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特性
相关资料
• 通过 UL 第 E209204 号认证 (UL1557)
• RD-FSB50450A - Reference Design for Motion SPM 5
Series Ver.2
• 500 V RDS(on) = 0.45 Ω(最大值) FRFET MOSFET 三
相逆变器,带有栅极驱动器和保护功能
• AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
• 内置自举二极管以简化印刷电路板布局
• AN-9080 - User’s Guide for Motion SPM 5 Series V2
• 低端 MOSFET 的三个独立开源引脚用于三相电流感测
概述
• 高电平有效接口,可用于 3.3 / 5 V 逻辑电平,施密特触
发脉冲输入
FSB50825AS 是一款先进的 Motion SPM® 5 模块,为交
流感应、无刷直流电机和 PMSM 电机提供非常全面的高
性 能 逆 变 器 输 出 平 台。这 些 模 块 综 合 优 化 了 内 置
MOSFETs (FRFET® 技术)的栅极驱动以最小化电磁干
扰和能量损耗。同时也提供多重模组保护特性,集成欠压
闭锁和热量监测。内置的高速 HVIC 只需要一个单电源电
压,将 逻 辑 电 平 栅 极 输 入 转 化 为 适 合 驱 动 模 块 内 部
MOSFET
的高电压,高电流驱动信号。独立的 开源
MOSFET 端子在每个相位均有效,可支持大量不同种类
的控制算法。
• 针对低电磁干扰进行优化
• 内置于 HVIC 的温度感测
• 用于栅极驱动和欠压保护的 HVIC
• 绝缘等级:1500 Vrms / 分钟
• 湿度敏感等级 (MSL) 3
• 符合 RoHS 标准
应用
• 小功率交流电机驱动器的三相逆变器驱动
封装标识与定购信息
器件标识
器件
封装
卷尺寸
包装类型
数量
FSB50825AS
FSB50825AS
SPM5Q-023
330 mm
卷带和卷盘
450
©2012 飞兆半导体公司
FSB50825AS Rev. C4
1
www.fairchildsemi.com
FSB50825AS Motion SPM® 5 系列
2019 年 9 月
FSB50825AS
Motion SPM® 5 系列
逆变器部分 (单个 MOSFET,除非另有说明。)
符号
参数
工作条件
额定值
单位
250
V
TC = 25°C
3.6
A
TC = 80°C
2.7
A
VDSS
单个 MOSFET 的漏极 - 源极电压
*ID 25
单个 MOSFET 的漏极持续电流
*ID 80
单个 MOSFET 的漏极持续电流
*IDP
单个 MOSFET 的漏极峰值电流
TC = 25°C, PW < 100 μs
9.0
A
单个 MOSFET 的漏极电流有效值
TC = 80°C, FPWM < 20 kHz
1.9
Arms
最大功耗
TC = 25°C, 单个 MOSFET
14.2
W
额定值
单位
20
V
*IDRMS
*PD
控制部分 (单个 HVIC,除非另有说明。)
符号
参数
工作条件
VCC
控制电源电压
VBS
高端偏压
施加在 VB 和 VS 之间
VIN
输入信号电压
施加在 VIN 和 COM 之间
施加在 VCC 和 COM 之间
20
V
-0.3 ~ VCC + 0.3
V
额定值
单位
250
V
自举二极管部分 (单个自举二极管,除非另有说明。)
符号
VRRMB
参数
工作条件
最大重复反向电压
* IFB
正向电流
TC = 25°C
0.5
A
* IFPB
正向电流 (峰值)
TC = 25°C, 脉冲宽度小于 1 ms
1.5
A
工作条件
额定值
单位
逆变器工作条件下的单个 MOSFET
(注 1)
8.8
°C/W
工作条件
额定值
单位
热阻
符号
RθJC
参数
结点 - 壳体的热阻
整个系统
符号
参数
TJ
工作结温
-40 ~ 150
°C
TSTG
存储温度
-40 ~ 125
°C
VISO
绝缘电压
1500
Vrms
60 Hz,正弦波形, 1 分钟,连接陶
瓷基板到引脚
注:
1. 关于壳体温度 (TC)的测量点,参见图 4。
2. 标记为 “ * “ 的为计算值或设计因素。
©2012 飞兆半导体公司
FSB50825AS Rev. C4
2
www.fairchildsemi.com
FSB50825AS Motion SPM® 5 系列
绝对最大额定值
FSB50825AS Motion SPM® 5 系列
引脚描述
引脚号
引脚名
1
COM
IC 公共电源接地
引脚描述
U 相高端 MOSFET 驱动的偏压
2
VB(U)
3
VCC(U)
U 相 IC 和低端 MOSFET 驱动的偏压
4
IN(UH)
U 相高端的信号输入
5
IN(UL)
U 相低端的信号输入
6
N.C
无连接
7
VB(V)
V 相高端 MOSFET 驱动的偏压
8
VCC(V)
V 相 IC 和 低端 MOSFET 驱动的偏压
9
IN(VH)
V 相高端的信号输入
10
IN(VL)
V 相低端的信号输入
11
VTS
HVIC 温度感测输出
12
VB(W)
13
VCC(W)
W 相 IC 和低端 MOSFET 驱动的偏压
14
IN(WH)
W 相高端的信号输入
15
IN(WL)
W 相低端的信号输入
16
N.C
17
P
18
U, VS(U)
19
NU
U 相的直流输入负端
20
NV
V 相的直流输入负端
21
V, VS(V)
W 相高端 MOSFET 驱动的偏压
无连接
直流输入正端
高端 MOSFET 驱动的 U 相偏压接地输出
高端 MOSFET 驱动的 V 相偏压接地输出
22
NW
23
W, VS(W)
W 相的直流输入负端
高端 MOSFET 驱动的 W 相偏压接地输出
(1) COM
(2) VB(U)
(17) P
(3) V CC(U)
VCC
VB
(4) IN (UH)
HIN
HO
(5) IN (UL)
LIN
VS
COM
LO
(18) U, V S(U)
(6) N.C
(19) N U
(7) VB(V)
(8) V CC(V)
VCC
VB
(9) IN (VH)
HIN
HO
LIN
VS
COM
LO
(10) IN (VL)
(11) V TS
(20) N V
(21) V, V S(V)
V TS
(12) V B(W)
(13) V CC(W)
VCC
VB
(14) IN (WH)
HIN
HO
(15) IN (WL)
LIN
VS
COM
LO
(22) N W
(23) W, V S(W)
(16) N.C
图 1. 引脚布局和内部框图 (仰视图)
注:
3. 每个低端 MOSFET 的源极端子与 Motion SPM® 5 中的电源接地或偏压接地不连接。外部连接应当如图 3 所示。
©2012 飞兆半导体公司
FSB50825AS Rev. C4
3
www.fairchildsemi.com
(TJ = 25°C, VCC = VBS = 15 V,除非另有说明。)
逆变器部分 (单个 MOSFET,除非另有说明。)
符号
参数
工作条件
BVDSS
漏极-源极击穿电压
VIN = 0 V, ID = 1 mA (注 1)
IDSS
零栅极电压漏极电流
RDS(on)
漏极至源极静态导通
电阻
VSD
最小值 典型值 最大值 单位
250
-
-
V
VIN = 0 V, VDS = 250 V
-
-
1
mA
VCC = VBS = 15 V, VIN = 5 V, ID = 2.0 A
-
0.33
0.45
Ω
-
-
1.2
V
-
950
-
ns
-
520
-
ns
-
150
-
ns
-
100
-
μJ
-
10
-
μJ
漏极-源极二极管正向 V = V = 15 V, V = 0 V, I = -2.0 A
CC
BS
IN
D
电压
tON
VPN = 150 V, VCC = VBS = 15 V, ID = 2.0 A
VIN = 0 V ↔ 5 V, 电感负载 L = 3 mH
高端和低端 MOSFET 开关
(注 2)
tOFF
trr
开关时间
EON
EOFF
RBSOA
反向偏压安全工作区
VPN = 200 V, VCC = VBS = 15 V, ID = IDP, VDS =
BVDSS, TJ = 150°C
高端和低端 MOSFET 开关 (注 3)
整个区域
控制部分 (单个 HVIC,除非另有说明。)
符号
参数
工作条件
最小值 典型值 最大值 单位
IQCC
VCC 静态电流
VCC = 15 V,
VIN = 0 V
施加在 VCC 和 COM 之间
-
-
200
μA
IQBS
VBS 静态电流
VBS = 15 V,
VIN = 0 V
施加在 VB(U) - U,
VB(V) - V, VB(W) - W
-
-
100
μA
UVCCD
UVCCR
UVBSD
低端欠压保护 (图 8)
高端欠压保护 (图 9)
UVBSR
VCC 欠压保护检测电平
7.4
8.0
9.4
V
VCC 欠压保护复位电平
8.0
8.9
9.8
V
VBS 欠压保护检测电平
7.4
8.0
9.4
V
VBS 欠压保护复位电平
8.0
8.9
9.8
V
600
790
980
mV
-
-
2.9
V
0.8
-
-
V
VTS
HVIC 温度感测电压输出
VCC = 15 V, THVIC = 25°C (注 4)
VIH
导通阈值电压
逻辑高电平
VIL
关断阈值电压
逻辑低电平
施加在 VIN 和 COM 之间
自举二极管部分 (单个自举二极管,除非另有说明。)
符号
VFB
trrB
参数
工作条件
最小值 典型值 最大值 单位
正向电压
IF = 0.1 A, TC = 25°C (注 5)
-
2.5
-
V
反向恢复时间
IF = 0.1 A, TC = 25°C
-
80
-
ns
注:
1. BVDSS 是 Motion SPM® 5 产品中的单个 MOSFET 的漏极和源极端子之间的绝对最大额定电压。考虑到寄生电感,VPN 应远低于该值,因此 VPN 在任何情况下不得超过 BVDSS。
2. tON 和 tOFF 包括内部驱动 IC 的传输延迟。所列出的数值是在实验室测试条件下测得,在实际应用中因为印刷电路板和布线的差异,数值也会有所不同。请参阅图 6 介绍的开关
时间定义,以及图 7 中的开关测试电路。
3. 每个 MOSFET 在开关工作时的峰值电流和电压也应在安全工作区 (SOA) 的范围内。请参阅图 7 中的 RBSOA 测试电路,它与开关测试电路相同。
4. Vts 只能用作模块的温度感测,但不能自动关闭 MOSFETs
5. 内置自举二极管其阻抗特性约为 15 Ω。请参阅图 2。
©2012 飞兆半导体公司
FSB50825AS Rev. C4
4
www.fairchildsemi.com
FSB50825AS Motion SPM® 5 系列
电气特性
符号
参数
工作条件
最小值 典型值 最大值 单位
VPN
电源电压
施加在 P 和 N 之间
-
150
200
V
VCC
控制电源电压
施加在 VCC 和 COM 之间
13.5
15.0
16.5
V
VBS
高端偏压
施加在 VB 和 VS 之间
13.5
15.0
16.5
V
3.0
-
VCC
V
VIN(ON)
输入导通阈值电压
VIN(OFF)
输入关断阈值电压
施加在 VIN 和 COM 之间
tdead
防止桥臂直通的死区时间
VCC = VBS = 13.5 ~ 16.5 V, TJ ≤ 150°C
fPWM
PWM 开关频率
TJ ≤ 150°C
0
-
0.6
V
1.0
-
-
μs
-
15
-
kHz
Built-In Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
IF [A]
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
6
7
8
9
10
11
12
VF [V]
13
14
15
TC = 25°C
图 2. 内置自举二极管特性 (典型值)
©2012 飞兆半导体公司
FSB50825AS Rev. C4
5
www.fairchildsemi.com
FSB50825AS Motion SPM® 5 系列
推荐工作条件
C1
+15 V
* Example Circuit : V phase
VDC
P
MCU
R5
C5
VCC
VB
HIN
HO
LIN
VS
COM
LO
V
10 μF
C2
C4
LIN
Output
Note
0
0
Z
Both FRFET Off
0
1
0
Low side FRFET On
C3
1
0
VDC
High side FRFET On
1
1
Forbidden
Shoot through
Open
Open
Z
Same as (0,0)
R3
N
VTS
HIN
Inverter
Output
®
One Leg Diagram of Motion SPM 5 Product
* Example of Bootstrap Paramters
:
C1 = C2 = 1 μF Ceramic Capacitor
图 3. 推荐的 MCU 接口和自举电路及其参数
注:
1. 自举电路的参数取决于 PWM 算法。上述为开关频率为 15 kHz 时的参数的典型例子。
2. Motion SPM 5 产品和 MCU (虚线显示部分)的每个输入端的 RC 耦合 (R5 和 C5)和 C4,可用于防止由浪涌噪声产生的错误信号。
3. 印刷电路板图形中的粗线应尽量短且粗,以减少电路中的寄生电感,从而导致浪涌电压的降低。旁路电容 C1, C2 和 C3 应具有良好的高频特性,以吸收高频纹波电流。
图 4. 壳体温度测量
注:
4. 将热电耦贴在 SPM 5 封装 (如果应用到,放在 SPM 5 封装和散热片中间)的散热片的顶部,以获得正确的温度测量数值。
3.5
3.0
VTS [V]
2.5
2.0
1.5
1.0
0.5
20
40
60
80
100
120
140
160
o
THVIC [ C]
图 5. VTS 的温度曲线 (典型值)
©2012 飞兆半导体公司
FSB50825AS Rev. C4
6
www.fairchildsemi.com
FSB50825AS Motion SPM® 5 系列
These values depend on PWM control algorithm
FSB50825AS Motion SPM® 5 系列
VIN
VIN
Irr
VDS
120% of ID
100% of ID
ID
10% of ID
ID
VDS
tON
trr
tOFF
(a) Turn-on
(b) Turn-off
图 6. 开关时间定义
C BS
VCC
ID
VCC
VB
HIN
HO
LIN
VS
COM
LO
L
VDC
+
V DS
-
VTS
®
One Leg Diagram of Motion SPM 5 Product
图 7. 开关和 RBSOA (单脉冲)测试电路 (低端)
Input Signal
UV Protection
Status
Low-side Supply, VCC
RESET
DETECTION
RESET
UVCCR
UVCCD
MOSFET Current
图 8. 欠压保护 (低端)
Input Signal
UV Protection
Status
High-side Supply, VBS
RESET
DETECTION
RESET
UVBSR
UVBSD
MOSFET Current
图 9. 欠压保护 (高端)
©2012 飞兆半导体公司
FSB50825AS Rev. C4
7
www.fairchildsemi.com
(2 ) VB(U)
(3 ) VCC(U)
R5
(4 ) IN(UH)
(5 ) IN(UL)
C5
C2
(6 ) N.C
(17) P
VCC
VB
HIN
HO
LIN
VS
COM
LO
(18) U , VS(U)
C3
(19) NU
(7 ) VB(V)
(8 ) VCC(V)
(9 ) IN(VH)
Micom
(10) IN(VL)
(11) VTS
(12) VB(W)
(13) VCC(W)
(14) IN(WH)
(15) IN(WL)
(16) N.C
VDC
VCC
VB
HIN
HO
LIN
VS
COM
LO
(20) NV
(21) V , VS(V)
M
VTS
VCC
VB
HIN
HO
LIN
VS
COM
LO
(22) NW
(23) W , VS(W)
C4
For current-sensing and protection
15 V
Supply
R4
C6
R3
图 10. 应用电路实例
注:
1. 关于引脚的位置,请参阅图 1。
2. Motion SPM® 5 产品和 MCU 的每个输入端的 RC 耦合 (R5 和 C5, R4 和 C6) 和 C4, 能有效的防止由浪涌噪声产生的错误的输入信号。
3. 由于位于 COM 和低端 MOSFET 的源极端子之间, R3 的压降会影响低端的开关性能和自举特性。为此,稳态情况下 R3 的压降应小于 1 V。
4. 为避免浪涌电压和 HVIC 故障,接地线和输出端子之间的接线应短且粗。
5. 所有的滤波电容器应紧密连接到 Motion SPM 5 产品,它们应当具有能够很好的阻挡高频纹波电流的特性。
©2012 飞兆半导体公司
FSB50825AS Rev. C4
8
www.fairchildsemi.com
FSB50825AS Motion SPM® 5 系列
C1
(1 ) COM
FSB50825AS Motion SPM® 5 系列
封装轮廓详图
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和
/ 或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆
公司产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/dwg/MO/MOD23DE.pdf
©2012 飞兆半导体公司
FSB50825AS Rev. C4
9
www.fairchildsemi.com
FSB50825AS Motion SPM® 5 系列
©2012 飞兆半导体公司
FSB50825AS Rev. C4
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