FSV10150V

FSV10150V Ultra-Low VF Schottky Rectifier, 10 A, 150 V Features • • • • • • Ultra−Low Forward Voltage Drop Low Thermal Resistance Very Low Profile: Typical Height of 1.1 mm Trench Schottky Technology Green Molding Compound as per IEC61249 Standard These Devices are Pb−Free, Halogen Free and are RoHS Compliant www.onsemi.com Anode 1 3 Cathode Anode 2 Schottky Rectifier Specifications 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 150 V VRWM Working Peak Reverse Voltage 150 V VRMS RMS Reverse Voltage 106 V DC Blocking Voltage 150 V IF(AV) Average Rectified Peak Forward Surge Current 10 A IFSM Non−Repetitive Peak Forward Surge Current 180 A Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C VR TJ TSTG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2015 June, 2018 − Rev. 2 1 2 1 TO−277 CASE 340BQ MARKING DIAGRAM $Y&Z&3 FSV10150V $Y &Z &3 FSV10150V = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: FSV10150V/D FSV10150V THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 1) Symbol Parameter Minimum Land Pattern Maximum Land Pattern Unit RqJA Junction−to−Ambient Thermal Resistance 100 40 °C/W ΨJL Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Anode 15 12 °C/W Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Cathode 6 5 1. The thermal resistances (RqJA & ΨJL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F S F S F S F S Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol BVR Parameter Conditions Min Typ Max Unit 150 − − V Breakdown Voltage IR = 0.5 mA VF Forward Voltage Drop IF = 10 A − − 0.84 V IR Reverse Current VR = 150 V − − 20 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping† FSV10150V FSV10150V TO−277 3L (Pb−Free/Halogen Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FSV10150V TYPICAL PERFORMANCE CHARACTERISTICS 10 10 IR, Leakage Current (mA) IF, Forward Current (A) 100 TA = 150°C TA = 125°C 1 TA = 100°C TA = 75°C 0.1 TA = 25°C 0.01 0.0 0.2 0.4 0.6 0.8 TA = 100°C TA = 75°C 0.01 1E−3 TA = 25°C 20 30 40 50 60 70 80 90 100 VF, Forward Voltage (V) Percent of Rated Reverse Voltage (%) Figure 3. Typical Forward Characteristics Figure 4. Typical Reverse Characteristics 12 1000 800 IF, Forward Current (A) CJ, Junction Capacitance (pF) TA = 125°C 0.1 1E−4 1.0 TA = 150°C 1 600 400 200 10 8 6 4 2 0 0 1 10 0 100 25 50 75 100 125 150 VR, Reverse Bias Voltage (V) TC, Case Temperature (5C) Figure 5. Typical Junction Capacitance Figure 6. Forward Current Derating Curve www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−277−3LD CASE 340BQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13861G TO−277−3LD DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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