQP8N90C / FQPF8N90C — N-Channel QFET® MOSFET
Typical Characteristics
ZJC(t), Thermal Response [oC/W]
10
(Continued)
0
D = 0 .5
0 .2
10
∝ N o te s :
1 . Z ヨ J C (t) = 0 .7 3 ∩ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z ヨ J C (t)
-1
0 .1
0 .0 5
PDM
0 .0 2
t1
0 .0 1
10
s in g le p u ls e
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
ZJC(t), Thermal Response [oC/W]
Figure 11-1. Transient Thermal Response Curve for FQP8N90C
10
D = 0 .5
0
0 .2
∝ N o te s :
1 . Z ヨ J C (t) = 2 .0 8 ∩ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z ヨ J C (t)
0 .1
10
0 .0 5
-1
PDM
0 .0 2
t1
0 .0 1
10
-2
10
t2
s in g le
e pu se
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF8N90C
www.onsemi.com
5
FQP8N90C / FQPF8N90C — N-Channel QFET® MOSFET
Typical Characteristics
FQP8N90C / FQPF8N90C — N-Channel QFET® MOSFET
200nF
12V
VGS
Same Type
as DUT
50KΩ
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
6
Time
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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7
FQP8N90C / FQPF8N90C — N-Channel QFET® MOSFET
DUT
SUPPLIER "B" PACKAGE
SHAPE
3.50
10.67
9.65 E
SUPPLIER "A" PACKAGE
SHAPE
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
16.51
15.42
E
9.40
8.13 E
1
[2.46]
2
3
C
4.10
2.70
14.04
12.70
2.13
2.06
FRONT VIEWS
4.70
4.00
1.62 H
1.42
"A1"
8.65
7.59
SEE NOTE "F"
1.62
1.10
2.67
2.40
1.00
0.55
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
3
0.60
0.36
SIDE VIEW
2.85
2.10
2
1
BACK VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
B
A
10.36
9.96
B
3.28
3.08
7.00
3.40
3.20
2.66
2.42
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
B
16.00
15.60
16.07
15.67
(3.23) B
1
2.14
3
1.47
1.24
2.96
2.56
0.90
0.70
10.05
9.45
0.50 M
A
30°
0.45
0.25
2.54
B
2.54
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
0.60
0.45
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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