FSA660TMX

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FSA660—2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch Features   Description Switch Type: SPDT(3x) Signal Types: - MIPI, C-PHY             VCC: 1.5 to 5.0 V The FSA660 is a one-data-lane MIPI, C-PHY switch. This Single-Pole, Double-Throw (SPDT) switch is optimized for switching between two high-speed or lowpower MIPI sources. The FSA660 is designed for the MIPI specification and allows connection to a CSI or DSI module. Input Signals: 0 to 2.1 V RON: 5.4 Ω Typical Applications ΔRON: 0.1 Ω Typical     RON_FLAT: 0.9 Ω Typical ICCZ:1 µA Maximum ICC: 12 µA Typical Smart phones Tablets Laptops Displays OIRR : -28 dB Typical Bandwidth: 5G Hz Typical FSA660 MIPI Module#1 VCC IL: -1.0 dB Typical MANAGE MENT Xtalk: -44 dB Typical C-PHY Lane Module Processor A1 B1 C1 A B C CON: 0.8 pF Typical MANAGE MENT C-PHY Lane Module A2 B2 C2 C-PHY Lane Module MANAGE MENT /OE SEL GND MIPI Module#2 Figure 1. Typical Application Ordering Information Part Number Operating Temperature Range FSA660TMX -40 to +85°C © 2016 Fairchild Semiconductor Corporation FSA660 • Rev. 1.0 Package 18-Lead, Quad, Ultra-ultrathin Molded Leadless Package (TMLP), 2.0 mm x 2.8 mm x 0.375 mm Top Mark LS www.fairchildsemi.com FSA660 — 2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch September 2016 /OE A1 GND VCC A1 B1 16 15 A 18 A2 B1 B A 1 14 A2 B 2 13 B2 12 GND GND B2 17 GND 3 C 4 11 C1 NC 5 10 NC C1 C 7 8 9 /OE NC C2 6 C2 SEL SEL Figure 2. Analog Symbol Figure 3. Pin Assignment(Top Through View) Pin Definitions Pin Name Description A1 1-Side Data Path A B1 1-Side Data Path B C1 1-Side Data Path C A2 2-Side Data Path A B2 2-Side Data Path B C2 2-Side Data Path C A Common Data Path A B Common Data Path B C Common Data Path C /OE Output Enable SEL Control Pin SEL=0 A=A1,B=B1,C=C1 SEL=1 A=A2,B=B2,C=C2 Power VCC GND Ground NC No Connect Truth Table SEL /OE Function HIGH LOW A=A2,B=B2,C=C2 LOW LOW A=A1,B=B1,C=C1 X HIGH A,B,C Data Ports High Impedance © 2016 Fairchild Semiconductor Corporation FSA660 • Rev. 1.0 www.fairchildsemi.com 2 FSA660 — 2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch Pin Descriptions Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol VCC VCNTRL Parameter Supply Voltage DC Input Voltage (SEL, /OE) (1) (1,2) VSW DC Switch I/O Voltage IIK DC Input Diode Current Isw DC Switch Current Max. Unit -0.5 6.0 V -0.5 VCC V -0.3 2.1 -50 TSTG Storage Temperature MSL Moisture Sensitivity Level (JEDEC J-STD-020A) -65 Human Body Model, JEDEC: JESD22-A114 ESD Min. IEC 61000-2-4, Level 4, for Switch Pins V mA 25 mA +150 °C 1 All Pins 2 Contact 8 Air 15 Charged Device Model, JESD22-C101 kV 1 Notes: 1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed. 2. VSW refers to analog data switch paths. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol VCC VCNTRL VSW TA Parameter Min. Max. Unit 1.5 5.0 V 0 5.0 V HS Mode 0 0.54 LP Mode 0 1.3 -40 +85 Supply Voltage Control Input Voltage (SEL, /OE) (3) Switch I/O Voltage Operating Temperature V °C Note: 3. The control inputs must be held HIGH or LOW; they must not float. © 2016 Fairchild Semiconductor Corporation FSA660 • Rev. 1.0 www.fairchildsemi.com 3 FSA660 — 2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch Absolute Maximum Ratings All typical values are at TA=25°C unless otherwise specified. Symbol Parameter Condition VCC (V) TA= -40ºC to +85ºC Min. Typ. Max. Unit VIK Clamp Diode Voltage SEL, /OE IIN=-18 mA 1.5 IIK Clamp Diode Current (Switch Pins) VIN=-0.3 V 0 SEL, /OE 1.5 1.3 V VIH Control Input Voltage High SEL, /OE 3.6 1.4 V SEL, /OE 5.0 1.5 V SEL, /OE 1.5 0.4 V SEL, /OE 3.6 0.4 V SEL, /OE 5.0 0.4 V VIL Control Input Voltage Low -1.2 -0.6 V 18 µA IIN Control Input Leakage VSW= 0 to 2.0 V VCNTRL=0 to VCC 5.0 -500 500 nA IOZ Off-State Leakage for Open Data Paths VSW= 0.0 DATA 2.0 V 5.0 -500 500 nA ICL On-State Leakage for Closed (4) Data Paths VSW= 0.0 DATA 2.0 V 5.0 -500 500 nA IOFF Power-Off Leakage Current (All I/O Ports) VSW= 0.0 V to 2.0 V 0 -500 500 nA RON Switch On Resistance VSW= 0 V, ION=-8 mA 1.5 5.4 8.0  Difference in RON Between Positive-Negative VSW= 0 V, ION=-8 mA, 1.5 0.1  Flatness for RON VSW= 0 DATA 2.0 V, ION=-8 mA 1.5 0.9  ICC Quiescent Supply Current V/OE=0, VSEL=0 or VCC, IOUT=0 5.0 12 ICCZ Quiescent Supply Current (High Impedance) VSEL=X, V/OE= VCC, IOUT=0 5.0 ICCT Increase in Quiescent Supply Current VSEL=X, V/OE =1.5 V 5.0 ∆RON RONF_FLAT 5 30 µA 1 µA 15 µA Note: 4. For this test, the data switch is closed with the respective switch pin floating. © 2016 Fairchild Semiconductor Corporation FSA660 • Rev. 1.0 www.fairchildsemi.com 4 FSA660 — 2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch DC and Transient Characteristics All typical value are for VCC =3.6 V and TA=25°C unless otherwise specified. Symbol Parameter Condition VCC (V) TA= -40ºC to +85ºC Min. Typ. Max. Unit tON Turn-On Time, SEL to Output RL=50 Ω, CL=0 pF, VSW=0 V, VSW=0.6 V 1.5 to 5.0 V 350 600 ns tOFF Turn-Off Time, SEL to Output RL=50 Ω, CL=0 pF, VSW=0 V, VSW=3.3 V 1.5 to 5.0 V 125 300 ns tPD Propagation Delay CL=, CL=0 pF, RL=50 Ω, 1.5 to 5.0 V 0.25 tBBM Break-Before-Make RL=50 Ω, CL=0 pF, VSW1=0.6 V,VSW2= -0.6 V, 1.5 to 5.0 V tPEN Enable Time, /OE to Output RL=50 Ω, CL=0 pF, VSW=0.6 V 1.5 to 5.0 V tPDISEN Disable Time, /OE to Output RL=50 Ω, CL=0 pF, VSW=0.6 V (5) (5) OIRR Off Isolation Xtalk Channel Crosstalk IL (5) (5) Insertion Loss (5) (5) BW -3 db Bandwidth tSK(P) Skew of Transitions of the (5) Output CIN CON COFF Control Pin Input Capacitance (5) 100 ns 350 ns 60 150 µs 1.5 to 5.0 V 35 240 ns VS=0 dBm, R=50 Ω, f=2.5 GHz 3.6 V -28 dB VS=0 dBm, R=50 Ω, f=2.5 GHz 3.6 V -44 dB VS=0 dBm, f=2.5 GHz, RL=50 Ω, CL=0 pF 3.6V -1.0 dB VIN=1 Vpk-pk, RL=50 Ω, CL=0 pF (All Data Paths) 3.6 V 5 GHz RPU=50 to VCC, f=2.5 GHz, CL=0 pF 3.6 V 6 ps VCC=0 V, f=1 MHz 2.7 pF (5) VCC=3.3 V, f=2.5 GHz 0.8 pF (5) VCC=3.3 V, f=2.5 GHz 0.6 pF On Capacitance Off Capacitance Note: 5. Guaranteed by characterization and design. Not production tested. © 2016 Fairchild Semiconductor Corporation FSA660 • Rev. 1.0 www.fairchildsemi.com 5 FSA660 — 2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch AC Electrical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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