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FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
FQD2N90 / FQU2N90
N-Channel QFET® MOSFET
900 V, 1.7 A, 7.2 Ω
Features
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
• 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V,
ID = 0.85 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
I-PAK
D-PAK
G
Absolute Maximum Ratings T
Symbol
*
4
D
G
S
o
C
S
= 25 C unless otherwise noted.
FQD2N90TM
FQU2N90TU-WS
FQU2N90TU-AM002
())
Parameter
*
0,-261
%&
0,%))61
Unit
*
'
% )7
'
97
'
4
*
: *
±;)
*
<
8'!
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=
4
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8
0
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=
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22B%2)
A
A56
6
;))
6
!5
8
8
8
0,-261
"!-26
+
C
%57
2
Thermal Characteristics
Symbol
RJC
RJA
FQD2N90TM
FQU2N90TU-WS
FQU2N90TU-AM002
Parameter
Unit
2.5
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
2
Thermal Resistance, Junction to Ambient (*1 in pad of 2 oz copper), Max.
© 2017 Semiconductor Components Industries, LLC
August-2017, Rev. 2
110
oC/W
50
Publication Order Number:
FQD2N90/D
1
Part Number
FQD2N90TM
FQU2N90TU-WS
FQU2N90TU-AM002
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
FQU2N90S
I-PAK
Tube
N/A
N/A
75 units
FQU2N90
I-PAK
Tube
N/A
N/A
75 units
Electrical Characteristics T
Package
D-PAK
Top Mark
FQD2N90
o
C
= 25 C unless otherwise noted.
())
*
D*
D >
*
*,)*4,-2)µ'
∆D*
5∆
D >
*
4,-2)µ'+
-26
%)
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4
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*
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1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 111 mH, IAS = 1.7 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25oC
3. ISD ≤ 2.2 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature
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2
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
'
% #&
Ω
!" #
"
#$%
!
!
"
#$
!" #
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3
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
!
$
!
"
#%$
#
% &
- .!
#$
/
#$
µ µ
!
"#!
( )*$$"&+
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ZJC(t), Thermal Response [oC/W]
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4
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
!
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
Time
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
DUT
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
Mechanical Dimensions
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7
FQD2N90 / FQU2N90 — N-Channel QFET® MOSFET
Mechanical Dimensions
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON
Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising
out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or
authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or
any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer
shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to
all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
8