FSV1550V

Schottky Rectifier 15 A, 50 V Ultra−Low VF FSV1550V Features • • • • • • • • Ultra Low Forward Voltage Drop Low Thermal Resistance Very Low Profile: Typical Height of 1.1 mm Green Molding Compound as per IEC61249 Standard Non−DAP Option Only Qualified with Reflow (J−STD−020) and Solder Temperature 260°C Classification Lead Free in Compliance with EU RoHS 2011/65/EU Directive These Devices are Pb−Free, Halogen Free and are RoHS Compliant www.onsemi.com Anode 1 Anode 2 3. Cathode Schottky Rectifier 3 Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 50 V VRMS RMS Reverse Voltage 35 V DC Blocking Voltage 50 V IF(AV) Average Rectified Peak Forward Surge Current 15 A IFSM Non−Repetitive Peak Forward Surge Current 300 A Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C VR TJ TSTG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1 TO−277−3LD CASE 340BQ MARKING DIAGRAM $Y&Z&3 FSV1550V $Y &Z &3 FSV1550V = ON Semiconductor Logo = Assembly Plant Code = Date Code (Year & Week) = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 April, 2020 − Rev. 1 1 Publication Order Number: FSV1550V/D FSV1550V THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 1) Symbol Characteristic Minimum Land Pattern Maximum Land Pattern Unit RqJA Junction−to−Ambient Thermal Resistance 100 40 °C/W ΨJL Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Anode 15 12 °C/W Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Cathode 6 5 1. The thermal resistances (RqJA & ΨJL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F S F S F S F S Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol BVR VF IR CJ Parameter Conditions Min Typ Max Unit Breakdown Voltage IR = 0.5 mA 50 56 − V Forward Voltage Drop IF = 1 A − 0.28 − V IF = 5 A − 0.35 − IF = 15 A − 0.45 0.51 IF = 1 A, TA = 125°C − 0.18 − IF = 5 A, TA = 125°C − 0.28 − VR = 40 V − 60 − mA VR = 50 V − 82 320 mA VR = 50 V, TA = 125°C − 25 − mA VR = 4 V, f = 1 MHz − 824 − pF Reverse Current Junction Capacitance Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping† FSV1550V FSV1550V TO−277−3LD (Pb−Free/Halogen Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FSV1550V IR − REVERSE LEAKAGE CURRENT (mA) TYPICAL PERFORMANCE CHARACTERISTICS 100 o IF − FORWARD CURRENT (A) TA = 75 C o 10 TA = 125 C o TA = 150 C 1 o TA = 25 C 0.1 o TA = −55 C 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 100 10 o TA = 125 C 1 o TA = 75 C 0.1 o TA = 25 C 0.01 1E−3 1E−4 o TA = −55 C 1E−5 10 VF − FORWARD VOLTAGE (V) IFSM − PEAK FORWARD SURGE CURRENT (A) 8000 7000 6000 5000 4000 3000 2000 1000 10 100 VR − REVERSE VOLTAGE (V) Figure 5. Typical Junction Capacitance TL (Cathode, 3cm x 3cm Pad) 14 TL (Cathode, Min. Pad) 12 10 8 TA (3cm x 3cm Pad) 6 4 2 TA (Min. Pad) 0 0 25 50 75 100 40 50 125 150 400 350 300 250 200 150 100 50 0 1 10 100 NUMBER OF CYCLES Figure 6. Maximum Non−Repetitive Peak Forward Surge Current 18 AVERAGE CURRENT (A) CJ − JUNCTION CAPACITANCE (pF) 9000 16 30 Figure 4. Typical Reverse Characteristics 10000 1 20 VR − REVERSE VOLTAGE (V) Figure 3. Typical Forward Characteristics 0 0.1 o TA = 150 C 175 o AMBIENT / LEAD TEMPERATURE ( C) Figure 7. Forward Current Derating Curve www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−277−3LD CASE 340BQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13861G TO−277−3LD DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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