FSV1060V

Schottky Rectifier 10 A, 60 V Ultra−Low VF FSV1060V Description The FSV1060V schottky rectifier offers break−through size and performance. The device is optimized for mobile charger applications. It sinks only 13 mA reverse current at high temperature and provides forward voltage drop of 0.2 V at 1 A operating current in a charger design. All this capability is packed into a small, flat−lead, TO−277 package, optimized for space−constrained applications. The FSV1060V supports a typical Z height of 1.1 mm. It is RoHS compliant and halogen free. It is also qualified for a wave soldering process. www.onsemi.com Anode 1 Anode 2 3. Cathode Schottky Rectifier 3 Features • Ultra−Low Forward Voltage Drop: ♦ • • • • • 0.47 V Typical at 10 A, TA = 25°C 0.52 V Maximum at 10 A, TA = 25°C Low Thermal Resistance Very Low Profile: Typical Height of 1.1 mm Meets MSL 1 per JESD22−A111 Full−Body Solder Immersion Non−DAP Option Only These Devices are Pb−Free, Halogen Free and are RoHS Compliant ♦ 2 1 TO−277−3LD CASE 340BQ MARKING DIAGRAM Applications $Y&Z&3 FSV1060V • Mobile Charger • Solar Panel • Reverse Polarity Protection $Y &Z &3 FSV1060V = ON Semiconductor Logo = Assembly Plant Code = Date Code (Year & Week) = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2014 April, 2020 − Rev. 1 1 Publication Order Number: FSV1060V/D FSV1060V Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 60 V VRWM Working Peak Reverse Voltage 60 V VRMS RMS Reverse Voltage 42 V VR DC Blocking Voltage 60 V IO Average Rectified Output Current at TL = 90°C (Note 2) 10 A Non−Repetitive Peak Forward Surge Current (Note 3) 280 A IFSM CJ Typical Junction Capacitance, VR = 4 V, 1 MHz 550 pF TJ Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C TSTG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All test conducted at TA = TJ = 25°C unless otherwise noted. 2. Mounted on 30 mm x 30 mm FR4 PCB. 3. Pulse condition: 8.3 ms single half−sine wave. Test method is compliant with MIL standard (MIL−STD−750E). THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 4) Symbol Characteristic Minimum Land Pattern Maximum Land Pattern Unit RqJA Junction−to−Ambient Thermal Resistance 105 38 °C/W ΨJL Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Anode 18 13 °C/W Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Cathode 8 5 4. The thermal resistances (RqJA & ΨJL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F S F S F S F S Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper www.onsemi.com 2 FSV1060V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol BVR VF IR Min Typ Max Unit Breakdown Voltage Parameter IT = 500 mA 60 − − V Forward Voltage Drop IF = 1 A − 0.30 − V IF = 10 A − 0.47 0.52 IF = 1 A, TA = 125°C − 0.20 − IF = 10 A, TA = 125°C − 0.46 − V = VRWM − 0.056 0.220 V = VRWM, TA = 125°C − 13 − Maximum Leakage Conditions mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping† FSV1060V FSV1060V TO−277−3LD (Pb−Free/Halogen Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 FSV1060V TYPICAL PERFORMANCE CHARACTERISTICS 100000 TA = 150oC 10000 Reverse Current, I R[uA] Forward Current, IF [A] 10 1 TA = 125oC TA = −55oC 0.1 TA = 85oC TA = 25oC 0.01 1000 o 10 TA=150 C o TA=125 C o TA=85 C 100 o TA=25 C 1 0.1 0.01 0.0 0.1 0.2 0.3 0.4 o TA=−55 C 1E−3 10 0.001 0.5 15 20 Forward Voltage, VF [V] Figure 3. Forward Current Characteristics 30 35 40 45 50 55 60 Figure 4. Typical Reverse Characteristics 12 Average Current, [A] 10000 Junction Capacitance, CJ [pF] 25 Reverse Voltage, VR[V] 1000 Yjl (30mm x 30mm Pad) 10 8 Yjl (Min. Pad) 6 4 qja (30mm x 30mm Pad) 2 qja (Min. Pad) 100 1 10 0 100 Reverse Voltage, V R[V] Peak Forward Surge Current, IFSM [A] Figure 5. Typical Junction Capacitance 250 200 150 100 50 0 20 40 60 80 25 50 75 100 125 150 o Ambient / Lead Temperature, [ C] 175 Figure 6. Forward Current Derating Curve 300 0 0 100 Number of Cycles Figure 7. Surge Current Derating Curve www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−277−3LD CASE 340BQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13861G TO−277−3LD DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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