FSB560

FSB560 / FSB560A NPN Low-Saturation Transistor Features • These devices are designed with high-current gain and low-saturation voltage with collector currents up to 2 A continuous. C E B SuperSOTTM-3 (SOT-23) Ordering Information Part Number Marking Package Packing Method FSB560 560 SSOT 3L Tape and Reel FSB560A 560A SSOT 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5 V Collector Current - Continuous 2 A -55 to +150 °C IC TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2001 Fairchild Semiconductor Corporation FSB560 / FSB560A Rev. 1.1.0 www.fairchildsemi.com FSB560 / FSB560A — NPN Low-Saturation Transistor October 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Total Device Dissipation Derate Above 25°C Thermal Resistance, Junction-to-Ambient Max. Unit 500 mW 4 mW/°C 250 °C/W Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 60 V BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 80 V BVEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 5 ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current 100 nA VCB = 30 V, IE = 0, TA = 100°C 10 μA 100 nA VEB = 4 V, IC = 0 IC = 100 mA, VCE = 2 V hFE VCE(sat) DC Current Gain IC = 500 mA, VCE = 2 V (4) 70 FSB560 100 300 FSB560A 250 550 IC = 1 A, VCE = 2 V 80 IC = 2 A, VCE = 2 V 40 IC = 1 A, IB = 100 mA Collector-Emitter Saturation Voltage(4) IC = 2 A, IB = 200 mA (4) V VCB = 30 V, IE = 0 300 FSB560 350 FSB560A 300 mV VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 100 mA 1.25 V VBE(on) Base-Emitter On Voltage(4) IC = 1 A, VCE = 2 V 1 V Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 30 pF fT Transition Frequency IC = 100 mA, VCE = 5 V, f = 100 MHz 75 MHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% © 2001 Fairchild Semiconductor Corporation FSB560 / FSB560A Rev. 1.1.0 www.fairchildsemi.com 2 FSB560 / FSB560A — NPN Low-Saturation Transistor Thermal Characteristics(3) VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT-BASE-EMITTER SATURATION VOLTAGE(V) 1.4 β = 10 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 1.4 Vce = 2.0V 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C 0.2 0.0001 0.8 450 β = 10 f = 1.0 MHz 400 0.6 125°C 25°C 0.4 - 40°C 0.2 350 C ibo 300 250 200 150 100 C obo 50 0 0.001 0.01 0.1 1 I C- COLLECTOR CURRENT (A) 0 0.1 10 Figure 3. Collector-Emitter Saturation Voltage vs. Collector Current 0.2 0.5 1 2 5 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Figure 4. Input / Output Capacitance vs. Reverse Bias Voltage 400 700 VCE = 2 V FSB560 FSB560A 300 hFE- DC CURRENT GAIN 600 hFE- DC CURRENT GAIN 10 Figure 2. Base-Emitter On Voltage vs. Collector Current CAPACITANCE (pf) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Base-Emitter Saturation Voltage vs. Collector Current 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) o TA=150 C o 200 25 C o -40 C 100 0 0.001 0.010 0.100 1.000 IC- COLLECTOR CURRENT [A] VCE = 2 V o 400 25 C 300 o -40 C 200 100 0.010 0.100 1.000 10.000 IC- COLLECTOR CURRENT [A] Figure 5. Current Gain vs. Collector Current © 2001 Fairchild Semiconductor Corporation FSB560 / FSB560A Rev. 1.1.0 500 0 0.001 10.000 o TA=125 C Figure 6. Current Gain vs. Collector Current www.fairchildsemi.com 3 FSB560 / FSB560A — NPN Low-Saturation Transistor Typical Performance Characteristics FSB560 / FSB560A — NPN Low-Saturation Transistor Physical Dimensions Figure 7. MOLDED PACKAGE, SUPERSOT, 3-LEAD © 2001 Fairchild Semiconductor Corporation FSB560 / FSB560A Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT¥ AccuPower¥ Awinda® AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ ®* ® ® PowerTrench PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* μSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ Xsens™ ௝❺™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I71 © Fairchild Semiconductor Corporation www.fairchildsemi.com