FSV1045V

Schottky Rectifier, Ultra-Low VF, 10 A, 45 V FSV1045V Description The FSV1045V Schottky rectifier offers break−through size and performance. The device is optimized for mobile charger applications. It sinks only 18 mA reverse current at high temperature and provides forward voltage drop of 0.18 V at 1 A operating current in a charger design. All this capability is packed into a small, flat−lead, TO−277 package, optimized for space−constrained applications. The FSV1045V supports a typical Z height of 1.1 mm. It is RoHS compliant and halogen free. It is also qualified for a wave soldering process. www.onsemi.com Anode 1 3 Cathode Anode 2 Schottky Rectifier 3 Features • Ultra−Low Forward Voltage Drop: ♦ • • • • • 0.41 V Typical at 10 A, TA = 25°C 0.44 V Maximum at 10 A, TA = 25°C Low Thermal Resistance Very Low Profile: Typical Height of 1.1 mm Meets MSL 1 per JESD22−A111 Full−Body Solder Immersion Non−DAP Option Only This Device is Pb−Free, Halogen Free and is RoHS Compliant ♦ 2 1 TO−277−3LD CASE 340BQ MARKING DIAGRAM $Y&Z&3 * Applications • Mobile Charger • Solar Panel • Reverse Polarity Protection $Y &Z &3 * = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Specific Device Code FSV1045 ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2020 April, 2020 − Rev. 1 1 Publication Order Number: FSV1045V/D FSV1045V ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Value Unit VRRM Peak Repetitive Reverse Voltage Parameter 45 V VRWM Working Peak Reverse Voltage 45 V VRMS RMS Reverse Voltage 32 V VR DC Blocking Voltage 45 V IO Average Rectified Output Current (Note 2) 10 A IFSM TL = 105°C Non−Repetitive Peak Forward Surge Current (Note 3) 300 A 820 pF Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C CJ Typical Junction Capacitance TJ TSTG VR = 4 V, 1 MHz Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All test conducted at TA = TJ = 25°C unless otherwise noted 2. Mounted on 30 mm x 30 mm FR4 PCB 3. Pulse condition: 8.3 ms half−sine wave. Test method is compliant with MIL standard (MIL−STD−750E) THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 4) Symbol Parameter Minimum Land Pattern Maximum Land Pattern Unit RqJA Junction−to−Ambient Thermal Resistance 100 40 °C/W ΨJL Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Anode 15 12 °C/W Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Cathode 6 5 4. The thermal resistances (RqJA & ΨJL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F S F S F S F S Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper www.onsemi.com 2 FSV1045V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol VBR VF Parameter Conditions Breakdown Voltage IT = 500 mA Forward Voltage Drop IF = 1 A Min TA = 25°C IF = 10 A TA = 125°C IF = 10 A Maximum Leakage Max V = VRWM Unit V V 0.28 0.41 IF = 1 A IR Typ 45 0.44 0.18 0.36 0.39 TA = 25°C 0.065 0.220 TA = 125°C 19 32 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping† FSV1045V FSV1045 TO−277−3LD (Pb−Free/Halogen Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 FSV1045V TYPICAL PERFORMANCE CHARACTERISTICS 10 100000 1 Reverse Current, IR [mA] Forward Current, IF [A] o TA= 150 C o TA= 125 C o TA= 25 C 0.1 T = 85oC A o TA= −55 C 0.01 1E−3 0.0 0.1 0.2 0.3 0.4 10000 1000 o TA=25 C 1 0.1 0.01 o TA=−55 C 10 15 20 25 30 35 40 45 Reverse Voltage, VR [V] Figure 3. Forward Current Characteristics Figure 4. Typical Reverse Characteristics 12 10000 Yjl (30mm x 30mm Pad) Average Current [A] Junction Capacitance, CJ [pF] o TA=150 C o 10 Forward Voltage, VF [V] 1000 10 8 Yjl (Min. Pad) 6 qja (30mm x 30mm Pad) 4 qja (Min. Pad) 2 100 1 10 0 100 Figure 5. Typical Junction Capacitance 300 250 200 150 100 50 0 20 40 60 80 25 50 75 100 125 150 Figure 6. Forward Current Derating 350 0 0 Ambient / Lead Temperature [5C] Reverse Voltage, VR [V] Peak Forward Surge Current, IFSM [A] TA=125 C 100 1E−3 0.5 o TA=85 C 100 Number of Cycles Figure 7. Surge Current Derating Curve www.onsemi.com 4 175 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−277−3LD CASE 340BQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13861G TO−277−3LD DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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