P-Channel QFET® MOSFET
-200 V, -0.67 A, 2.7 Ω
Features
Description
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
• -0.67 A, -200 V, RDS(on) = 2.7 Ω (Max.) @VGS = 10 V,
ID = 0.335 A
• Low Gate Charge ( Typ. 6.0 nC)
• Low Crss ( Typ. 7.5 pF)
D
D
S
SOT-223
G
D
Absolute Maximum Ratings
Symbol
VDSS
ID
G
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
TJ, TSTG
TL
S
TC = 25°C unless otherwise noted.
- Continuous (TC = 70°C)
dv/dt
PD
D
- Pulsed
(Note 1)
FQT3P20TF
-200
Unit
V
-0.67
A
-0.53
A
-2.7
A
± 30
V
(Note 2)
150
mJ
Avalanche Current
(Note 1)
-0.67
A
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
0.25
-5.5
2.5
0.02
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
FQT3P20TF
50
Unit
°C/W
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
©2001 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
Publication Order Number:
FQT3P20/D
FQT3P20 — P-Channel QFET® MOSFET
FQT3P20
Device Marking
FQT3P20
Device
FQT3P20TF
Electrical Characteristics
Symbol
Package
SOT-223
Reel Size
13"
Tape Width
12 mm
Quantity
2500 units
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
-200
--
--
V
--
-0.18
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -200 V, VGS = 0 V
--
--
-1
µA
VDS = -160 V, TC = 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
-3.0
--
-5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -0.335 A
--
2.06
2.7
Ω
gFS
Forward Transconductance
VDS = -40 V, ID = -0.335 A
--
0.7
--
S
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
190
250
pF
--
45
60
pF
--
7.5
10
pF
--
8.5
25
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -100 V, ID = -2.8 A,
RG = 25 Ω
(Note 4)
VDS = -160 V, ID = -2.8 A,
VGS = -10 V
(Note 4)
--
35
80
ns
--
12
35
ns
--
25
60
ns
--
6.0
8.0
nC
--
1.7
--
nC
--
2.9
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-0.67
ISM
--
--
-2.7
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -0.67 A
Drain-Source Diode Forward Voltage
trr
Reverse Recovery Time
---
-100
-5.0
--
V
ns
Qrr
Reverse Recovery Charge
--
0.34
--
µC
VGS = 0 V, IS = -2.8 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 500mH, IAS = -0.67A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -2.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
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FQT3P20 — P-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
Top :
-ID, Drain Current [A]
0
10
-ID , Drain Current [A]
0
10
-1
10
150℃
25℃
-55℃
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = -40V
2. 250μ s Pulse Test
-1
-1
0
10
10
1
10
2
10
4
8
6
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
8
-IDR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
10
VGS = - 10V
6
VGS = - 20V
4
2
0
10
25℃
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
0
-1
0
2
4
6
8
10
0.2
0.4
0.6
-ID , Drain Current [A]
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
400
VDS = -40V
10
Capacitance [pF]
300
Ciss
Coss
200
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100
0
-1
10
-V GS , Gate-Source Voltage [V]
VDS = -100V
VDS = -160V
8
6
4
2
※ Note : ID = -2.8 A
0
0
10
1
10
0
1
2
3
4
6
7
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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FQT3P20 — P-Channel QFET® MOSFET
Typical Characteristics
(Continued)
2.5
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
-BV DSS , (Normalized)
Drain-Source Breakdown Voltage
1.2
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
0.9
0.8
-100
-50
0
50
100
150
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -0.335 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
0.8
1
10
Operation in This Area
is Limited by R DS(on)
-ID, Drain Current [A]
100 µs
0.6
-ID, Drain Current [A]
1 ms
10 ms
0
10
100 ms
0.4
DC
-1
10
0.2
※ Notes :
-2
10
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.0
25
-3
10
-1
10
0
1
10
2
10
10
50
75
Figure 9. Maximum Safe Operating Area
ZθJA(t), Thermal Response [oC/W]
100
125
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
※ N o te s :
1 . Z θJA( t ) = 5 0 ℃ /W M a x .
2 . Duty F a c to r , D = t 1 / t 2
3 . T J M - T A = P D M * Z θJA( t )
0 .2
1
0 .1
0 .0 5
10
0 .0 2
0
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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4
2
10
3
150
FQT3P20 — P-Channel QFET® MOSFET
Typical Characteristics
FQT3P20 — P-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
200nF
12V
VGS
Same Type
as DUT
50KΩ
Qg
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
IG = const.
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
t on
VDD
VGS
td(on)
VGS
t off
tr
td(off)
tf
10%
DUT
VGS
-10V
VDS
90%
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
tp
ID
RG
VGS
-10V
VDD
DUT
tp
VDD
VDS (t)
ID (t)
IAS
BVDSS
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5
Time
+
VDS
DUT
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
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VDD
FQT3P20 — P-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQT3P20 — P-Channel QFET® MOSFET
Mechanical Dimensions
SOT-223 4L
Figure 16. Molded Package, SOT-223, 4 Lead
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conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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