FSA642UMX

Features Description      The FSA642 is a bi-directional, low -pow er, high-speed analog sw itch. The pin out is designed to ease differential signal layout and is configured as a triplepole, double-throw sw itch (TPDT). The FSA642 is optimized for sw itching betw een tw o MIPI devices, such as cameras or LCD displays and on-board Multimedia Application Processors (MAP). Low On Capacitance: 7.0 pF Typical Low On Resistance: 7.0 Ω Typical Wide -3db Bandw idth: 1 GHz Typical 24-Lead UMLP (2.5 x 3.4 mm) Package 8 kV ESD Rating; >16 kV Pow er/GND ESD Rating Applications   Dual Camera Applications for Cell Phones Dual LCD Applications for Cell Phones, Digital Camera Displays, and View finders The FSA642 is compatible w ith the requirements of Mobile Industry Processor Interface (MIPI). The low capacitance design allow s the FSA642 to sw itch signals that exceed 500 MHz in frequency. Superior channel-tochannel crosstalk immunity minimizes interference and allow s the transmission of high-speed differential signals and single-ended signals, as described by the MIPI specification. Ordering Information Part Number Top Mark Operating Temperature Range FSA642UMX JG -40 to +85°C Camera 1 D Camera 2 C D D C FSA642 D Package 24-Lead, Quad, Ultrathin Molded Leadless Package (UMLP), 2.5 x 3.4 mm LCD 1 LCD 2 C D C FSA642 C D MAP Processor D D C MAP Processor Figure 1. Application Block Diagram © 2008 Semiconductor Components Industries, LLC. December-2017, Rev. 2 Publication Order Number: FSA642/D FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch FSA642 Low-Power, Three-Port, High-Speed MIPI Switch 15 14 13 CLKAN DA1P DA1N DA2P 20 16 CLKAP DB2P 17 DB2N 19 18 DA2N 12 DB1P SEL 11 21 DB1N VCC 10 22 CLKBP GND 9 23 CLKBN /OE 8 24 NC NC 7 CLKP CLKN D1P D1N D2P D2N 642 1 2 3 4 5 6 Figure 2. Pin Configuration (Top Through View ) Pin Definitions Pin # Name 1, 2 CLKP, CLKN Clock Path (Common) Description 3, 4 D1P, D1N Data Path 1 (Common) Data Path 2 (Common) 5, 6 D2P, D2N 7, 24 NC No Connect (Float) 8 /OE Output Enable (Active Low ) 9 GND Ground 10 VCC Pow er 11 SEL Select (0=A, 1=B) 12, 13 DA2N, DA2P Data Path (A2) 14, 15 DA1N, DA1P Data Path (A1) 16, 17 CLKAN, CLKAP Clock Path (A) 18, 19 DB2N, DB2P Data Path (2B) 20, 21 DB1P, DB1N Data Path (1B) 22, 23 CLKBP, CLKBN, Clock Path (B) www.onsemi.com 2 FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch Pin Configuration FSA642 CLKAP (17) CLKAN (16) (1) CLKP (2) CLKN DA1P (15) DA1N (14) DA2P (13) DA2N (12) (3) D1P (4) D1N CLKBP (22) CLKBN (23) DB1P (20) DB1N (21) (5) D2P (6) D2N DB2P (19) DB2N (18) (8) /OE (11) SEL Sw itch Control (10) V CC (9) GND Figure 3. Functional Diagram Truth Table SEL /OE Function Don’t Care HIGH Disconnect LOW LOW D1, D2, CLK=DA1, DA2, CLKA HIGH LOW D1, D2, CLK=DB1, DB2, CLKB www.onsemi.com 3 FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch Functional Diagram Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these lev els is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol V CC V CNTRL Parameter Supply Voltage DC Input Voltage (SEL, /OE) (1) V SW DC Sw itch I/O Voltage IIK DC Input Diode Current IOUT DC Output Current TSTG Storage Temperature ESD (1) Min. Max. Unit -0.50 +5.25 V -0.5 V CC V -0.5 V CC + 0.3 V -50 -65 Human Body Model, JEDEC: JESD22-A114 mA 50 mA +150 °C All Pins 6.5 I/O to GND 8.0 Pow er to GND 16.0 Charged Device Model, JEDEC: JESD22-C101 kV 2.5 Note: 1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol V CC V CNTRL V SW TA Parameter Min. Max. Unit 2.65 4.30 V 0 V CC V Sw itch I/O Voltage -0.5 V CC-1 V Operating Temperature -40 +85 °C Supply Voltage Control Input Voltage (SEL, /OE) (2) Note: 2. The control input must be held HIGH or LOW; it must not float. www.onsemi.com 4 FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch Absolute Maximum Ratings All typical values are TA=25°C unless otherw ise specified. Symbol Parameter Conditions TA=-40 to +85ºC VCC (V) V IK Clamp Diode Voltage IIN=-18 mA IIN Control Input Leakage V SW=0 to 4.3 V V IH Input Voltage High V IN=0 to V CC V IL Input Voltage Low V IN=0 to V CC IOZ Off-State Leakage A,B=0+0.3 V to V CC-0.3 4.3 ICC Quiescent Supply Current V CNTRL=0 or V CC, IOUT=0 ICCT Increase in ICC Current Per Control Voltage and V CC V CNTRL=1.8 V Min. Typ. Max. 2.775 4.3 -1 2.650 to 2.775 1.3 4.3 1.7 Units -1.2 V 1 µA V 2.650 to 2.775 0.5 V 2 µA 4.3 1.0 µA 2.775 1.5 µA -2 DC Electrical Characteristics, Low-Speed Mode All typical values are TA=25°C unless otherw ise specified. Symbol RON ∆RON Parameter LS Sw itch On Resistance LS Delta RON Conditions (3) (4) VCC (V) TA=-40 to +85ºC Min. Typ. Max. V SW=1.2 V, ION=-10 mA, Figure 4 2.65 10 V SW=1.2 V, ION=-10 mA (Intra-pair) 2.65 0.65 14 Units   Notes: 3. Measured by the voltage drop betw een A/B and CLK/Dn pins at the indicated current through the sw itch. 4. Guaranteed by characterization. DC Electrical Characteristics, High-Speed Mode All typical values are TA=25°C unless otherw ise specified. Symbol RON ∆RON Parameter HS Sw itch On Resistance HS Delta RON (6) Conditions (5) VCC (V) TA=-40 to +85ºC V SW=0.4 V, ION=-10 mA, Figure 4 2.65 7.0 V SW=0.4 V, ION=-10 mA (Intra-pair) 2.65 0.65 9.5 Notes: 5. Measured by the voltage drop betw een A, B, and Dn pins at the indicated current through the sw itch. 6. Guaranteed by characterization. www.onsemi.com 5 Units Min. Typ. Max.   FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch DC Electrical Characteristics All values are at RL=50Ω and RS=50Ω and all typical values are V CC=2.775V at TA=25°C unless otherw ise specified. Symbol Parameter Conditions (7) OIRR Off Isolation Xtalk Non-Adjacent Channel (7) Crosstalk BW -3 db Bandw idth tON Turn-On Time SEL, /OE to Output tOFF Turn-Off Time SEL, /OE to Output tPD Propagation Delay tBBM Break-Before-Make Time (7) (7) VCC (V) TA=-40ºC to +85ºC Min. Typ. Max. Units f=100 MHz, RT=50 Ω Figure 14 2.775 -35 dB f=100 MHz, RT=50 Ω Figure 15 2.775 -55 dB CL=0 pF, RT=50 Ω Figure 13 2.775 1.0 GHz CL=5 pF, V SW=1.2 V Figure 6, Figure 7 2.650 to 2.775 20 37 ns CL=5 pF, V SW=1.2 V Figure 6, Figure 7 2.650 to 2.775 15 27 ns CL=5 pF Figure 6, Figure 8 2.775 0.25 CL=5 pF, V SW1=V SW2=1.2 V Figure 12 2.650 to 2.775 3 5 ns 8 ns Note: 7. Guaranteed by characterization. AC Electrical Characteristics, High-Speed All typical values are V CC=2.775V at TA=25°C unless otherw ise specified. Symbol Parameter Conditions TA=-40ºC to +85ºC Min. Typ. Max. Units tSK(Part_Part) Channel-to-Channel Skew (8,9) Across Multiple Parts V SW=0.2 Vdiff PP, CL=5 pF 40 80 ps tSK(Chl_Chl) Channel-to-Channel Skew Within V SW=0.2 Vdiff PP, CL=5 pF, (8) a Single Part Figure 9 15 30 ps Skew of Opposite Transitions in (8) the Same Differential Channel 10 20 ps tSK(Pulse) V SW=0.2 Vdiff PP, CL=5 pF Notes: 8. Guaranteed by characterization. 9. Assumes the same V CC and temperature for all devices. Capacitance Symbol Parameter Conditions CIN Control Pin Input (10) Capacitance CON Dn/CLK- On Capacitance COFF Dn/CLK Off Capacitance TA=-40ºC to +85ºC Min. V CC=0 V (10) (10) V CC=2.775 V, /OE=0 V, f=1 MHz, at 25°C, Figure 11 V CC=2.775 V , /OE=2.775 V, f=1 MHz, Figure 10 Note: 10. Guaranteed by characterization. www.onsemi.com 6 Typ. Max. Units 1.5 6.0 7.0 2.5 9.0 pF FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch AC Electrical Characteristics VON I Dn(OFF) NC A DA/Bn VSW Dn VSW Select GND I ON Select RON = VON / ION V Sel = GND V Sel = GND 0 orV V cc 0 orV cc **Each switch port is tested separately Figure 4. On Resistance Figure 5. Off Leakage tRISE = 2.5ns DA B / n tFALL = 2.5ns Dn VSW CL GND RS RL VOUT VCC Input – V/OE , VSel GND 10% GND VSel 90% 90% VCC /2 VCC /2 10% VOH GN D 90% 90% Output- VOUT R L , RS, an C L ar f u c tions o f th a p lic ation env ironmednt (s e e ACn Ta bles forespe pific v lues) c ac itaanc e . C L inc lu es tes tefix ture an s t ra cap d d y . VOL tON tOFF Figure 6. AC Test Circuit Load Figure 7. Turn-On / Turn-Off Waveform s Figure 8. Propagation Delay (t Rt F – 500 ps) Figure 9. Channel-to-Channel Skew DA/Bn S Capacitance Meter Capacitance DA/Bn Meter VSEL =0 or VCC S VSEL =0 or VCC DA/Bn DA/Bn Figure 10. Channel Off Capacitance Figure 11. Channel On Capacitance www.onsemi.com 7 FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch Test Diagrams (Continued) tRI SE= 2.5ns Vcc HSDn Dn VSW1 GND 1 % 0 0V VOUT CL VSW2 RL V OUT GND GND 9 % V0 cc/ 2 I nput - VSe l 0.9*Vo RS 0. 9*Vo t u u VSel tBBM RL , RS , and C L ar functio ns o f the application envir onme nt (seee A C Tab les fo r sp ecific v l ues). CL includes test fixture a nd str a ca pacitaan ce. y GND Figure 12. Break-Before-Make Interval Tim ing Network Analyzer RS V IN VS GND GND VSel GND VOUT GND RT GND RS and RT are functions of the application environment (see AC Tables for specific values). Figure 13. Bandw idth Network Analyzer RS VSel V IN GND RT VS GND GND V OUT GND GND RT RS and RT are functions of the application environment (see AC Tables for specific values). GND Off isolation = 20 Log (V OUT / VIN) Figure 14. Channel Off Isolation Network Analyzer NC RS GND V IN VS VSel GND GND RT GND GND RS and RT are functions of the application environment (see AC Tables for specific values). RT V OUT GND Crosstalk = 20 Log (VOUT / VIN) Figure 15. Non-Adjacent Channel-to-Channel Crosstalk www.onsemi.com 8 t FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch Test Diagrams FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch Physical Dimensions Figure 16. 24-Lead UMLP Package Product-Specific Dimensions Description Nominal Values (mm) Description Nominal Values (mm) Overall Height PKG Standoff Lead Thickness Lead Width (24x) 0.500 0.026 0.152 0.200 Lead Length (23x) Lead Length, Pin 1 (1x) Lead Pitch Body Length (X) Body Width (Y) 0.4 0.5 0.4 3.4 2.5 www.onsemi.com 9 FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch Figure 17. Tape and Reel Packing Specification, page 1 www.onsemi.com 10 FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch Figure 18. Tape and Reel Packing Specification, page 2 www.onsemi.com 11 FSA642 — Low-Power, Three-Port, High-Speed MIPI Switch ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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