FQT4N25TF

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FQT4N25TF N-Channel QFET® MOSFET 250 V, 0.83 A, 1.75 Ω Features Description • 0.83 A, 250 V, RDS(on)=1.75 Ω(Max.)@VGS=10 V, ID=0.415 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary • Low Gate Charge (Typ. 4.3 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 4.8 pF) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D ! D " G! S G Absolute Maximum Ratings Symbol VDSS ID ! " " " SOT-223 ! S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQT4N25TF 250 Unit V 0.83 A - Continuous (TC = 70°C) 0.66 A 3.3 A IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 52 mJ IAR Avalanche Current (Note 1) 0.83 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 0.25 5.5 2.5 0.02 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient * Typ -- Max 50 Unit °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2 www.fairchildsemi.com FQT4N25TF N-Channel MOSFET December 2015 Part Number FQT4N25TF Top Mark FQT4N25 Electrical Characteristics Symbol Package SOT-223 Packing Method Tape and Reel Reel Size 13" Tape Width 12 mm Quantity 2500 units TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.22 -- V/°C VDS = 250 V, VGS = 0 V 1 µA IDSS Zero Gate Voltage Drain Current -- -- VDS = 200 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.415 A -- 1.38 1.75 Ω gFS Forward Transconductance VDS = 50 V, ID = 0.415 A -- 1.28 -- S -- 155 200 pF -- 35 45 pF -- 4.8 6.5 pF -- 6.8 25 ns -- 45 100 ns -- 6.4 25 ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125 V, ID = 3.6 A, RG = 25 Ω (Note 4, 5) VDS = 200 V, ID = 3.6 A, VGS = 10 V (Note 4, 5) -- 22 55 ns -- 4.3 5.6 nC -- 1.3 -- nC -- 2.1 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 0.83 ISM Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 0.83 A Drain-Source Diode Forward Voltage -- -- 3.3 A VSD -- -- 1.5 V trr Reverse Recovery Time -- 110 -- ns Qrr Reverse Recovery Charge -- 0.35 -- µC VGS = 0 V, IS = 3.6 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 120mH, IAS = 0.83A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 3.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2 www.fairchildsemi.com FQT4N25TF N-Channel MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID, Drain Current [A] 10 ID , Drain Current [A] Top : 0 10 150℃ 25℃ -55℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] 8 RDS(ON) [Ω ], Drain-Source On-Resistance 6 VGS = 10V VGS = 20V 4 2 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ -1 0 0 2 4 6 8 10 0.2 0.4 0.6 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 350 1.2 1.4 12 VDS = 50V 250 Ciss Coss 150 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 100 Crss 50 VGS, Gate-Source Voltage [V] 10 200 1.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 300 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 25℃ VDS = 125V VDS = 200V 8 6 4 2 ※ Note : ID = 3.6 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2 0 1 2 3 4 5 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQT4N25TF N-Channel MOSFET Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.415 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.0 Operation in This Area is Limited by R DS(on) 1 10 10 100 µs ID, Drain Current [A] ID, Drain Current [A] 0.8 1 ms 0 10 ms 0.6 100 ms DC -1 10 0.4 ※ Notes : -2 10 0.2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -3 10 -1 10 0 1 10 0.0 25 2 10 10 50 75 Figure 9. Maximum Safe Operating Area 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 ※ N o te s : 1 . Z θ J C( t ) = 5 0 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 1 0 .1 0 .0 5 10 0 .0 2 0 PDM 0 .0 1 θ JC (t), T h e rm a l R e s p o n s e 100 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] t1 Z s in g le p u ls e 10 t2 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2 www.fairchildsemi.com FQT4N25TF N-Channel MOSFET Typical Characteristics FQT4N25TF N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQT4N25TF N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2001 Fairchild Semiconductor Corporation FQT4N25TF Rev. 1.2 www.fairchildsemi.com 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10° 5° GAGE PLANE R0.15±0.05 R0.15±0.05 10° TYP 0° 0.25 SEATING PLANE 10° 5° 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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