FS8K

8 A Standard Recovery Surface Mount Rectifiers FS8G - FS8M Description The FS8G to FS8M series offers breakthrough size and performance. It sinks 8 A DC forward current and provides up to 230 A surge current capability with only 0.37 mA reverse leakage current. All this capability is packed into a small, flat−lead, TO−277 package, optimized for space−constrained applications. www.onsemi.com Anode 1 3 Cathode Features • • • • • • • • Anode 2 Rectifier Very High forward Surge Capability: IFSM = 230 A Low Leakage Current: 0.37 mA at TA = 25°C Very Low Profile: Typical Height of 1.1 mm Glass Passivated Junction HBM (JEDEC A114) > 8 KV; CDM (JEDEC C101C) > 2 KV Green Molding Compound as per IEC61249 Standard With DAP Option Only These Devices are Pb−Free, Halogen Free Free and are RoHS Compliant 3 2 1 TO−277−3LD CASE 340BQ MARKING DIAGRAM Applications • General−Purpose Applications • Reverse Polarity Protection • Rectifications $Y&Z&3 * $Y &Z &3 * = ON Semiconductor Logo = Assembly Plant Code = Date Code (Year & Week) = Specific Device Code FS8G, FS8J, FS8K, FS8M ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2015 April, 2020 − Rev. 5 1 Publication Order Number: FS8M/D FS8G − FS8M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Value Symbol Rating FS8G FS8J FS8K FS8M Unit 600 800 1000 V VRRM Maximum Repetitive Peak Reverse Voltage 400 VRMS Maximum RMS Reverse Voltage 280 420 560 700 V VDC DC Blocking Voltage 400 600 800 1000 V IF(AV) Maximum Average Rectified Forward Current IFSM Peak Forward Surge Current: 8.3 ms Single Half Sine−Wave Superimposed on Rated Load TJ TSTG 8 A 230 A Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 1) Symbol Characteristic Minimum Land Pattern Maximum Land Pattern Unit RqJA Junction−to−Ambient Thermal Resistance 100 40 °C/W ΨJL Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Anode 20 12 °C/W Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Cathode 6 5 1. The thermal resistances (RqJA & ΨJL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F S F S F S F S Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol VF Parameter Forward Voltage Conditions IF = 8 A Min Typ Max Unit − 0.951 1.1 V 5 mA IF = 8 A, TA = 125°C IR DC Reverse Current 0.845 − VR = VDC VR = VDC, TA = 125°C 0.37 84 Trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A 3.37 ms CJ Junction Capacitance VR = 0 V, f = 1 MHz 118 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FS8G − FS8M ORDERING INFORMATION Part Number Top Mark Package Shipping† FS8G FS8G TO−277 3L (No DAP Option) (Pb−Free/Halogen Free) 5000 / Tape & Reel FS8J FS8J TO−277 3L (No DAP Option) (Pb−Free/Halogen Free) 5000 / Tape & Reel FS8K FS8K TO−277 3L (No DAP Option) (Pb−Free/Halogen Free) 5000 / Tape & Reel FS8M FS8M TO−277 3L (No DAP Option) (Pb−Free/Halogen Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 FS8G − FS8M TYPICAL PERFORMANCE CHARACTERISTICS 1000 TL (Cathode, Min. Pad) 8 CJ, Junction Capacitance (pF) IF, Average Forward Current (A) 9 7 6 5 TA (3 cm x 3 cm Pad) 4 3 TA (Min. Pad) 2 1 100 0 0 25 50 75 100 150 10 0.1 175 1 10 100 Ambient / Lead Temperature (5C) VR, Reverse Voltage (V) Figure 3. Forward Current Derating Curve Figure 4. Typical Junction Capacitance 1000 TA = 150°C TA = 75°C 100 TA = 125°C 10 TA = 75°C 1 0.1 10 IF, Forward Current (A) IR, Reverse Current (mA) 125 TA = 25°C 0.01 TA = 125°C TA = 150°C TA = 25°C TA = −55°C TA = −55°C 1E−3 0 1 0.5 100 200 300 400 500 600 700 800 900 1000 0.7 0.8 0.9 1.0 1.1 1.2 VR, Reverse Voltage (V) VF, Forward Voltage (V) Figure 5. Typical Reverse Characteristics Figure 6. Typical Forward Characteristics 300 10000 IFSM, Non−Repetitive Forward Surge Current (A) Peak Forward Surge Current (A) 0.6 250 200 150 100 50 0 1 10 1000 100 100 10 Number of Cycles 100 1000 10000 Tp, Square Waveform Pulse Duration (ms) NOTE: Figure 7. Maximum Non−Repetitive Peak Forward Surge Current Typical performance bases on a limited sample size, not guarantee rating. Figure 8. Typical Non−Repetitive Forward Surge Current www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−277−3LD CASE 340BQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13861G TO−277−3LD DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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