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FSDM311A

FSDM311A

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    DIP8

  • 描述:

    Converter Offline Flyback Topology 67kHz 8-DIP

  • 数据手册
  • 价格&库存
FSDM311A 数据手册
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FSDM311A Green Mode Fairchild Power Switch (FPS™) Features Description ƒ ƒ ƒ Internal Avalanche-Rugged SenseFET ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Internal Start-up Circuit The FSDM311A consists of an integrated Pulse Width Modulator (PWM) and SenseFET, and is specifically designed for high-performance, off-line, Switch-Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high-voltage power switching regulator that combines a VDMOS SenseFET with a voltage-mode PWM control block. The integrated PWM controller features include a fixed oscillator, Under-Voltage Lockout (UVLO) protection, Leading-Edge Blanking (LEB), an optimized gate turnon/turn-off driver, Thermal Shutdown (TSD) protection, and temperature-compensated precision-current sources for loop compensation and fault protection circuitry. When compared to a discrete MOSFET and controller or RCC switching converter solution, the FSDM311A device reduces total component count and design size and weight, while increasing efficiency, productivity, and system reliability. This device provides a basic platform that is well suited for the design of cost-effective flyback converters. Precision Fixed Operating Frequency: 67KHz Consumes Under 0.2W at 265VAC & No Load with Advanced Burst-Mode Operation Pulse-by-Pulse Current Limiting Over-Voltage Protection (OVP) Overload Protection (OLP) Internal Thermal Shutdown Function (TSD) Auto-Restart Mode Under-Voltage Lockout (UVLO) with Hysteresis Built-in Soft-Start Secondary-Side Regulation Applications ƒ ƒ Charger & Adapter for Mobile Phone, PDA, & MP3 Auxiliary Power for White Goods, PC, C-TV, & Monitors Related Resources AN-4134: Design Guidelines for Off-line Forward Converters Using Fairchild Power Switch (FPS™) AN-4137: Design Guidelines for Off-line Flyback Converters Using Fairchild Power Switch (FPS™) AN-4138: Design Considerations for Battery Charger Using Green Mode Fairchild Power Switch (FPS™) AN-4140: Transformer Design Consideration for Offline Flyback Converters Using Fairchild Power Switch (FPS™) AN-4141: Troubleshooting and Design Tips for Fairchild Power Switch (FPS™) Flyback Applications AN-4147: Design Guidelines for RCD Snubber of Flyback AN-4148: Audible Noise Reduction Techniques for FPS™ Applications Ordering Information Product Number Package Marking Code BVDSS fOSC RDS(ON) FSDM311A 8DIP DM311A 650V 67KHz 14Ω All packages are lead free per JEDEC: J-STD-020B standard. FPS™ is a trademark of Fairchild Semiconductor Corporation. © 2007 Fairchild Semiconductor Corporation FSDM311A • Rev.1.0.2 www.fairchildsemi.com FSDM311A — Green Mode Fairchild Power Switch (FPSTM) November 2007 OUTPUT POWER TABLE (1) Open Frame Product (2) 230VAC ±15% FSDM311A 85~265VAC 13W 8W Notes: 1. Maximum practical continuous power in an openframe design with sufficient drain pattern as a heat sinker, at 50°C ambient. 2. 230VAC or 100/115VAC with doubler. Figure 1. Typical Flyback Application Internal Block Diagram VCC Drain 5 6,7,8 L 2 Internal Bias Voltage Ref UVLO H 9/7V IDELAY IFB 5 A 400 A Vck OSC DRIVER PWM Vfb Vstr SFET S Q 3 R S/S 15mS BURST VBURL/ VBURH NC 4 LEB OLP ILIM Reset Min.20V S Q VSD OVP Vth Rsense R TSD A/R 1 GND Figure 2. © 2007 Fairchild Semiconductor Corporation FSDM311A • Rev.1.0.2 Functional Block Diagram www.fairchildsemi.com 2 FSDM311A — Green Mode Fairchild Power Switch (FPSTM) Typical Application & Output Power Table Figure 3. 8-Lead DIP Pin Assignments (Top View) Pin Definitions Pin # Name Description 1 GND Ground. SenseFET source terminal on primary side and internal control ground. 2 Vcc Positive supply voltage input. Although connected to an auxiliary transformer winding, current is supplied from pin 5 (Vstr) via an internal switch during start-up (see the Internal Block Diagram in Figure 2). It is not until VCC reaches the UVLO upper threshold (9V) that the internal start-up switch opens and device power is supplied via the auxiliary transformer winding. 3 Vfb Feedback. Inverting input to the PWM comparator with its normal input level lies between 0.5V and 2.5V. It has a 0.4mA current source connected internally, while a capacitor and optocoupler are typically connected externally. A feedback voltage of 4.5V triggers overload protection (OLP). There is a time delay while charging external capacitor CFB from 3V to 4.5V using an internal 5µA current source. This time delay prevents false triggering under transient conditions, but allows the protection mechanism to operate under true overload conditions. 4 NC No Connection. 5 Vstr Start-up. This pin connects directly to the rectified AC line voltage source. At start-up, the internal switch supplies internal bias and charges an external storage capacitor placed between the Vcc pin and ground. Once the VCC reaches 9V, the internal switch stops charging the capacitor. 6,7,8 Drain SenseFET Drain. The drain pins are designed to connect directly to the primary lead of the transformer and are capable of switching a maximum of 650V. Minimize the length of the trace connecting these pins to the transformer to decrease leakage inductance. © 2007 Fairchild Semiconductor Corporation FSDM311A • Rev.1.0.2 www.fairchildsemi.com 3 FSDM311A — Green Mode Fairchild Power Switch (FPSTM) Pin Configuration Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C, unless otherwise specified. Symbol Value Unit Drain Pin Voltage 650 V VSTR Vstr Pin Voltage 650 V VDG Drain-Gate Voltage 650 V VGS Gate-Source Voltage ±20 V 1.5 A A VDRAIN Parameter (3) IDM Drain Current Pulsed ID Continuous Drain Current (TC=25°C) 0.5 Continuous Drain Current (TC=100°C) 0.32 A EAS ID Single Pulsed Avalanche Energy 10 mJ VCC Supply Voltage 20 V VFB Feedback Voltage Range -0.3 to VSTOP V PD Total Power Dissipation 1.40 W TJ Operating Junction Temperature Internally limited °C TA Operating Ambient Temperature -25 to +85 °C Storage Temperature -55 to +150 °C Value Unit 88.84 °C/W 13.94 °C/W TSTG (4) Notes: 3. Repetitive rating: Pulse width is limited by maximum junction temperature. 4. L = 24mH, starting TJ = 25°C Thermal Impedance TA=25°C, unless otherwise specified. Symbol Parameter 8DIP θJA θJC Junction-to-Ambient Thermal Impedance Junction-to-Case Thermal Impedance (5) (6) Notes: 5. Free standing with no heatsink; without copper clad. (Measurement Condition – just before junction temperature TJ enters into OTP). 6. Measured on the DRAIN pin close to plastic interface. 7. All items are tested with the standards JESD 51-2 and 51-10 (DIP). © 2007 Fairchild Semiconductor Corporation FSDM311A • Rev.1.0.2 www.fairchildsemi.com 4 FSDM311A — Green Mode Fairchild Power Switch (FPSTM) Absolute Maximum Ratings TA=25°C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit SENSEFET SECTION IDSS RDS(ON) gfs CISS Zero-Gate-Voltage Drain Current Drain-Source On-State Resistance (8) Forward Trans-Conductance VDS=650V, VGS=0V 25 VDS=520V, VGS=0V, TC=125°C 200 VGS=10V, ID=0.5A VDS=50V, ID=0.5A 14 1.0 Input Capacitance 1.3 VGS=0V, VDS=25V, f=1MHz Output Capacitance CRSS Reverse Transfer Capacitance 3.8 td(on) Turn-On Delay Time 9.5 tr tf Ω S 162 COSS td(off) 19 mA Rise Time 19 VDS=325V, ID=1.0A Turn-Off Delay Time pF 18 ns 33 42 Fall Time Qg Total Gate Charge Qgs Gate-Source Charge 7.0 Qgd Gate-Drain (Miller) Charge VGS=10V, ID=1.0A, VDS=325V nC 3.1 0.4 CONTROL SECTION fOSC Switching Frequency ΔfOSC Switching Frequency Variation DMAX Maximum Duty Cycle VSTART VSTOP IFB Feedback Source Current Internal Soft-Start Time ΔVREF/ΔT -25°C ≤ TA ≤ 85°C UVLO Threshold Voltage tS/S VREF 61 (9) Reference Voltage 73 KHz ±5 ±10 % 60 67 74 % VFB=GND 8 9 10 V VFB=GND 6 7 8 V 0.35 0.40 0.45 mA 10 15 20 ms 4.2 4.5 4.8 V 0.3 0.6 mV/°C 0.6 0.7 0.8 V 0.45 0.55 0.65 V 0V ≤ VFB ≤ 3V (10) Reference Voltage Variation (9, 10) with Temperature 67 -25°C ≤ TA ≤ 85°C BURST MODE SECTION VBURH VBURL TJ=25°C Burst Mode Voltage VBUR(HYS) Hysteresis 150 mV 0.500 0.575 0.650 A PROTECTION SECTION ILIM Peak Current Limit TSD Thermal Shutdown Temperature di/dt=90mA/µs (10) 125 145 4.5 VSD Shutdown Feedback Voltage 4.0 VOVP Over-Voltage Protection 20 IDELAY Shutdown Delay Current 3V ≤ VFB ≤ VSD °C 5.0 V V 4 5 6 µA 450 1.5 3.0 mA 550 650 µA TOTAL DEVICE SECTION IOP Operating Supply Current (control part only) VCC ≤ 16V ICH Start-up Charging Current VCC=0V, VSTR=50V Notes: 8. Pulse test: Pulse width ≤ 300µs, duty ≤ 2%. 9. These parameters, although guaranteed, are tested in EDS (wafer test) process. 10. These parameters, although guaranteed, are not 100% tested in production. © 2007 Fairchild Semiconductor Corporation FSDM311A • Rev.1.0.2 www.fairchildsemi.com 5 FSDM311A — Green Mode Fairchild Power Switch (FPSTM) Electrical Characteristics 1.15 1.15 1.10 1.10 1.05 1.05 1.00 1.00 IOP VREF Normalized at TA = 25°C. 0.95 0.95 0.90 0.90 0.85 -50 0 50 100 0.85 150 -50 0 Figure 5. 1.15 1.10 1.10 1.05 1.05 VSTOP VSTAART Reference Voltage (VREF) vs. TA 1.15 1.00 0.95 0.90 0.90 -50 0 50 100 0.85 150 Operating Supply Current (IOP) vs. TA -50 0 Temperature [°C] Start Threshold Voltage (VSTART) vs. TA Figure 7. 1.15 1.15 1.10 1.10 1.05 1.05 1.00 0.95 0.90 0.90 -50 0 50 100 0.85 150 -50 Temperature [°C] Figure 8. 150 Stop Threshold Voltage (VSTOP) vs. TA 0 50 100 150 Temperature [°C] Operating Frequency (fOSC) vs. TA © 2007 Fairchild Semiconductor Corporation FSDM311A • Rev.1.0.2 100 1.00 0.95 0.85 50 Temperature [°C] DMAX fOSC Figure 6. 150 1.00 0.95 0.85 100 Temperature [°C] Temperature [°C] Figure 4. 50 Figure 9. Maximum Duty Cycle (DMAX) vs. TA www.fairchildsemi.com 6 FSDM311A — Green Mode Fairchild Power Switch (FPSTM) Typical Performance Characteristics 1.15 1.15 1.10 1.10 1.05 1.05 1.00 1.00 IFB ILIM Normalized at TA = 25°C. 0.95 0.95 0.90 0.90 0.85 0.85 -50 0 50 100 150 -50 0 Temperature [°C] Peak Current Limit (ILIM) vs. TA Figure 11. 1.15 1.15 1.10 1.10 1.05 1.05 1.00 0.95 0.90 0.90 -50 0 50 100 0.85 150 Temperature [°C] Figure 12. 150 Feedback Source Current (IFB) vs. TA 1.00 0.95 0.85 100 Temperature [°C] VSD IDELAY Figure 10. 50 -50 0 50 100 150 Temperature [°C] Shutdown Delay Current (IDELAY) vs. TA Figure 13. Shutdown Feedback Voltage (VSD) vs. TA 1.15 1.10 VOVP 1.05 1.00 0.95 0.90 0.85 -50 0 50 100 150 Temperature [°C] Figure 14. Over-Voltage Protection (VOVP) vs. TA © 2007 Fairchild Semiconductor Corporation FSDM311A • Rev.1.0.2 www.fairchildsemi.com 7 FSDM311A — Green Mode Fairchild Power Switch (FPSTM) Typical Performance Characteristics (Continued) 1. Start-up: At start-up, the internal high-voltage current source supplies the internal bias and charges the external VCC capacitor, as shown in Figure 15. When VCC reaches 9V, the device starts switching and the internal high-voltage current source stops charging the capacitor. The device is in normal operation provided VCC does not drop below 7V. After start-up, the bias is supplied from the auxiliary transformer winding. Figure 15. 2. Feedback Control: The FSDM311A is the voltagemode controlled device, as shown in Figure 17. Usually, an opto-coupler and shunt regulator, such as KA431, are used to implement the feedback network. The feedback voltage is compared with an internally generated sawtooth waveform that directly controls the duty cycle. When the shunt regulator reference pin voltage exceeds the internal reference voltage of 2.5V, the opto-coupler LED current increases, the feedback voltage VFB is pulled down, and it reduces the duty cycle. This happens when the input voltage increases or the output load decreases. Internal Start-up Circuit Calculating the VCC capacitor is an important step in design with the FSDM311A. At initial start-up, the maximum value of start operating current ISTART is about 100µA, which supplies current to UVLO and VREF blocks. The charging current IVcc of the VCC capacitor is equal to ISTR – 100µA. After VCC reaches the UVLO start voltage, only the bias winding supplies VCC current to the device. When the bias winding voltage is not sufficient, the VCC level decreases to the UVLO stop voltage and the internal current source is activated again to charge the VCC capacitor. To prevent this VCC fluctuation (charging/discharging), the VCC capacitor should be chosen for a value between 10µF and 47µF. Figure 17. 3. Leading-Edge Blanking (LEB): At the instant the internal SenseFET is turned on, the primary-side capacitance and secondary-side rectifier diode reverse recovery typically cause a high-current spike through the SenseFET. Excessive voltage across the RSENSE resistor leads to incorrect pulse-by-pulse current limit protection. To avoid this, a leading-edge blanking (LEB) circuit disables pulse-by-pulse current limit protection block for a fixed time (tLEB) after the SenseFET turns on. 4. Protection Circuit: The FSDM311A has several protective functions, such as overload protection (OLP), over-voltage protection (OVP), under-voltage lockout (UVLO), and thermal shutdown (TSD). Because these protection circuits are fully integrated in the IC without external components, the reliability is improved without increasing costs. Once a fault condition occurs, switching is terminated and the SenseFET remains off, which causes VCC to fall. When VCC reaches the UVLO stop voltage, VSTOP (7V), the protection is reset and the internal high-voltage current source charges the Vcc capacitor via the Vstr pin. When VCC reaches the UVLO start voltage, VSTART (9V), the device resumes normal operation. In this manner, the auto-restart can alternately enable and disable the switching of the power SenseFET until the fault condition is eliminated. Figure 18. Protection Block Figure 16. Charging VCC Capacitor through VSTR © 2007 Fairchild Semiconductor Corporation FSDM311A • Rev.1.0.2 PWM and Feedback Circuit www.fairchildsemi.com 8 FSDM311A — Green Mode Fairchild Power Switch (FPSTM) Functional Description VFB Over Load Protection Figure 20. Internal Soft-Start 6. Burst Operation: To minimize the power dissipation in standby mode, the FSDM311A enters burst mode operation. As the load decreases, the feedback voltage decreases. The device automatically enters burst mode when the feedback voltage drops below VBURL (0.55V). At this point, switching stops and the output voltages start to drop. This causes the feedback voltage to rise. Once is passes VBURH (0.70V), switching starts again. The feedback voltage falls and the process repeats. Burst mode operation alternately enables and disables switching of the power MOSFET to reduce the switching loss in standby mode. 4.5V 3V t12= CFB (V(t2)-V(t1)) / IDELAY t1 t12 = C FB V ( t 2 ) − V ( t1 ) ; I DELAY Figure 19. t2 t I DELAY = 5 μ A , V (t1 ) = 3V , V ( t 2 ) = 4 . 5V Figure 21. Burst Operation Block Vo Overload Protection (OLP) Voset 4.2 Thermal Shutdown (TSD): The SenseFET and the control IC are integrated, making it easier for the control IC to detect the temperature of the SenseFET. When the temperature exceeds approximately 145°C, thermal shutdown is activated. VFB 0.7V 0.55V 5. Soft-Start: The FPS has an internal soft-start circuit that slowly increases the feedback voltage with the SenseFET current right after it starts up. The typical soft-start time is 15ms, as shown in Figure 20, where progressive increment of the SenseFET current is allowed during the start-up phase. The soft-start circuit progressively increases current limits to establish proper working conditions for transformers, inductors, capacitors, and switching devices. It also helps to prevent transformer saturation and reduces the stress on the secondary diode. Ids Vds t Figure 22. © 2007 Fairchild Semiconductor Corporation FSDM311A • Rev.1.0.2 Burst Operation Function www.fairchildsemi.com 9 FSDM311A — Green Mode Fairchild Power Switch (FPSTM) 4.1 Overload Protection (OLP): Overload is defined as the load current exceeding a pre-set level due to an unexpected event. In this situation, the protection circuit should be activated to protect the SMPS. However, even when the SMPS is operating normally, the overload protection (OLP) circuit can be activated during the load transition. To avoid this undesired operation, the OLP circuit is designed to be activated after a specified time to determine whether it is a transient situation or an overload situation. If the output consumes more than the maximum power determined by ILIM, the output voltage (VO) decreases below its rating voltage. This reduces the current through the opto-coupler LED, which also reduces the opto-coupler transistor current, thus increasing the feedback voltage (VFB). If VFB exceeds 3V, the feedback input diode is blocked and the 5µA current source (IDELAY) starts to charge CFB slowly up to VCC. In this condition, VFB increases until it reaches 4.5V, when the switching operation is terminated, as shown in Figure 19. The shutdown delay time is the time required to charge CFB from 3V to 4.5V with 5µA current source. Methods of Reducing Audible Noise Switching-mode power converters have electronic and magnetic components that generate audible noise when the operating frequency is in the range of 20~20,000Hz. Even though they operate above 20kHz, they can make noise, depending on the load condition. Designers can employ several methods to reduce noise. Glue or Varnish The most common method involves using glue or varnish to tighten magnetic components. The motion of core, bobbin, and coil; and the chattering or magnetostriction of core, can cause the transformer to produce audible noise. The use of rigid glue and varnish helps reduce transformer noise, but can crack the core. This is because sudden changes in the ambient temperature cause the core and the glue to expand or shrink at a different rate. Figure 23. Equal Loudness Curves Ceramic Capacitor Using a film capacitor instead of a ceramic capacitor as a snubber capacitor is another noise-reduction solution. Some dielectric materials show a piezoelectric effect, depending on the electric field intensity. A snubber capacitor becomes one of the most significant sources of audible noise. It is possible to use a Zener clamp circuit instead of an RCD snubber for higher efficiency as well as lower audible noise. Adjusting Sound Frequency Moving the fundamental frequency out of the 2~4kHz range another method of reducing perceptible noise. Generally, humans are more sensitive to noise in the range of 2~4kHz. When the fundamental frequency of noise is located in this range, it is perceived as louder, although the noise intensity level is identical (refer to Figure 23, Equal Loudness Curves). If burst-mode operation is suspected to be a source of noise, this method may be helpful. If the frequency of burst-mode operation lies between 2~4 kHz, adjusting the feedback loop can shift the frequency. To reduce the burst operation frequency, increase a feedback gain capacitor (CF), opto-coupler supply resistor (RD), and feedback capacitor (CB); and decrease a feedback gain resistor (RF), as shown in Figure 24. © 2007 Fairchild Semiconductor Corporation FSDM311A • Rev.1.0.2 Figure 24. Typical Feedback Network of FPS™ Reference Materials AN-4134: Design Guidelines for Off-line Forward Converters Using Fairchild Power Switch (FPS™) AN-4137: Design Guidelines for Off-line Flyback Converters Using Fairchild Power Switch (FPS™) AN-4138: Design Considerations for Battery Charger Using Green Mode Fairchild Power Switch (FPS™) AN-4140: Transformer Design Consideration for Offline Flyback Converters Using Fairchild Power Switch (FPS™) AN-4141: Troubleshooting and Design Tips for Fairchild Power Switch (FPS™) Flyback Applications AN-4147: Design Guidelines for RCD Snubber of Flyback AN-4148: Audible Noise Reduction Techniques for FPS™ Applications www.fairchildsemi.com 10 FSDM311A — Green Mode Fairchild Power Switch (FPSTM) Application Information 0.400 10.16 0.373 9.47 A 8 C 0.036 0.9 TYP 5 8 R0.032 0.813 0.092 2.337 0.255 6.48 0.245 6.22 PIN #1 1 4 PIN #1 C 1 B TOP VIEW, OPTION 2 TOP VIEW, OPTION 1 D 0.070 1.78 0.045 1.14 7° TYP 0.135 3.43 0.125 3.18 7° TYP 0.210 5.33 MAX C 0.015 0.381 0.010 0.254 0.060 1.52 MAX 0.015 0.38 MIN 0.140 3.56 0.125 3.17 0.300 7.62 0.100 2.54 0.021 0.53 0.015 0.38 0.43 10.92 MAX 0.001 [0.025] M C SIDE VIEW FRONT VIEW NOTES: A. CONFORMS TO JEDEC MS-001, VARIATION BA B. CONTROLLING DIMENSIONS ARE IN INCHES. REFERENCE DIMENSIONS ARE IN MILLIMETERS. C DOES NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCHES OR 0.25MM. D DOES NOT INCLUDE DAMBAR PROTRUSIONS. DAMBAR PROTRUSIONS SHALL NOT EXCEED 0.010 INCHES OR 0.25MM. E. F. 0.320 8.13 0.300 7.62 DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009 DRAWING FILENAME: MKT-N08Erev8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com
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