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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FSA2567 — Low-Power, Dual SIM Card Analog Switch
Features
Description
The FSA2567 is a bi-directional, low-power, dual
double-pole, double-throw (4PDT) analog switch
targeted at dual SIM card multiplexing. It is optimized
for switching the WLAN-SIM data and control signals
and dedicates one channel as a supply-source switch.
Low On Capacitance for Data Path: 10 pF Typical
Low On Resistance for Data Path: 6 Ω Typical
Low On Resistance for Supply Path: 0.4 Ω Typical
Wide VCC Operating Range: 1.65 V to 4.3 V
Low Power Consumption: 1 μA Maximum
- 15 μA Maximum ICCT Over Expanded Voltage
Range (VIN=1.8 V, VCC=4.3 V)
Wide -3 db Bandwidth: > 160 MHz
Packaged in:
- Pb-free 16-Lead MLP & 16-Lead UMLP
3 kV ESD Rating, >12 kV Power/GND ESD Rating
Applications
Cell phone, PDA, Digital Camera, and Notebook
The FSA2567 is compatible with the requirements of
SIM cards and features a low on capacitance (CON) of
10 pF to ensure high-speed data transfer. The VSIM
switch path has a low RON characteristic to ensure
minimal voltage drop in the dual SIM card supply paths.
The FSA2567 contains special circuitry that minimizes
current consumption when the control voltage applied to
the SEL pin is lower than the supply voltage (V CC). This
feature is especially valuable in ultra-portable
applications, such as cell phones; allowing direct
interface with the general-purpose I/Os of the baseband
processor. Other applications include switching and
connector sharing in portable cell phones, PDAs, digital
cameras, printers, and notebook computers.
LCD Monitor, TV, and Set-Top Box
Ordering Information
Part Number
Top Mark
Operating
Temperature
Range
Package
FSA2567MPX
FSA2567
-40 to +85°C
16-Lead, Molded Leadless Package (MLP) Quad, JEDEC
MO-220, 3 mm Square
FSA2567UMX
GX
16-Lead, Quad, Ultrathin Molded Leadless Package
(UMLP), 1.8 x 2.6 mm
For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
1VSIM
2VSIM
VSIM
1RST
2RST
1CLK
2CLK
1DAT
2DAT
RST
CLK
DAT
Sel
Figure 1. Analog Symbol
© 2008 Fairchild Semiconductor Corporation
FSA2567 Rev. 1.13
www.fairchildsemi.com
FSA2567 — Low-Power, Dual SIM Card Analog Switch
February 2015
16
15
14 13
1DAT
1DAT
13
VCC
VCC
14
2V SIM
2V SIM
15
VSIM
VSIM
16
1V SIM 1
1VSIM
1
Sel
2
2RST
3
10 No Connect
RST
4
9
12 DAT
12 DAT
11 2DAT
2RST
3
10 No Connect
RST
4
9
1CLK
Figure 2. Pad Assignment MLP16
(Top Through View)
5
6
7
8
1RST
GND
2CLK
CLK
Figure 3. Pad Assignment UMLP16
(Top Through View)
Pin Definitions
Pin
Description
nDAT, nRST, nCLK
Multiplexed Data Source Inputs
nVSIM
Multiplexed SIM Supply Inputs
VSIM , DAT, RST, CLK
Sel
1CLK
8
CLK
7
2CLK
6
GND
1RST
5
Sel 2
11 2DAT
(Not connected to GND)
FSA2567 — Low-Power, Dual SIM Card Analog Switch
Pin Assignments
Common SIM Ports
Switch Select
Truth Table
Sel
Function
Logic LOW
1DAT = DAT, 1RST = RST, 1CLK = CLK, 1VSIM = VSIM
Logic HIGH
2DAT = DAT, 2RST = RST, 2CLK = CLK, 2VSIM = VSIM
© 2008 Fairchild Semiconductor Corporation
FSA2567 Rev. 1.13
www.fairchildsemi.com
2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device
reliability. The absolute maximum ratings are stress ratings only.
Symbol
VCC
Parameter
Supply Voltage
Min.
Max.
Unit
-0.5
+5.5
V
(1)
-0.5
VCC
V
(1)
-0.5
VCC + 0.3
V
VCNTRL
DC Input Voltage (Sel)
VSW
DC Switch I/O Voltage
IIK
DC Input Diode Current
-50
mA
ISIM
DC Output Current - VSIM
350
mA
IOUT
DC Output Current – DAT, CLK, RST
35
mA
TSTG
Storage Temperature
+150
°C
ESD
-65
All Pins
3
I/O to GND
12
Human Body Model, JEDEC: JESD22-A114
Charged Device Model, JEDEC: JESD22-C101
kV
2
Note:
1. The input and output negative ratings may be exceeded if the input and output diode current ratings are
observed.
FSA2567 — Low-Power, Dual SIM Card Analog Switch
Absolute Maximum Ratings
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
VCC
VCNTRL
Parameter
Supply Voltage
Control Input Voltage (Sel)
(2)
VSW
Switch I/O Voltage
ISIM
DC Output Current - VSIM
IOUT
DC Output Current – DAT, CLK, RST
TA
Operating Temperature
Min.
Max.
Unit
1.65
4.30
V
0
VCC
V
-0.5
VCC
V
150
mA
25
mA
+85
°C
-40
Note:
2. The control input must be held HIGH or LOW; it must not float.
© 2008 Fairchild Semiconductor Corporation
FSA2567 Rev. 1.13
www.fairchildsemi.com
3
All typical values are at 25°C, 3.3 V VCC unless otherwise specified.
Symbol
Parameter
VIK
Clamp Diode Voltage
VIH
Input Voltage High
VIL
IIN
Inc(off),
Ino(off),
ROND
RONV
Conditions
IIN = -18 mA
Control Input Leakage VSW = 0 to VCC
Data Path Switch On
(3)
Resistance
VSIM Switch
(3)
On Resistance
TA=- 40ºC to +85ºC
Min.
Typ.
2.7
Input Voltage Low
Off State Leakage
VCC (V)
-1.2
1.65 to 2.3
1.1
2.7 to 3.6
1.3
4.3
1.7
Units
Max.
V
V
1.65 to 2.3
0.4
2.7 to 3.6
0.5
4.3
0.7
V
4.3
-1
1
µA
nRST, nDAT, nCLK, nVSIM = 0.3 V
or 3.6 V
Figure 10
4.3
-60
60
nA
VSW = 0, 1.8 V, ION = -20 mA
Figure 9
1.8
VSW = 0, 2.3 V, ION = -20 mA
Figure 9
2.7
6.0
10.0
VSW = 0, 1.8V, ION = -100mA
Figure 9
1.8
0.5
0.7
VSW = 0, 2.3 V, ION = -100 mA
Figure 9
2.7
0.4
0.6
0.2
7.0
12.0
FSA2567 — Low-Power, Dual SIM Card Analog Switch
DC Electrical Characteristics
∆ROND
Data Path Delta
(4)
On Resistance
VSW = 0 V, ION = -20 mA
2.7
ICC
Quiescent Supply
Current
VCNTRL = 0 or VCC, IOUT = 0
4.3
Increase in ICC
Current Per Control
Voltage and VCC
VCNTRL = 2.6 V, VCC = 4.3 V
4.3
ICCT
VCNTRL = 1.8 V, VCC = 4.3 V
4.3
1.0
µA
5.0
10.0
µA
7.0
15.0
µA
Notes:
3. Measured by the voltage drop between nDAT, nRST, nCLK and relative common port pins at the indicated
current through the switch. On resistance is determined by the lower of the voltage on the relative ports.
4. Guaranteed by characterization.
© 2008 Fairchild Semiconductor Corporation
FSA2567 Rev. 1.13
www.fairchildsemi.com
4
All typical value are for VCC=3.3V at 25°C unless otherwise specified.
Symbol
tOND
tOFFD
tONV
tOFFV
Parameter
Conditions
65
95
ns
42
60
ns
30
50
ns
20
40
ns
55
80
ns
35
55
ns
35
50
2.7 to 3.6
22
40
CL = 35 pF, RL = 50 Ω
Figure 11, Figure 13
3.3
0.25
ns
RL = 50 Ω, CL = 35 pF
VSW1 = VSW2 = 1.5 V
Figure 15
2.7 to 3.6
3
18
ns
RL = 50 Ω, CL = 35 pF
VSW1 = VSW2 = 1.5 V
Figure 15
2.7 to 3.6
3
12
ns
Turn-Off Time
Sel to Output
(DAT,CLK,RST)
RL = 50 Ω, CL= 35 pF
VSW = 1.5 V
Figure 11, Figure 12
Turn-On Time
Sel to Output (VSIM)
RL = 50 Ω, CL = 35 pF
VSW = 1.5 V
Figure 11, Figure 12
Turn-Off Time
Sel to Output (VSIM)
RL = 50 Ω, CL = 35 pF
VSW = 1.5 V
Figure 11, Figure 12
(5)
Break-Before-Make
(DAT,CLK,RST)
(5)
tBBMD
Break-Before-Make
(VSIM)
(5)
tBBMV
1.8
Min.
Units
Max.
RL = 50 Ω, CL = 35 pF
VSW = 1.5 V
Figure 11, Figure 12
Propagation Delay
(DAT,CLK,RST)
TA=- 40°C to +85°C
Typ.
Turn-On Time
Sel to Output
(DAT,CLK,RST)
tPD
VCC (V)
(5)
2.7 to 3.6
1.8
(5)
2.7 to 3.6
1.8
(5)
2.7 to 3.6
1.8
(5)
ns
Q
Charge Injection
(DAT,CLK,RST)
CL = 50 pF, RGEN = 0 Ω,
VGEN = 0 V
2.7 to 3.6
10
pC
OIRR
Off Isolation
(DAT,CLK,RST)
RL = 50 Ω, f = 10 MHz
Figure 17
2.7 to 3.6
-60
dB
Xtalk
Non-Adjacent Channel
Crosstalk
(DAT,CLK,RST)
RL = 50 Ω, f = 10 MHz
Figure 18
2.7 to 3.6
-60
dB
BW
-3 db Bandwidth
(DAT,CLK,RST)
RL = 50 Ω, CL = 5 pF
Figure 16
2.7 to 3.6
475
MHz
FSA2567 — Low-Power, Dual SIM Card Analog Switch
AC Electrical Characteristics
Note:
5. Guaranteed by characterization.
© 2008 Fairchild Semiconductor Corporation
FSA2567 Rev. 1.13
www.fairchildsemi.com
5
Symbol
Parameter
Conditions
TA =- 40°C to +85°C
Min.
CIN
Control Pin Input Capacitance
(6)
Typ.
VCC = 0 V
1.5
VCC = 3.3 V, f = 1 MHz
Figure 20
10
12
VCC = 3.3 V, f = 1 MHz
Figure 20
110
150
COND
RST, CLK, DAT On Capacitance
CONV
VSIM On Capacitance
COFFD
RST, CLK, DAT Off Capacitance
VCC = 3.3 V, Figure 19
3
COFFV
VSIM Off Capacitance
VCC = 3.3 V, Figure 19
40
(6)
Note:
6. Guaranteed by characterization.
© 2008 Fairchild Semiconductor Corporation
FSA2567 Rev. 1.13
Units
Max.
pF
FSA2567 — Low-Power, Dual SIM Card Analog Switch
Capacitance
www.fairchildsemi.com
6
6.00
5.00
4.00
0.50
RON (Ohms)
RON (Ohms)
7.00
85°C
25°C
-40°C
3.00
2.00
-1.00
85°C
0.40
25°C
0.30
-40°C
0.20
0.10
0.00
0.00
1.00
2.00
3.00
-1.00
0.00
1.00
Figure 4. RON Data Path
Figure 5. RON VSIM
Frequency Response
0
Off Isolation (dB)
2.00
VIN, VCC = 2.7V
VIN, VCC = 2.7V
1
10
100
-10
-30
-50
-70
-90
-110
Frequency (MHz)
V CC = 2.7V
3.00
FSA2567 — Low-Power, Dual SIM Card Analog Switch
Typical Performance Characteristics
Figure 6. Off Isolation
Frequency Response
Crosstalk (dB)
0
1
10
100
-5
-15
-25
-35
-45
-55
-65
-75
-85
-95
-105
-115
-125
Frequency (MHz)
V CC = 2.7V
Figure 7. Crosstalk
Gain (dB)
Frequency Response
0
-1
-2
-3
-4
-5
-6
-7
-8
1
10
100
1000
10000
Frequency (MHz)
C L = 5pF, V CC = 2.7V
Figure 8. Bandwidth
© 2008 Fairchild Semiconductor Corporation
FSA2567 Rev. 1.13
www.fairchildsemi.com
7
VON
InA(OFF)
NC
nVSIM , nRST,
nCLK, or nDAT
A
VSIM , RST,
CLK, or DAT
VSW
VSW
I ON
GND
GND
GND
R ON = VON / I ON
V
Sel
VSel = 0 or VCC
Figure 9. On Resistance
= 0 or V
CC
Figure 10. Off Leakage
tFALL = 2.5ns
tRISE = 2.5ns
nVSIM, nRST,
nCLK,or nDAT
VSIM, RST,
CLK,or DAT
VCC
VSW
CL
GND
Sel
VOUT
RL
90%
Input – VSel
10%
GND
GND
90%
VCC /2
VCC /2
10%
VOH
90%
90%
RL and CL are functions of the application
environment (see tables for specific values).
C includes test fixture and stray capacitance.
L
Output - VOUT
VOL
Figure 11. AC Test Circuit Load
t ON
FSA2567 — Low-Power, Dual SIM Card Analog Switch
Test Diagrams
t OFF
Figure 12. Turn-On / Turn-Off Waveforms
tRISE= 2.5ns
tFALL= 2.5ns
VCC
Input - VSW
10%
GND
90%
90%
VCC /2
VCC /2
10%
VOH
Output - VOUT
VOL
50%
50%
tpLH
tpHL
Figure 13. Propagation Delay
Figure 14. Charge Injection
© 2008 Fairchild Semiconductor Corporation
FSA2567 Rev. 1.13
www.fairchildsemi.com
8
tRISE = 2.5ns
nVSIM, nRST,
nCLK or nDAT
VSIM ,RST,
CLK or DAT
VSW1
GND
VOUT
CL
VSW2
VCC
InputVSel 10%
0V
RL
VOUT
GND
GND
90%
VCC/2
0.9 • VOUT
0.9 • VOUT
tBBM
Sel
RL and C L are functions of the application
environment (see tables for specific values).
CL includes test fixture and stray capacitance.
Figure 15.
Break-Before-Make Interval Timing
Network Analyzer
RS
Network Analyzer
RS
VIN
VS
GND
GND
VSEL
GND
RS and RT are functions of the application
environment (see tables for specific values).
Figure 16.
VSel
VOUT
GND
GND
RT
GND
VOUT
GND
RS and RT are functions of the application
environment (see tables for specific values).
GND
VS
GND
GND
RT
VIN
RT
FSA2567 — Low-Power, Dual SIM Card Analog Switch
Test Diagrams (Continued)
GND
Off isolation = 20 Log (VOUT / VIN)
Bandwidth
Figure 17.
Channel Off Isolation
Network Analyzer
RS
NC
VIN
GND
VS
GND
VSel
GND
RT
GND
GND
RT
RS and RT are functions of the application
environment (see tables for specific values).
VOUT
GND
Crosstalk= 20 Log (VOUT / VIN)
Figure 18.
Non-Adjacent Channel-to-Channel Crosstalk
VSIM , RST,
CLK, or DAT
nVSIM, nRST,
nCLK, or nDAT
Capacitance
Meter
Capacitance
Meter
VSel = 0 or VCC
Figure 19.
nVSIM , nRST,
nCLK, or nDAT
Channel Off Capacitance
© 2008 Fairchild Semiconductor Corporation
FSA2567 Rev. 1.13
VSel = 0 or VCC
f = 1MHz
f = 1MHz
nVSIM, nRST,
nCLK, or nDAT
Figure 20.
Channel On Capacitance
www.fairchildsemi.com
9
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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