Features
USB Detection
Description
USB Battery Charging Rev. 1.2
Supports Data Contact Detect (DCD)
Dead Battery Provision (DBP)
w ith 30-Minute Timer
Isolation Sw itch Closes for
Charging Dow nstream Port (CDP)
Standard Dow nstream Port (SDP)
Sw itch Type
28V Over-Voltage Tolerance
-2V Under-Voltage Tolerance
V BUS
10-Lead MicroPak™
1.6 x 2.1mm, 0.5mm Pitch
Package
Ordering
Information
FSA831L10X
Applications
MP3, Mobile Internet Device (MID), Cell Phone, PDA,
Digital Camera, Notebook and Netbook
The FSA831 is a charger-detection IC w ith an integrated
isolation sw itch for use w ith a micro/mini USB port. The
FSA831 detects battery chargers and is compliant w ith USB
Battery Charging Specification, Rev 1.2 (BC1.2). The
algorithm incorporates Data Contact Detection (DCD), w hich
ensures that the shorter, inner pins of the USB connector are
making contact prior to continuing w ith battery charger
detection. The device determines if a Dedicated Charging
Port (DCP), Charging Dow nstream Port (CDP), or a typical
PC host, called a Standard Dow nstream Port (SDP), is
connected. If a charger is detected, the FSA831 determines
w hether the charger is a DCP or CDP. For SDP and CDP
detection, an internal isolation sw itch is closed to connect
the D+/D- lines of the USB cable to the resident USB
transceiver w ithin the portable device. The FSA831
conforms to all the constraints for the Dead Battery Provision
(DBP) w ithin the BC1.2 specification, including a 30-minute
timer that cannot exceed 45 minutes, per BC1.2.
Related Resources
Typical Application
CHG_AL_N
System on
Chip (SoC)
USB
PHY
GOOD_BAT
FSA831
Regulator
and Sw itch
OVT
Control
USB Port
V BUS
DM_HOST
DM_CON
DP_HOST
DP_CON
VBUS_IN
DD+
SW_OPEN
ID
Charger
Detect
GND
Li+
Bat
Charger
GND
CHG_DET
Figure 1. Mobile Phone Exam ple
© 2011 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
FSA831/D
FSA831 — USB2.0 High-Speed (480Mbps) Charger Detector with Isolation Switch
FSA831 — USB2.0 High-Speed (480Mbps) Charger
Detection with Isolation Switch
Pin Configurations
CHG_DET
10
9
VBUS
2
8
DM_CON
DP_HOST
3
7
DP_CON
CHG_AL_N
4
6
GND
SW_OPEN
1
DM_HOST
Control
5
GOOD_BAT
Figure 2.
Pin Assignm ents (Top View )
Pin Descriptions
Name
Pin #
Description
USB Interface
DP_HOST
3
D+ signal connected to the resident USB transceiver on the phone
DM_HOST
2
D- signal connected to the resident USB transceiver on the phone
V BUS
9
Input voltage supply pin to be connected to the V BUS pin of the USB connector
GND
6
Ground
DP_CON
7
Connected to the USB connector D+ pin
DM_CON
8
Connected to the USB connector D- pin
CHG_DET
10
CMOS push/pull output connected to charger IC for indicating if a charger has been detected
(LOW=charger not detected, HIGH=DCP or CDP charger has been detected).
SW_OPEN
1
Open-drain output pin; requires pull-up resistor to I/O voltage supply (LOW=sw itch closed,
Hi-Z=sw itch open).
CHG_AL_N
4
CMOS open-drain output pin (LOW=V BUS is valid and charge is allow ed to be draw n from V BUS,
Hi-Z=V BUS is not at a valid voltage).
5
Input that indicates if the battery is a good battery or a dead battery (LOW=dead battery,
HIGH=good battery).
Connector Interface
Status Outputs
Input Pin
GOOD_BAT
www.onsemi.com
2
Table 1. Functionality
Device Detected
GOOD_ SW_ CHG_ CHG_
DP_HOST DM_HOST DP_CON DM_CON
BAT OPEN AL_N DET
X
Hi-Z
LOW
HIGH
Hi-Z
Hi-Z
V DP_SRC
CDP
HIGH
LOW
LOW
HIGH
DP_CON
DM_CON
DP_HOST
DM_HOST
CDP
LOW
Hi-Z
LOW
HIGH
Hi-Z
Hi-Z
V DP_SRC
Hi-Z
(2)
HIGH
LOW
LOW
LOW
DP_CON
DM_CON
DP_HOST
DM_HOST
SDP
(2)
LOW
Hi-Z
LOW
LOW
Hi-Z
Hi-Z
V DP_SRC
Hi-Z
SDP, CDP, or DCP plugged in and
after 30-minute timer expires
LOW
Hi-Z
Hi-Z
LOW
Hi-Z
Hi-Z
Hi-Z
Hi-Z
V BUS < V BUS valid to
V BUS > V BUS valid operation prior to
completing detection of SDP,
CDP, or DCP. Upon detection, all
outputs sw itch as in row s above.
X
Hi-Z
Hi-Z
Hi-Z to
LOW
Hi-Z
Hi-Z
Hi-Z
Hi-Z
SDP
Hi-Z
(1)
DCP
Notes:
1. Hi-Z is the internal state of DM_CON. Since a DCP has been detected, DM_CON is shorted to DP_CON externally and
DM_CON is shorted to V DP_SRC.
2. Proprietary chargers that leave DP_CON and DM_CON floating are detected as SDP. Proprietary chargers that force
DP_CON=2V and DM_CON=2.7V (or any other voltages) can be detected as CDP, DCP or SDP depending on the
resistances of the resistor dividers on DP_CON and DM_CON used to create the voltages on those pins.
Functional Description
If a charger does not have a D+ pin on the USB connector
DP_CON and DM_CON pins to pass through the sw itch to
DP_HOST and DM_HOST, respectively. Since voltages on
the PS/2 port can go as high as the V BUS voltage, the
DP_HOST and DM_HOST pins can be pulled up to V BUS.
The USB PHY connected to DP_HOST and DM_HOST must
be equipped to handle these higher voltages.
If the D+ pin is not shorted to D- pin on the connector,
CHG_AL_N Output and Output Timing
If D+ is pulled up to a supply
CHG_AL_N output indicates that charge is allow ed to be
draw n from V BUS w hen CHG_AL_N is LOW. When FSA831
first pow ers up and prior to detection, the CHG_AL_N pin
can follow V BUS up to 28V, w hich is the absolute maximum
V BUS voltage allow ed. Whenever V BUS is at GND, the
FSA831 is completely off and the sw itches and all I/Os are in
the Hi-Z state. When V BUS climbs above the valid V BUS
threshold, detection occurs automatically and CHG_DET,
SW_OPEN, and CHG_AL_N all simultaneously sw itch to the
states indicated in Table 1 if GOOD_BAT is HIGH (see Dead
Battery Provision description for GOOD_BAT = LOW).
Data Contact Detect (DCD)
DCD relies on the D+ and D- lines being present. DCD w aits
until the internal timeout (450ms typical) has expired in the
follow ing cases:
If D+ does not have a sufficient path to ground to defeat a
pull-up IDP_SRC (10µA typical) current source.
The FSA831 proceeds w ith charger detection even though it
is unlikely a charger is present. If there is no charger, the
algorithm reports an SDP and closes the sw itch. If a device
is pulling D+ HIGH, this voltage presents itself to the USB
transceiver or Physical Layer Interface (PHY) block w ithin a
System on Chip (SoC) after the sw itch is closed
If the DCD timeout w as insufficient and the PHY block is so
equipped, DCD and the charging algorithm can be repeated
in the PHY block. The stipulation is that the total time from
V BUS valid to USB transceiver connection w ith a 1.5kΩ pullup to 3.3V must be one (1) second, per USB 2.0 standards
(USB 2.0 connect timing), provided the portable device does
not have a dead battery.
A typical PS/2 port (old PC mouse / keyboard port) has a
resistive pull-up to V BUS. This can cause the DCD to exceed
the maximum w ait time (tDCD_TIMEOUT) and proceed to charger
detection. The likely path through charger detection is
classifying the PS/2 port as an SDP port. This results in
closing the USB sw itches, w hich causes the voltage on the
Dead Battery Provision
BC1.2 and USB 2.0 allow a portable device (defined as a
device w ith a battery) w ith a dead battery to take a maximum
of 100mA from the USB V BUS line for a maximum of 45
minutes as long as the portable device forces the D+ line to
V DP_SRC (0.6V typical). FSA831 starts detection w hen V BUS
crosses the V BUSVLD threshold and, if it detects a CDP or
SDP and GOOD_BAT is HIGH, automatically closes the
sw itch and does not force the DP_CON pin to V DP_SRC.
Once the charger detection is completed, the FSA831 starts
a 30-minute timer and forces the DP_CON pin to V DP_SRC
until the timer elapses. During the 30 minute period, if
www.onsemi.com
3
GOOD_BAT is LOW, VDP_SRC is applied to DP_CON and
the D+/D- sw itches are opened, If GOOD_BAT is HIGH,
V DP_SRC is not applied to DP_CON and the D+/D- sw itches
are closed, If GOOD_BAT is LOW w hen 30 minute timer
expires; regardless of w hether an SDP, CDP, or DCP w as
previously detected; the FSA831 removes V DP_SRC from
DP_CON and forces CHG_DET LOW and CHG_AL_N to HiZ (SW_OPEN remains Hi-Z) To exit this fault condition,
remove V BUS, w ait for all the V BUS Printed Circuit Board
(PCB) capacitance to discharge, and re-apply V BUS. Table 1
provides the functionality of the pins w hen the timer expires.
When GOOD_BAT is HIGH and the battery is removed from
the portable device w hile V BUS is valid, bringing GOOD_BAT
LOW; the FSA831 opens the isolation sw itches on DP_CON
and DM_CON and forces the DP_CON pin to V DP_SRC. In this
scenario, the timer generally expires because the SoC does
not have a supply to bring GOOD_BAT HIGH unless the
battery that w as removed is re-inserted w ithin 30 minutes
from w hen the USB plug is inserted.
If an SDP or CDP is inserted w ith GOOD_BAT HIGH during
the 30-minute timer, then GOOD_BAT changes to LOW;
SW_OPEN changes to Hi-Z and the counter continues
counting until the 30 minutes expires. If GOOD_BAT then
returns to HIGH, SW_OPEN changes to LOW and finishes
out the 30-minute time.
SDP (depending on the resistances of the resistor dividers
on DP_CON and DM_CON) and used to create the HIGH
voltages on those pins. Any charger that lets both DP_CON
and DM_CON signals float is detected as an SDP and
CHG_DET stays de-asserted. In cases w here the proprietary
charger is detected as an SDP or CDP, since the sw itches
are closed and access is made from the USB connector D+
and D- lines to the USB PHY block; the chargers can be
detected w ithin the PHY if so equipped
Ground Drops
When a DCP is detected, V DP_SRC is forced on DP_CON
provided GOOD_BAT is HIGH or if GOOD_BAT is LOW and
the DBP timer has not expired. For current up to 1.5A
flow ing into the V BUS and GND lines of the USB cable, this
can translate to substantial ground drops that lift the ground
of the portable device. This drop adds to the voltage at the
DP_CON pin as seen from the DCP D+ pin. For the
maximum ground drop of 375mV specified in the BC1.2
specification and for the maximum V DP_SRC of 0.7V, the
voltage as seen by the DCP w ould be 1.075V. Smart DCPs
that rely on this voltage detection to determine attach and
detach detection need to take this into account.
VBUS Tolerance
When V BUS rises, an internal Pow er On Reset (POR) detects
this voltage and prepares the FSA831 for charger detection.
GOOD_BAT has an internal pull-dow n resistor to ensure it is
LOW w hen the SoC is pow ered dow n. This input is designed
to have very low thresholds to interface w ith low -voltage
SoCs driven w ith 1.2V supplies.
V BUS voltages up to 28V can be tolerated by the V BUS pin.
V BUS can tolerate voltages up to -2V for cases w here a
charger is plugged in backw ards.
Proprietary Chargers
Detection Flow
Only legitimate USB chargers that force VDM_SRC (0.6V
typical) on DM_CON w hen VDP_SRC is applied to DP_CON
are detected by the FSA831 and cause CHG_DET signal to
be asserted. Any charger that forces a HIGH on both
DP_CON and DM_CON can be detected as CDP, DCP, or
The flow diagram in Figure 3 show s how the FSA831
achieves battery charger detection consistent w ith BC1.2.
www.onsemi.com
3
Check
VBUS
Else
VBUS>VBUSVLD
Start Timer
Enable DCD
Else
D+ < VLGC for tDCD_DBNC
OR
tDCD_TIMEOUT
Primary detection
D+ = VDP_SRC,
Wait TVDPSRC_ON
D- > VDAT_REF
AND
D- < VLGC
•
( D- < VDAT_REF
OR
D- > VLGC)
•
•
•
Secondary Detection
D- = VDM_SRC,
Wait TVDMSRC_ON
D+ > VDAT_REF
AND < VLGC
•
If VBUS VLGC
D+ = VDP_SRC
DCP
IDCP
CDP
ICDP
CHG_AL_N=L,
CHG_DET=H
SW_OPEN=Hi-Z
SDP
IUNIT
CHG_AL_N=L,
CHG_DET=H
CHG_AL_N=L,
CHG_DET=L
GOOD_BAT=H
~tDBP
SW_OPEN=L,
Remove VDP_SRC on D+
GOOD_BAT=L
tDBP
~tDBP
SW_OPEN=Hi-Z
D+=VDP_SRC
GOOD_BAT=H
GOOD_BAT=L
~tDBP
tDBP
SW_OPEN=Hi-Z, CHG_AL_N=Hi-Z, CHG_DET=L,
Remove VDP_SRC on D+
Figure 3. Battery Charger Detection
www.onsemi.com
5
tDBP
Wait for VBUS <
VBUSVLD
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable
above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition,
extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute
maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
-2
28
V
V BUS
Voltage from USB Connector
V SW
USB Sw itch I/O Voltage (DP_CON, DM_CON, DP_HOST, DM_HOST)
-0.5
6.0
V
ISW
USB Sw itch Current (DP_CON to DP_HOST, DM_CON to DM_HOST)
-30
+30
mA
V I/O
Voltage from GOOD_BAT, CHG_AL_N, CHG_DET and SW_OPEN I/Os
-0.5
6.0
V
V CA
Voltage from CHG_AL_N Output
-0.5
28.0
V
II/O
CHG_AL_N, CHG_DET and SW_OPEN Outputs Sink/Source Current
-5
+5
mA
Storage Temperature Range
-65
+150
°C
TSTG
TJ
Maximum Junction Temperature
+150
°C
TL
Lead Temperature (Soldering, 10 Seconds)
+260
°C
IEC 61000-4-2 System
ESD
USB Pins (DP_CON, DM_CON, V BUS)
Air Gap
15
Contact
8
Human Body Model, JEDEC JESD22-A114
All Pins
6
Charged Device Model, JEDEC JESD22-C101
All Pins
2
kV
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating
conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameter
V BUS
V BUS Input HIGH Voltage
V SW
Sw itch I/O Voltage for USB Path
TA
Operating Temperature
www.onsemi.com
6
Min.
Max.
Unit
4
6
V
0
3.6
V
-40
+85
ºC
DC Electrical Characteristics
Unless otherw ise indicated, V BUS=4V to 6V and TA=-40 to +85°C. Typical values are at TA=25ºC unless otherw ise specified.
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Status Outputs
V OHCD
Output HIGH Voltage (CHG_DET)
IOH=-2mA
V OL
Output LOW Voltage (CHG_DET,
CHG_AL_N, SW_OPEN)
IOL=2mA
tDIFF
Skew Betw een Any Output (CHG_DET,
CHG_AL_N, SW_OPEN) Sw itching Relative to II/O=±2mA, CHG_AL_N=20kΩ to 5V,
SW_OPEN=10kΩ to 1.8V
the Other Outputs Sw itching
2.0
V
0.4
V
100
ns
4.0
V
V BUS Pin
VBUSVLD
IBUSIN
IVBUSACT
tOUT
(1)
V BUS Valid Detection Threshold
0.8
V BUS Input Leakage
V BUS=0V to 0.8V
10
µA
V BUS Active Mode Average Current
USB Path Active, USB Sw itch Closed
After Charger Detection
400
µA
Time from V BUS Valid Asserted to CHG_DET,
CHG_AL_N and SW_OPEN Outputs Valid
DP_CON pulled dow n to GND, 15kΩ,
all voltages forced on V BUS, DP_CON,
DM_CON and GND simultaneously
250
ms
Pow er Off Leakage Current
USB Path V BUS=0V, V SW=0V or 3.6V,
Figure 5
10
µA
High-Speed USB Range Sw itch On
(1)
Resistance
V DP_CON / V DM_CON=0V, 0.4V;
ION=8mA; Figure 4; V BUS=4V to 6V
9.0
Ω
0.5
V
Sw itch Characteristics
IOFF
RONUSB
6.5
Control Input
V IH
Input HIGH Voltage (GOOD_BAT)
V IL
Input LOW Voltage (GOOD_BAT)
1.1
V
MΩ
RPD
Pull Dow n Resistance (GOOD_BAT)
IIN
Input Leakage Current (GOOD_BAT)
V BUS=5V, GOOD_BAT=0V to 4.4V
1
10
µA
IIOFF
OFF State Leakage Current (GOOD_BAT)
V BUS=0V, GOOD_BAT=0V to 4.4V
10
µA
tDBP
Dead Battery Provision (DBP) Timer
45
min
tGB
Time from GOOD_BAT Asserted to SW_OPEN De-Asserted, Sw itches Closed and
Meet the RONUSB Specification
30
ms
tDB
Time from GOOD_BAT De-asserted to SW_OPEN Asserted, Sw itches Opened
65
ms
15
30
Battery Charger Detection Param eters from BC1.2 Specification
V DAT_REF
Data Detect Voltage
V DM_SRC
D- Source Voltage
V DP_SRC
D+ Source Voltage
0.5
0.7
V
V LGC
Logic Threshold
0.8
2.0
V
IDM_SINK
D- Sink Current
25
175
µA
IDP_SINK
D+ Sink Current
25
175
µA
IDP_SRC
Data Contact Detect Current Source
7
13
µA
(2)
(2)
0.25
0.40
V
0.5
0.7
V
tDCD_DBNC Data Contact Detect Debounce
10
tDCD_TOUT Time for DCD to Timeout
300
ms
tVDPSRC_ON D+ Voltage Source On Time
40
ms
tVDMSRC_ON D- Voltage Source On Time
40
ms
450
900
ms
Notes:
1. Guaranteed by characterization; not production tested.
2. The voltage source, V DP_SRC / V DM_SRC, is able to source at least 250µA w hen the output voltage is in the specified range.
This voltage source should not pull DP_CON / DM_CON below 2.2V w hen DP_CON / DM_CON is pulled to a voltage of
3.0V minimum or 3.6V maximum w ith a resistance of 900Ω minimum or 1575Ω maximum.
www.onsemi.com
7
AC Electrical Characteristics
Unless otherw ise specified, values are at TA=-40 to +85°C; all typical values are for V CC=3.3V at TA=25°C.
Symbol
Parameter
Condition
Min. Typ. Max. Unit Figure
Xtalk
Active Channel Crosstalk, DP_CON to
(3)
DM_CON
f=1MHz, RT=50Ω, CL=0pF
-78
f=240MHz, RT=50Ω, CL=0pF
-36
Off Isolation Rejection Ratio,
DM_HOST to DM_CON, DP_HOST to
(3)
DP_CON
f=1MHz, RT=50Ω, CL=0pF
-84
OIRR
f=240MHz, RT=50Ω, CL=0pF
-34
dB
Figure 7
dB
Figure 6
Note:
3. Guaranteed by characterization; not production tested.
Capacitance
Unless otherw ise specified, values are at TA=-40 to +85°C.
Symbol
COFF
CON
Parameter
Typical
Unit
Figure
(4)
V BIAS=0.2V, f=1MHz
Condition
3.9
pF
Figure 8
(4)
V BIAS=0.2V, f=1MHz
7.2
pF
Figure 9
DP_CON, DM_CON Off Capacitance
DP_CON, DM_CON On Capacitance
Note:
4. Guaranteed by characterization; not production tested.
www.onsemi.com
8
Test Diagrams
VON
I A(OFF)
NC
nBn
A
nA
V IN
V IN
I ON
GND
Select
V Sel =
RON = VON / ION
Select
GND
GND
VSel =
0 or Vcc
0 orVcc
**Each switch port is tested separately.
Figure 4. On Resistance
Figure 5. Off Leakage
Network Analyzer
NC
RS
Network Analyzer
RS
VIN
VS1, S2, S3
VSel
GND
GND
GND
GND
RS and RT are functions of the application
environment (see AC/DC tables).
RT
GND
VOUT
GND
GND
GND
GND
RS and RT are functions of the application
environment (see AC tables for values).
Figure 6. Channel Off Isolation
Capacitance
Meter
nSn
VSel =
RT
GND
CROSSTALK = 20 Log (VOUT / VIN )
Figure 7. Active Channel Crosstalk
nBn
f = 1MHz
VOUT
RT
Off-Isolation
= 20 Log (VOUT / VIN )
-
Capacitance
Meter
VS
VS
GND
RT
GND
0 or Vcc
nBn
nSn
V Sel =
f = 1MHz
0 orV cc
nBn
nBn
Figure 8. Channel Off Capacitance
Figure 9. Channel On Capacitance
www.onsemi.com
9
Physical Dimensions
0.10 C
2.10
2X
A
1.62
B
KEEPOUT ZONE, NO TRACES
OR VIAS ALLOWED
(0.11)
0.56
1.12
1.60
PIN1 IDENT IS
2X LONGER THAN
OTHER LINES
0.10 C
2X
TOP VIEW
(0.35) 10X
(0.25) 10X
0.50
RECOMMENDED LAND PATTERN
0.55 MAX
0.05 C
0.05 C
0.05
0.00
(0.20)
C
0.35
0.25
SIDE VIEW
(0.15)
D
0.65
0.55
DETAIL A
0.35
0.25
(0.36)
0.35
0.25
DETAIL A 2X SCALE
4
1
0.56
5
10
(0.29)
0.35 9X
0.25
6
9
0.50
0.25 9X
0.15
1.62
0.10
0.05
C A B
C
ALL FEATURES
BOTTOM VIEW
NOTES:
A. PACKAGE CONFORMS TO JEDEC
REGISTRATION MO-255, VARIATION UABD .
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.
D. PRESENCE OF CENTER PAD IS PACKAGE
SUPPLIER DEPENDENT. IF PRESENT IT
IS NOT INTENDED TO BE SOLDERED AND
HAS A BLACK OXIDE FINISH.
E. DRAWING FILENAME: MKT-MAC10Arev5.
Figure 10. 10-Lead, MicroPak™
Part Number
Top Mark
Operating Temperature Range
Package Description
Packing
Method
FSA831L10X
KY
-40 to 85°C
10-Lead, MicroPak™ 1.6 x 2.1mm,
0.5mm Pitch
Tape & Reel
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any
manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
10
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
❖
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com