FSB50450AS

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 产品特性 相关资料 • 通过 UL 第 E209204 号认证 (UL1557) • RD-FSB50450A - Motion SPM 5 系列参考设计版本 2 • 500 V RDS(on) = 2.4 W （最大值） FRFET MOSFET  三相逆变模块，带有栅极驱动器和保护功能 • AN-9082 - Motion SPM5 Series Thermal Performance by Contact Pressure • 内置自举二极管以简化印刷电路板布局 • AN-9080 - User’s Guide for Motion SPM 5 Series V2 • 低侧 MOSFET 的三个开源引脚用于三相电流感测 概述 • 高电平有效接口，可用于 3.3 / 5 V 逻辑电平，施密 特触发脉冲输入 FSB50450A/AS/AT 是一款先进的 Motion SPM® 5 模块， 为交流感应、无刷直流电机和 PMSM 电机提供非常全面 的 高 性 能 逆 变 输 出 级。这 些 模 块 集 成 了 优 化 的 内 置 MOSFET（FRFET® 技术）的栅极驱动以最小化电磁干扰 和能量损耗，同时也提供多重模组保护特性，包括欠压闭 锁和热监测。内置的高速 HVIC 只需要一个单电源电压， 将逻辑电平栅极输入转化为适合驱动模块内部 MOSFET 的高电压、高电流驱动信号。独立的开源 MOSFET 端子 在每个相位均有效，可支持大量不同种类的控制算法。 • 针对低电磁干扰进行优化 • 内置于 HVIC 的温度感测 • 用于栅极驱动和欠压保护的 HVIC • 绝缘等级：1500 Vrms/ 分 • 湿度敏感等级 (MSL) 3 • 符合 RoHS 标准 应用 • 小功率交流电机驱动器的三相逆变器驱动 FSB50450A FSB50450AS FSB50450AT 封装标识与定购信息 器件封装 器件 封装 卷盘大小 包装类型 数量 FSB50450A FSB50450A SPM5P-023 不适用 Rail 15 FSB50450AS FSB50450AS SPM5Q-023 330mm 卷带和卷盘 450 FSB50450AT FSB50450AT SPM5N-023 NA Rail 15 ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 1 www.fairchildsemi.com FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 8 2016 逆变部分 （单个 MOSFET，除非另有说明。） 符号 VDSS *ID 25 *ID 80 *IDP *IDRMS *PD 参数 工作条件 额定值 单位 500 V 单个 MOSFET 的漏极持续电流 TC = 25°C 1.5 A 单个 MOSFET 的漏极持续电流 TC = 80°C 1.1 A 单个 MOSFET 的漏极峰值电流 TC = 25°C, PW < 100 s 3.9 A 单个 MOSFET 的漏极电流有效值 TC = 80°C, FPWM < 20 kHz 0.8 Arms 最大功耗 TC = 25°C, For Each MOSFET 14 W 额定值 单位 单个 MOSFET 的漏极 - 源极电压 控制部分 （单个 HVIC，除非另有说明。） 符号 VCC VBS VIN 参数 工作条件 施加在 VCC 和 COM 之间 20 V 高侧偏压 施加在 VB 和 VS 之间 20 V 输入信号电压 施加在 VIN 和 COM 之间 -0.3 ~ VCC + 0.3 V 额定值 单位 500 V 控制电源电压 自举二极管部分 （单个自举二极管，除非另有说明。） 符号 VRRMB 参数 工作条件 最大重复反向电压 * IFB 正向电流 TC = 25°C 0.5 A * IFPB 正向电流 （峰值） TC = 25°C，脉冲宽度小于 1 ms 1.5 A 额定值 单位 8.9 °C/W 热阻 符号 RqJC 参数 工作条件 逆变工作条件下的单个 MOSFET （注 1） 结点 - 壳体的热阻 整个系统 符号 额定值 单位 工作结温 -40 ~ 150 °C TSTG 存储温度 -40 ~ 125 °C VISO 隔离电压 1500 Vrms TJ 参数 工作条件 60 Hz，正弦波形， 1 分钟，连接陶 瓷基板到引脚 注： 1. 关于壳体温度 TC 的测量点，参见图 4。 2. 标记为 “ * ” 的为计算值或设计因数。 ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 2 www.fairchildsemi.com FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 绝对最大额定值 FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 引脚描述 引脚号 引脚名 引脚描述 1 COM IC 公共电源接地 2 VB(U) U 相高端侧 MOSFET 驱动的偏压 3 VCC(U) U 相 IC 和低侧 MOSFET 驱动的偏压 4 IN(UH) U 相高侧的信号输入 5 IN(UL) U 相低侧的信号输入 6 N.C 无连接 7 VB(V) V 相高侧 MOSFET 驱动的偏压 8 VCC(V) V 相 IC 和 低侧 MOSFET 驱动的偏压 9 IN(VH) V 相高侧的信号输入 10 IN(VL) V 相低侧的信号输入 11 VTS HVIC 温度感测输出 12 VB(W) 13 VCC(W) W 相 IC 和低侧 MOSFET 驱动的偏压 14 IN(WH) W 相高侧的信号输入 15 IN(WL) W 相低侧的信号输入 16 N.C 17 P 18 U, VS(U) 19 NU U 相的直流输入负端 20 NV V 相的直流输入负端 21 V, VS(V) 22 NW 23 W, VS(W) W 相高侧 MOSFET 驱动的偏压 无连接 直流输入正端 高侧 MOSFET 驱动的 U 相偏压接地输出 高端 MOSFET 驱动的 V 相偏压接地输出 W 相的直流输入负端 高侧 MOSFET 驱动的 W 相偏压接地输出 (1) COM (2) VB(U) (17) P (3) V CC(U) VCC VB (4) IN (UH) HIN HO (5) IN (UL) LIN VS COM LO (18) U, V S(U) (6) N.C (19) N U (7) VB(V) (8) V CC(V) VCC VB (9) IN (VH) HIN HO (10) IN (VL) LIN VS COM LO (11) V TS (20) N V (21) V, V S(V) V TS (12) V B(W) (13) V CC(W) VCC VB (14) IN (WH) HIN HO LIN VS COM LO (15) IN (WL) (22) N W (23) W, V S(W) (16) N.C 图 1. 引脚布局和内部框图 （仰视图） 注： 3. 每个低侧 MOSFET 的源极端子与 Motion SPM® 5 中的电源接地或偏压接地不连接。外部连接应当如图 3 所示。 ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 3 www.fairchildsemi.com 逆变器部分 （单个 MOSFET，除非另有说明。） 符号 参数 工作条件 BVDSS 漏极 - 源极 击穿电压 VIN = 0 V、 ID = 1 mA （第二个注 1） IDSS 零栅极电压 漏极电流 最小值 典型值 最大值 单位 500 - - V VIN = 0 V, VDS = 500 V - - 1 mA 漏极至源极静态 导通电阻 VCC = VBS = 15 V, VIN = 5 V, ID = 1.0 A - 1.9 2.4  漏极－源极二极管 正向电压 VCC = VBS = 15V, VIN = 0 V, ID = -1.0 A - - 1.2 V tON - 1250 - ns tOFF - 680 - ns - 200 - ns - 60 - J - 10 - J RDS(on) VSD trr VPN = 300 V, VCC = VBS = 15 V, ID = 1.0 A VIN = 0 V  5 V、电感负载 L = 3 mH 高侧和低侧 MOSFET 开关 （注 2） 开关时间 EON EOFF RBSOA 反向偏压安全工作区 VPN = 400 V, VCC = VBS = 15 V, ID = IDP, VDS = BVDSS, TJ = 150°C 高侧和低侧 MOSFET 开关 （注 3） 整个区域 控制部分 （单个 HVIC，除非另有说明。） 符号 参数 工作条件 最小值 典型值 最大值 单位 IQCC VCC 静态电流 VCC = 15 V, VIN = 0 V IQBS VBS 静态电流 VBS = 15 V, VIN = 0 V 施加在 VB(U)- U 之间 VB(V) - V, VB(W) - W - - 100 A IPCC VCC 工作电源电流 VCC - COM VCC = 15 V、 fPWM = 20 kHz、 占空比 = 50%，施加于低端的一个 PWM 信号输入 - - 800  IPBS VBS 工作电源电流 VB(U) - VS(U),  VCC = VBS = 15 V、 VB(V) - VS(V), fPWM = 20 kHz、占空比 = 50%， VB(W) - VS(W) 施加于高端的一个 PWM 信号输入 - - 700  7.4 8.0 9.4 V UVCCD UVCCR UVBSD UVBSR 低侧欠压 保护 （图 8） 高侧欠压 保护 （图 9） 施加在 VCC 和 COM 之间 - - 200 A VCC 欠压保护检测电平 VCC 欠压保护复位电平 8.0 8.9 9.8 V VBS 欠压保护检测电平 7.4 8.0 9.4 V VBS 欠压保护复位电平 8.0 8.9 9.8 V 600 790 980 mV - - 2.9 V 0.8 - - V VTS HVIC Temperature Sensing Voltage Output VCC = 15 V、 THVIC = 25°C （第二个注 4） VIH 导通阈值电压 逻辑高电平 VIL 关断阈值电压 逻辑低电平 施加在 VIN 和 COM 之间 自举二极管部分 （单个自举二极管，除非另有说明。） 符号 参数 工作条件 最小值 典型值 最大值 单位 VFB 正向电压 IF = 0.1 A、 TC = 25°C （第二个注 5） - 2.5 - V trrB 反向恢复时间 IF = 0.1 A, TC = 25°C - 80 - ns ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 4 www.fairchildsemi.com FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 电气特性 （TJ = 25°C、 VCC = VBS = 15 V，除非另有说明。） 符号 参数 工作条件 最小值 典型值 最大值 单位 VPN 电源电压 施加在 P 和 N 之间 VCC 控制电源电压 施加在 VCC 和 COM 之间 13.5 15.0 16.5 V 施加在 VB 和 VS 之间 13.5 15.0 16.5 V 3.0 - VCC V 0 - 0.6 V VBS VIN(ON) VIN(OFF) tdead fPWM 高端偏压 输入导通阈值电压 - 施加在 VIN 和 COM 之间 输入关断阈值电压 防止桥臂直通的死区时间 VCC = VBS = 13.5 ~ 16.5 V, TJ 150°C PWM 开关频率 TJ 150°C 300 400 V 1.0 - - s - 15 - kHz Built-In Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 VF [V] 13 14 15 TC = 25°C 图 2. 内置自举二极管特性 （典型值） 注： 1. BVDSS 是 Motion SPM® 5 产品中的单个 MOSFET 的漏极和源极端子之间的绝对最大额定电压。考虑到寄生电感，VPN 应远低于该值，因此 VPN 在任何情况下不得超过 BVDSS。 2. tON 和 tOFF 包括内部驱动 IC 的传输延迟。所列出的数值是在实验室测试条件下测得，在实际应用中因为印刷电路板和布线的差异，数值也会有所不同。请参阅图 6 介绍的开关 时间定义，以及图 7 中的开关测试电路。 3. 每个 MOSFET 在开关工作时的峰值电流和电压也应在安全工作区 （SOA）的范围内。请参阅图 7 中的 RBSOA 测试电路，它与开关测试电路相同。 4. Vts 只能用作模块的温度感测，但不能自动关闭 MOSFET。 5. 内置自举二极管其阻抗特性约为 15 Ω。请参阅图 2。 ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 5 www.fairchildsemi.com FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 推荐工作条件 C1 +15 V * Example Circuit : V phase VDC P MCU R5 C5 VCC VB HIN HO LIN VS COM LO V 10 F C2 C4 LIN Output Note 0 0 Z Both FRFET Off 0 1 0 Low side FRFET On C3 1 0 VDC High side FRFET On 1 1 Forbidden Shoot through Open Open Z Same as (0,0) R3 N VTS HIN Inverter Output ® One Leg Diagram of Motion SPM 5 Product * Example of Bootstrap Paramters : C1 = C2 = 1 F Ceramic Capacitor 图 3. 推荐的 MCU 接口和自举电路及其参数 注： 1. 自举电路元件的参数取决于 PWM 算法。上述为开关频率为 15 kHz 时的参数的典型例子。 2. RC 耦合 （R5, R5 和 C4）在 Motion SPM 5 产品和 MCU （虚线显示部分）的每个输入端都可用于防止由浪涌噪声产生的错误信号。 3. 印刷电路板图形中的粗线应尽量短且粗，以减少电路中的寄生电感，从而导致浪涌电压的降低。旁路电容如 C1、 C2 和 C3 应具有良好的高频特性，以吸收高频纹波电流。 图 4. 壳体温度测量 注： 4. 将热电耦贴在 SPM 5 封装 （如果应用到，放在 SPM 5 封装和散热片中间）的散热片的顶部，以获得正确的温度测量数值。 3.5 3.0 VTS [V] 2.5 2.0 1.5 1.0 0.5 20 40 60 80 100 120 140 160 o THVIC [ C] 图 5. VTS 温度曲线 （典型） ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 6 www.fairchildsemi.com FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 These values depend on PWM control algorithm FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 VIN VIN Irr VDS 120% of ID 100% of ID ID 10% of ID ID VDS tON trr tOFF (a) Turn-on (b) Turn-off 图 6. 开关时间定义 C BS VCC ID VCC VB HIN HO LIN VS COM LO L VDC + V DS - VTS ® One Leg Diagram of Motion SPM 5 Product 图 7. 开关和 RBSOA （单脉冲）测试电路 （低端） Input Signal UV Protection Status Low-side Supply, VCC RESET DETECTION RESET UVCCR UVCCD MOSFET Current 图 8. 欠压保护 （低侧） Input Signal UV Protection Status High-side Supply, VBS RESET DETECTION RESET UVBSR UVBSD MOSFET Current 图 9. 欠压保护 （高侧） ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 7 www.fairchildsemi.com (2 ) VB(U) (3 ) VCC(U) R5 (4 ) IN(UH) (5 ) IN(UL) C5 C2 (6 ) N.C (17) P VCC VB HIN HO LIN VS COM LO (18) U , VS(U) C3 (19) NU (7 ) VB(V) (8 ) VCC(V) (9 ) IN(VH) Micom (10) IN(VL) (11) VTS (12) VB(W) (13) VCC(W) (14) IN(WH) (15) IN(WL) (16) N.C VDC VCC VB HIN HO LIN VS COM LO (20) NV (21) V , VS(V) M VTS VCC VB HIN HO LIN VS COM LO (22) NW (23) W , VS(W) C4 For current-sensing and protection 15 V Supply R4 C6 R3 图 10. 应用电路实例 注： 1. 关于引脚的位置，请参阅图 1。 2. SPM® 5 产品和 MCU 的每个输入端的 RC 耦合 （R5 和 C5、 R4 和 C6）和 C4 都可用于防止由浪涌噪声产生的错误信号。 3. 由于位于 COM 和低侧 MOSFET 的源极端子之间， R3 的压降会影响低端的开关性能和自举特性。为此，稳态情况下 R3 的压降应小于 1 V。 4. 为避免浪涌电压和 HVIC 故障，接地线和输出端子之间的接线应短且粗。 5. 所有的滤波电容器应紧密连接到 Motion SPM 5 产品，它们应当具有能够很好的阻挡高频纹波电流的特性。 ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 8 www.fairchildsemi.com FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 C1 (1 ) COM FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 轮廓封装详图 (FSB50450A) 封装图纸作为一项服务，提供给考虑 Fairchild 元件的客户。具体参数可进行改动，且无需做出相应通知。请注意图纸上的版本和 / 或 日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司 产品保修的部分。 随时访问 Fairchild 在线封装网页，可以获取最新的封装图纸： https://www.fairchildsemi.com/package-drawings/MO/MOD23DC.pdf ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 9 www.fairchildsemi.com FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 轮廓封装详图 (FSB50450AS) 封装图纸作为一项服务，提供给考虑 Fairchild 元件的客户。具体参数可进行改动，且无需做出相应通知。请注意图纸上的版本和 / 或 日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司 产品保修的部分。 随时访问 Fairchild 在线封装网页，可以获取最新的封装图纸： https://www.fairchildsemi.com/package-drawings/MO/MOD23DG.pdf ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 10 www.fairchildsemi.com FSB50450A / FSB50450AS / FSB50450AT Motion SPM® 5 系列 轮廓封装详图 (FSB50450AT) 封装图纸作为一项服务，提供给考虑 Fairchild 元件的客户。具体参数可进行改动，且无需做出相应通知。请注意图纸上的版本和 / 或 日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司 产品保修的部分。 随时访问 Fairchild 在线封装网页，可以获取最新的封装图纸： https://www.fairchildsemi.com/package-drawings/MO/MOD23DF.pdf ©2012 Fairchild Semiconductor Corporation FSB50450A / FSB50450AS / FSB50450AT Rev. 1.7 11 www.fairchildsemi.com OPTOPLANAR® F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT¥ OPTOLOGIC® AccuPower¥ AttitudeEngine™ Awinda® AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FastvCore¥ FETBench¥ FPS¥ ® Power Supply WebDesigner¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ Sync-Lock™ ®* TinyBoost® TinyBuck® TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ Xsens™ ௝❺® * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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