FSBB30CH60DF
Motion SPM® 3 Series
Features
General Description
• UL Certified No. E209204 (UL1557)
FSBB30CH60DF is an advanced Motion SPM® 3
module providing a fully-featured, high-performance
inverter output stage for AC Induction, BLDC, and
PMSM motors. These modules integrate optimized gate
drive of the built-in IGBTs to minimize EMI and losses,
while also providing multiple on-module protection
features including under-voltage lockouts, over-current
shutdown, thermal monitoring of drive IC, and fault
reporting. The built-in, high-speed HVIC requires only a
single supply voltage and translates the incoming logiclevel gate inputs to the high-voltage, high-current drive
signals required to properly drive the module's internal
IGBTs. Separate negative IGBT terminals are available
for each phase to support the widest variety of control
algorithms.
• 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Built-In Bootstrap Diodes and Dedicated Vs Pins
Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• LVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Isolation Rating: 2500 Vrms / 1 min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9085 - Motion SPM® 3 Ver.5 Series Users Guide
• AN-9086 - SPM 3 Package Mounting Guide
• AN-9087 - Motion SPM® 3 Ver.5 Series Thermal
Performance Information
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity
FSBB30CH60DF
FSBB30CH60DF
SPMPA-027
Rail
10
©2015 Fairchild Semiconductor Corporation
FSBB30CH60DF Rev. 1.0
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FSBB30CH60DF Motion SPM® 3 Series
September 2015
FSBB30CH60DF Motion SPM® 3 Series
Integrated Power Functions
• 600 V - 30 A IGBT inverter for three-phase DC / AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 5 and 15.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
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FSBB30CH60DF Motion SPM® 3 Series
Pin Descriptions
Pin Number
Pin Name
1
VCC(L)
Pin Description
Low-Side Common Bias Voltage for IC and IGBTs Driving
2
COM
Common Supply Ground
3
IN(UL)
Signal Input for Low-Side U-Phase
4
IN(VL)
Signal Input for Low-Side V-Phase
5
IN(WL)
Signal Input for Low-Side W-Phase
6
VFO
Fault Output
7
VTS
Output for LVIC Temperature Sensing Voltage Output
Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input
8
CSC
9
IN(UH)
Signal Input for High-Side U-Phase
10
VCC(H)
High-Side Common Bias Voltage for IC and IGBTs Driving
11
VB(U)
High-Side Bias Voltage for U-Phase IGBT Driving
12
VS(U)
High-Side Bias Voltage Ground for U-Phase IGBT Driving
13
IN(VH)
Signal Input for High-Side V-Phase
14
VCC(H)
High-Side Common Bias Voltage for IC and IGBTs Driving
15
VB(V)
High-Side Bias Voltage for V-Phase IGBT Driving
16
VS(V)
High-Side Bias Voltage Ground for V Phase IGBT Driving
17
IN(WH)
Signal Input for High-Side W-Phase
18
VCC(H)
High-Side Common Bias Voltage for IC and IGBTs Driving
19
VB(W)
High-Side Bias Voltage for W-Phase IGBT Driving
20
VS(W)
High-Side Bias Voltage Ground for W-Phase IGBT Driving
21
NU
Negative DC-Link Input for U-Phase
22
NV
Negative DC-Link Input for V-Phase
23
NW
Negative DC-Link Input for W-Phase
24
U
Output for U-Phase
25
V
Output for V-Phase
26
W
Output for W-Phase
27
P
Positive DC-Link Input
©2015 Fairchild Semiconductor Corporation
FSBB30CH60DF Rev. 1.0
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FSBB30CH60DF Motion SPM® 3 Series
Internal Equivalent Circuit and Input/Output Pins
(19) VB ( W )
(18) VC C (H )
( 17) IN(WH )
P (27)
VB
VCC
COM
IN
OUT
VS
W (26)
(20) VS ( W )
(15) VB ( V)
(14) VC C (H )
(13) IN( VH )
(16) V S (V )
(11) VB ( U )
(10) VC C (H )
(9) IN( U H )
( 12) VS ( U)
(8) CS C
(7) VT S
(6) VF O
VB
VCC
COM
IN
OUT
VS
V (25)
VB
VCC
COM
OUT
VS
IN
CSC
U (24)
OUT
VTS
NW (23)
VFO
(5) IN(WL )
IN
OUT
(4) IN(VL )
NV (22)
IN
(3) IN(UL )
IN
(2) COM
COM
(1) VC C ( L)
OUT
VCC
NU (21)
Figure 3. Internal Block Diagram
Notes:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
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Unless Otherwise Specified)
Inverter Part
Symbol
VPN
VPN(Surge)
VCES
Parameter
Conditions
Supply Voltage
Applied between P - NU, NV, NW
Supply Voltage (Surge)
Applied between P - NU, NV, NW
Rating
Unit
450
V
Collector - Emitter Voltage
500
V
600
V
± IC
Each IGBT Collector Current
TC = 25°C, TJ 150°C (Note 4)
30
A
± ICP
Each IGBT Collector Current (Peak)
TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width (Note 4)
60
A
PC
Collector Dissipation
TC = 25°C per One Chip (Note 4)
113
W
TJ
Operating Junction Temperature
-40 ~ 150
°C
Rating
Unit
Control Part
Symbol
Parameter
Conditions
VCC
Control Supply Voltage
Applied between VCC(H), VCC(L) - COM
20
V
VBS
High-Side Control Bias Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20
V
VIN
Input Signal Voltage
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
-0.3 ~ VCC+0.3
V
VFO
Fault Output Supply Voltage
Applied between VFO - COM
-0.3 ~ VCC+0.3
V
IFO
Fault Output Current
Sink Current at VFO pin
VSC
Current Sensing Input Voltage
Applied between CSC - COM
2
mA
-0.3 ~ VCC+0.3
V
Rating
Unit
600
V
Bootstrap Diode Part
Symbol
VRRM
Parameter
Conditions
Maximum Repetitive Reverse Voltage
IF
Forward Current
TC = 25°C, TJ 150°C (Note 4)
0.5
A
IFP
Forward Current (Peak)
TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width (Note 4)
2.0
A
TJ
Operating Junction Temperature
-40 ~ 150
°C
Conditions
Rating
Unit
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5 V, TJ = 150°C,
Non-repetitive, < 2 s
400
V
Module Case Operation Temperature
See Figure 2
-40 ~ 125
°C
Total System
Symbol
VPN(PROT)
TC
Parameter
TSTG
Storage Temperature
VISO
Isolation Voltage
-40 ~ 125
°C
2500
Vrms
Typ. Max.
Unit
60 Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat Sink Plate
Thermal Resistance
Symbol
Rth(j-c)Q
Rth(j-c)F
Parameter
Junction to Case Thermal Resistance
(Note 5)
Conditions
Min.
Inverter IGBT part (per 1 / 6 module)
-
-
1.10
°C / W
Inverter FWD part (per 1 / 6 module)
-
-
2.10
°C / W
Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
©2015 Fairchild Semiconductor Corporation
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FSBB30CH60DF Motion SPM® 3 Series
Absolute Maximum Ratings (TJ = 25°C,
Inverter Part
Symbol
VCE(SAT)
VF
HS
tON
Parameter
Conditions
Min.
Typ.
Max.
Unit
Collector - Emitter Saturation VCC = VBS = 15 V
Voltage
VIN = 5 V
IC = 30 A, TJ = 25°C
-
1.50
2.10
V
FWDi Forward Voltage
VIN = 0 V
IF = 30 A, TJ = 25°C
-
1.80
2.40
V
Switching Times
VPN = 300 V, VCC = 15 V, IC = 30 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
See Figure 5
(Note 6)
0.50
0.90
1.40
s
-
0.25
0.55
s
-
0.90
1.40
s
-
0.10
0.40
s
-
0.10
-
s
VPN = 300 V, VCC = 15 V, IC = 30 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
See Figure 5
(Note 6)
0.40
0.80
1.30
s
-
0.25
0.55
s
-
0.90
1.40
s
-
0.15
0.45
s
-
0.10
-
s
-
-
5
mA
tC(ON)
tOFF
tC(OFF)
trr
LS
tON
tC(ON)
tOFF
tC(OFF)
trr
ICES
Collector - Emitter Leakage VCE = VCES
Current
Note:
6. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
100% I C 100% I C
t rr
V CE
IC
IC
V CE
V IN
V IN
t ON
t OFF
t C(ON)
t C(OFF)
10% I C
V IN(ON)
90% I C
V IN(OFF)
10% V CE
10% V CE
10% I C
(b) turn-off
(a) turn-on
Figure 4. Switching Time Definition
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FSBB30CH60DF Motion SPM® 3 Series
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
IC
P
CBS
VCC( H)
VB
COM(H) OUT(H)
IN(H)
LS Switching
VS
HS Switching
U,V,W
VPN
V
LS Switching
5V
VCC(L)
VFO
OUT(L)
TSU
V IN
0V
VCC
4.7kΩ
300V
HS Switching
CSC
V
+15V
Inductor
IN(L)
COM(L)
NU,V,W
V
+5V
Figure 5. Example Circuit for Switching Test
Figure 6. Switching Loss Characteristics
Figure 7. Temperature Profile of VTS (Typical)
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FSBB30CH60DF Motion SPM® 3 Series
One-Leg Diagram of SPM 3
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VF
Forward Voltage
IF = 0.1 A, TJ = 25°C
-
2.5
-
V
trr
Reverse Recovery Time
IF = 0.1 A, dIF / dt = 50 A / s, TJ = 25°C
-
80
-
ns
Parameter
Conditions
Control Part
Symbol
IQCCH
Quiescent VCC Supply
Current
Min.
Typ.
Max.
Unit
VCC(H) = 15 V,
IN(UH,VH,WH) = 0 V
VCC(H) - COM
-
-
0.50
mA
IQCCL
VCC(L) = 15 V,
IN(UL,VL, WL) = 0 V
VCC(L) - COM
-
-
6.00
mA
IPCCH
VCC(H) = 15 V, fPWM = 20 kHz, VCC(H) - COM
duty = 50%, applied to one
PWM signal input for HighSide
-
-
0.50
mA
VCC(L) = 15V, fPWM = 20 kHz, VCC(L) - COM
duty = 50%, applied to one
PWM signal input for LowSide
-
-
10.0
mA
Operating VCC Supply
Current
IPCCL
IQBS
Quiescent VBS Supply
Current
VBS = 15 V,
IN(UH, VH, WH) = 0 V
VB(U) - VS(U),
VB(V) - VS(V),
VB(W) - VS(W)
-
-
0.30
mA
IPBS
Operating VBS Supply
Current
VB(U) - VS(U),
VCC = VBS = 15 V,
fPWM = 20 kHz, duty = 50%, VB(V) - VS(V),
applied to one PWM signal VB(W) - VS(W)
input for High-Side
-
-
4.50
mA
VFOH
Fault Output Voltage
VCC = 15 V, VSC = 0 V, VFO Circuit: 4.7 k to 5 V
Pull-up
4.5
-
-
V
VCC = 15 V, VSC = 1 V, VFO Circuit: 4.7 k to 5 V
Pull-up
-
-
0.5
V
0.45
0.50
0.55
V
VFOL
VSC(ref)
Short Circuit Trip Level
UVCCD
Supply Circuit Under- Detection Level
Voltage Protection
Reset Level
9.8
-
13.3
V
UVCCR
10.3
-
13.8
V
UVBSD
Detection Level
9.0
-
12.5
V
UVBSR
Reset Level
9.5
-
13.0
V
VCC = 15 V (Note 7)
CSC - COM(L)
tFOD
Fault-Out Pulse Width
50
-
-
s
VTS
LVIC Temperature
VCC(L) = 15 V, TLVIC = 25°C (Note 8)
Sensing Voltage Output See Figure 7
880
980
1080
mV
-
-
2.6
V
0.8
-
-
V
VIN(ON)
ON Threshold Voltage
VIN(OFF)
OFF Threshold Voltage
Applied between IN(UH, VH, WH) - COM,
IN(UL, VL, WL) - COM
Note:
7. Short-circuit current protection is functioning only at the low-sides.
8. TLVIC is the temperature of LVIC itself. VTS is only for sensing temperature of LVIC and can not shutdown IGBTs automatically.
©2015 Fairchild Semiconductor Corporation
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FSBB30CH60DF Motion SPM® 3 Series
Bootstrap Diode Part
Symbol
Parameter
Value
Conditions
Unit
Min.
Typ.
Max.
-
300
400
V
VPN
Supply Voltage
Applied between P - NU, NV, NW
VCC
Control Supply Voltage
Applied between VCC(UH,
COM
- COM, VCC(L) -
14.0
15
16.5
V
VBS
High-Side Bias Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) VS(W)
13.0
15
18.5
V
-1
-
1
V / s
1.0
-
-
s
-
-
20
kHz
5
V
-
s
VH, WH)
dVCC / dt, Control Supply
dVBS / dt Variation
tdead
Blanking Time for
Preventing Arm - Short
For Each Input Signal
fPWM
PWM Input Signal
-40C TC 125°C, -40C TJ 150°C
VSEN
Voltage for Current
Sensing
Applied between NU, NV, NW - COM
(Including Surge Voltage)
-5
VCC = VBS = 15 V, IC 60 A, Wiring Inductance
between NU, V, W and DC Link N < 10nH (Note 9)
2.0
PWIN(ON) Minimun Input Pulse
Width
PWIN(OFF)
TJ
Junction Temperature
-
2.0
-
-
- 40
-
150
C
Note:
9. This product might not make response if input pulse width is less than the recommanded value.
Figure 8. Allowable Maximum Output Current
Note:
10. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition.
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FSBB30CH60DF Motion SPM® 3 Series
Recommended Operating Conditions
Parameter
Limits
Conditions
Min.
Typ.
Max.
0
-
+150
Unit
m
Device Flatness
See Figure 9
Mounting Torque
Mounting Screw: M3
Recommended 0.7 N • m
0.6
0.7
0.8
N•m
See Figure 10
Recommended 7.1 kg • cm
6.2
7.1
8.1
kg • cm
Terminal Pulling Strength
Load 19.6 N
10
-
-
s
Terminal Bending Strength
Load 9.8 N, 90 deg. bend
2
-
-
times
-
15
-
g
Weight
(+)
(+)
Figure 9. Flatness Measurement Position
2
Pre - Screwing : 1
2
Final Screwing : 2
1
1
Figure 10. Mounting Screws Torque Order
Note:
11. Do not make over torque when mounting screws. Much mounting torque may cause DBC cracks, as well as bolts and Al heat-sink destruction.
12. Avoid one-sided tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the DBC substrate of package to be
damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating.
©2015 Fairchild Semiconductor Corporation
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FSBB30CH60DF Motion SPM® 3 Series
Mechanical Characteristics and Ratings
FSBB30CH60DF Motion SPM® 3 Series
Time Charts of SPMs Protective Function
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVCCR
a1
Control
Supply Voltage
a6
UVCCD
a3
a2
a7
a4
Output Current
a5
Fault Output Signal
Figure 11. Under-Voltage Protection (Low-Side)
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts with a fixed pulse width.
a6 : Under voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVBSR
Control
Supply Voltage
b5
b1
UVBSD
b3
b6
b2
b4
Output Current
High-level (no fault output)
Fault Output Signal
Figure 12. Under-Voltage Protection (High-Side)
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
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c6
Protection
Circuit state
SET
Internal IGBT
Gate-Emitter Voltage
FSBB30CH60DF Motion SPM® 3 Series
Lower arms
control input
c7
RESET
c4
c3
c2
Internal delay
at protection circuit
SC current trip level
c8
c1
Output Current
SC Reference Voltage
Sensing Voltage
of sense resistor
RC Filter circuit
Fault Output Signal
c5 time constant
delay
Figure 13. Short-Circuit Current Protection (Low-Side Operation only)
(with the external sense resistance and RC filter connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : All low-side IGBT’s gate are hard interrupted.
c4 : All low-side IGBTs turn OFF.
c5 : Fault output operation starts with a fixed pulse width.
c6 : Input HIGH: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c7 : Fault output operation finishes, but IGBT doesn’t turn on until triggering next signal from LOW to HIGH.
c8 : Normal operation: IGBT ON and carrying current.
Input/Output Interface Circuit
+5V (MCU or Control power )
SPM
4.7 kΩ
IN(UH) , IN (VH) , IN(WH)
IN (UL) , IN (VL) , IN(WL)
MCU
VFO
COM
Figure 14. Recommended CPU I/O Interface Circuit
Note:
13. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board.
The input signal section of the Motion SPM 3 product integrates 5 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the
signal voltage drop at input terminal.
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(17) IN( WH)
(18) VCC( H)
C4
C3
C4
P (27)
IN
VCC
COM
OUT
(19) VB( W)
W (26)
VS
VB
(20) VS( W)
D2
R1
(13) IN( VH)
Gating VH
(14) VCC( H)
C4
C3
C4
D2
M
C
U
R1
(15) VB( V)
(16) V S(V)
(10) V CC( H)
C1
C4
C1 C1
C3
5V line
C4
OUT
VS
VB
(9) IN( UH)
Gating UH
IN
VCC
COM
C7
OUT
VB
( 12) VS( U)
M
IN
VCC
COM
(11) V B(U)
V (25)
V DC
U (24)
VS
D2
R3
VTS
R6
B
D
C6
CSC
(7) VT S
R1
NW (23)
(5) IN(WL )
R1
(4) IN(VL)
IN
NV (22)
R4
(3) IN(UL )
Gating UL
E
IN
C1
C1
C1
C1
(2) COM
15V line
C1
COM
(1) VCC( L)
OUT
VCC
D2
C2
A
OUT
IN
R1
R4
V FO
R1
Gating WL
OUT
V TS
(6) VF O
Fault
Gating VL
(8) CSC
C5
NU (21)
Power
GND Line
R4
C4
C
R5
W-Phase Current
V-Phase Current
U-Phase Current
Input Signal for
Short -Circuit Protection
R5
Control
GND Line
R5
C5
C5
C5
Figure 15. Typical Application Circuit
Note:
14. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2 - 3 cm)
15. VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 2 mA. Please
refer to Figure 14.
16. Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull-down each input signal line to GND. RC coupling circuits should be adopted for the prevention
of input signal oscillation. R1C1 time constant should be selected in the range 50 ~ 150 ns. (Recommended R1 = 100 Ω , C1 = 1 nF)
17. Each wiring pattern inductance of A point should be minimized (Recommend less than 10nH). Use the shunt resistor R4 of surface mounted (SMD) type to reduce wiring
inductance. To prevent malfunction, wiring of point E should be connected to the terminal of the shunt resistor R4 as close as possible.
18. To prevent errors of the protection function, the wiring of B, C, and D point should be as short as possible.
19. In the short-circuit protection circuit, please select the R6C6 time constant in the range 1.5 ~ 2 s. Do enough evaluaiton on the real system because short-circuit protection
time may vary wiring pattern layout and value of the R6C6 time constant.
20. Each capacitor should be mounted as close to the pins of the Motion SPM® 3 product as possible.
21. To prevent surge destruction, the wiring between the smoothing capacitor C7 and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22 F between the P & GND pins is recommended.
22. Relays are used at almost every systems of electrical equipments at industrial application. In these cases, there should be sufficient distance between the CPU and the
relays.
23. The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals
(Recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω ).
24. C2 of around 7 times larger than bootstrap capacitor C3 is recommended.
25. Please choose the electrolytic capacitor with good temperature characteristic in C3. Also, choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and
frequency characteristics in C4.
©2015 Fairchild Semiconductor Corporation
FSBB30CH60DF Rev. 1.0
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FSBB30CH60DF Motion SPM® 3 Series
R1
Gating WH
FSBB30CH60DF Motion SPM® 3 Series
Detailed Package Outline Drawings (FSBB30CH60DF)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD27BA.pdf
©2015 Fairchild Semiconductor Corporation
FSBB30CH60DF Rev. 1.0
14
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©2015 Fairchild Semiconductor Corporation
FSBB30CH60DF Rev. 1.0
15
www.fairchildsemi.com
