FSA1208BQX

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Features         Description Low On Capacitance: 6 pF Typical The FSA1208 is a low -pow er, eight-port, high-speed sw itch. This part is configured as a single-pole, singlethrow sw itch and is optimized for isolating a highspeed source, such as a DDR memory bus. The FSA1208 features an extremely low on capacitance (CON) of 6 pF Superior channel-to-channel crosstalk minimizes interference. Low On Resistance: 15 Ω Typical Low Pow er Consumption: 1 A Maximum 10 μA Maximum ICCT over an Expanded Voltage Range (V IN=2.3 V, V CC=4.3 V) Wide -3 dB Bandw idth: > 400 MHz The FSA1208 contains special circuitry on the A & B pins that allow s the device to w ithstand an over-voltage condition. This device is also designed to minimize current consumption even w hen the control voltage applied to the /OE pin is low er than the supply voltage (V CC). Applications include port isolation and sw itching in DDR memory modules, portable cell phones, PDAs, digital cameras, printers, and notebook computers. Packaged in Space-Saving 20-Lead MLP (2.5 x 4.5 mm) 7.5 kV ESD Rating; >16 kV Pow er/GND ESD Rating Low COFF Capacitance: 2.5 pF Typical Applications  DIMM DDR Memory Ordering Information Part Number Top Mark Operating Temperature Range FSA1208BQX F1208 -40 to +85°C Package 20-Lead, Quad, Molded Leadless Package (MLP), 2.5 x 4.5 mm DIMM 1A 2A 3A 4A 5A 6A 7A 8A FSA1208 OE VCC 1B 2B 3B 4B 5B 6B 7B 8B DIMM DIMM Slot Figure 1. Analog Sym bol © 2008 Semiconductor Components Industries, LLC October-2017, Rev. 2 Publication Order Number: FSA1208/D FSA1208 — Low-Power, Eight-Port, High-Speed Isolation Switch FSA1208 Low-Power, Eight-Port, High-Speed Isolation Switch 19 18 17 16 15 14 13 B1 12 20 11 1 10 2 3 4 5 6 7 8 B2 B3 B4 B5 B6 B7 B8 /OE NC VCC GND A1 9 A2 A3 A4 A5 A6 Figure 2. Pin Assignm ents for MLP (Top Through View ) Pin Definitions Pin # Name Description 20 /OE Sw itch Enable 2-9 A1-A8 A Side of Bus 12-19 B8-B1 B Side of Bus 11 NC No Connection 1 VCC Pow er 10 GND Ground Truth Table /OE Function HIGH Disconnect LOW A1-A8=B1-B8 www.onsemi.com 2 A7 A8 FSA1208 — Low-Power, Eight-Port, High-Speed Isolation Switch Pin Configurations Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol V CC Parameter Supply Voltage V CNTRL DC Input Voltage (/OE) (1) (1) V SW DC Sw itch I/O Voltage IIK DC Input Diode Current IOUT DC Output Current TSTG Storage Temperature Min. Max. Unit -0.50 +5.25 V -0.50 V CC V -0.50 5.25 -50 -65 All Pins Human Body Model, JEDEC: JESD22-A114 ESD V mA 50 mA +150 °C 7.5 I/O to GND 8 Pow er to GND 16 Charged Device Model, JEDEC: JESD22-C101 kV 2 Note: 1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol V CC TA Max. Unit 2.3 4.3 V 0 V CC V Sw itch I/O Voltage -0.5 V CC V Operating Temperature -40 +85 °C Supply Voltage (2) V CNTRL V SW Parameter Control Input Voltage (S, /OE) Note: 2. The control input must be held HIGH or LOW; it must not float. www.onsemi.com 3 Min. FSA1208 — Low-Power, Eight-Port, High-Speed Isolation Switch Absolute Maximum Ratings All typical values are at 25°C unless otherw ise specified. Symbol Parameter Conditions VCC (V) Min. Typ. Max. Clamp Diode Voltage V IH Input Voltage High V IL Input Voltage Low IIN Control Input Leakage V SW=0 to V CC 4.3 IOZ Off State Leakage 0 A, B 3.6 V 4.3 V SW=0 V, ION=-10 mA Figure 3 2.5 7  V SW=1.8 V, ION=-10 mA Figure 3 2.5 15  Sw itch On Resistance (3) 2.5 -1.2 Units V IK RON IIN=-18 mA TA=- 40ºC to +85ºC V 2.3 to 3.6 1.3 V 4.3 1.7 V 2.3 to 3.6 0.5 V 4.3 0.7 V -1 1 µA -2 2 µA ICC Quiescent Supply Current V IN=0 or V CC, IOUT=0 4.3 1 µA ICCT Increase in ICC Current Per Control Voltage and V CC V IN=1.8 V 2.7 10 µA Note: 3. Measured by the voltage drop betw een A and B pins at the indicated current through the sw itch. On resistance is determined by the low er of the voltage on the tw o (A or B ports). AC Electrical Characteristics All typical values are for V CC=2.5 V at 25°C unless otherw ise specified. Symbol Parameter Conditions VCC (V) TA=- 40ºC to +85ºC Min. Typ. Max. Units ton Turn-On Time, /OE to Output RL=50 Ω, CL=5 pF V SW=1.8 V Figure 4, Figure 5 2.3 to 3.6 15 34 ns tuff Turn-Off Time, /OE to Output RL=50 Ω, CL=5 pF V SW=1.8 V Figure 4, Figure 5 2.3 to 3.6 12 25 ns tad Propagation Delay RL=50 Ω, CL=5 pF Figure 4, Figure 6 3.3 0.35 ns (4) OIRR Off Isolation RL=50 Ω, f=400 MHz Figure 11 2.3 to 3.6 -40 dB Xtalk Non-Adjacent Channel Crosstalk RL=50 Ω, f=100 MHz Figure 12 2.3 to 3.6 -40 dB 1000 MHz 750 MHz BW -3dB Bandw idth RL=50 Ω, CL=0 pF Figure 10 RL=50 Ω, CL=5 pF Figure 10 Note: 4. Guaranteed by characterization. www.onsemi.com 4 2.3 to 3.6 FSA1208 — Low-Power, Eight-Port, High-Speed Isolation Switch DC Electrical Characteristics Symbol Parameter Conditions (5) tSK(O) Channel-to-Channel Skew tSK(P) Skew of Opposite Transitions (5) of the Same Output tSK(PKG) Package-to-Package Skew (5) VCC (V) TA=- 40ºC to +85ºC Min. Typ. Max. Units CL=5 pF 3.3 40 80 ps CL=5 pF 3.3 15 40 ps CL=5 pF 3.3 60 100 ps Note: 5. Guaranteed by characterization. Capacitance Symbol Parameter Conditions TA=- 40ºC to +85ºC Min. Typ. Max. CIN Control Pin Input Capacitance V CC=0.2 V, f=1 MHz 2.0 CON D+/D- On Capacitance V CC=2.5 V, /OE=0 V, f=1 MHz Figure 9 6.0 COFF D1n, D2n Off Capacitance V CC and /OE=2.5 V, f=1 MHz Figure 8 2.5 www.onsemi.com 5 Units pF FSA1208 — Low-Power, Eight-Port, High-Speed Isolation Switch High-Speed-Related AC Electrical Characteristics VON An Bn VSW GND ION /O E GND V Se l= 0 r Vc c = O / ION o N V Figure 3. On Resistance RO N An tRISE = 2.5ns Bn VSW CL GN D RS RL tFALL = 2.5ns VCC V OUT Input – V/OE , VSel GN D 10% GND V Sel 90% 90% VCC /2 VCC /2 10% VOH 90% GND 90% Output- VOUT RL , RS , and C L are func tion s of the appl ica tion e nvi ron ment ( s ee AC tabl es for spec ifi c val ues). CL i ncl udes test fix tur e and s tr ay c apac ita nce. Figure 4. AC Test Circuit Load VOL tON tOFF Figure 5. Turn-On / Turn-Off Waveform s tRISE = 500ps tFALL = 500ps +400mV 90% 0V - 400mV 10% 90% 10% Output t PHL Figure 6. Propagation Delay (t ry t o – 500ps) Figure 7. Intra-Pair Skew Test tSK(P) An Capacitance Meter /OE Capacitance Meter t PLH An /OE VS el = 0 o r Vc c B n V Sel = 0 or Vcc Bn Figure 8. Channel Off Capacitance Figure 9. Channel On Capacitance www.onsemi.com 6 FSA1208 — Low-Power, Eight-Port, High-Speed Isolation Switch Test Diagrams (Continued) Network Analyzer RS V IN VS GND GND VSel GND VOUT GND RT GND RS and RT are functions of the application environment (see AC Tables for specific values). Figure 10. Bandw idth Ne two rk Ana lyz r e RS VSel V IN GN D RT VS GND GND V OUT GND GND RT RS and RT a r functions of the app lication enviro nmen te (see A C tab les fo r sp ecific Values). GND Off isolation = 20 Log (VOUT/ V IN ) Figure 11. Channel Off Isolation Networ k An alyz r e R N C S GND V IN VS GND VSel GND RT GND GND RS and RT ar functio ns o f the ap plication e nviro nment (see AC tabele s for speci fi c valu es). RT VOUT GND Crosstalk = 20 L og (V OUT / VIN ) Figure 12. Non-Adjacent Channel-to-Channel Crosstalk www.onsemi.com 7 FSA1208 — Low-Power, Eight-Port, High-Speed Isolation Switch Test Diagrams FSA1208 — Low-Power, Eight-Port, High-Speed Isolation Switch Physical Dimensions Figure 13. 20-Lead, Molded Leadless Package (MLP) www.onsemi.com 8 FSA1208 — Low-Power, Eight-Port, High-Speed Isolation Switch ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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