FSV530AF

FSV530AF Schottky Barrier Rectifier Features • • • • • • • Low Forward Voltage Drop: 0.54 V Maximum at 5 A, TA = 25°C Ultra Thin Profile − Maximum Height of 1.0 mm High Surge Capacity UL Flammability 94V−0 Classification MSL 1 Green Mold Compound These Devices are Pb−Free, Halogen Free Free and are RoHS Compliant www.onsemi.com 1 Cathode 2 Anode Schottky Barrier Rectifier Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit VRRM Recurrent Peak Reverse Voltage 30 V VRMS RMS Reverse Voltage 21 V DC Blocking Voltage 30 V IF(AV) Average Forward Current 5 A IFSM Peak Forward Surge Current: 8.3 ms Single Half Sine−Wave Superimposed on Rated Load (JEDEC Method) 100 A TJ Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C VR TSTG Parameter Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DO−214AD (SMAF) CASE 403AD MARKING DIAGRAM $Y&Z&3 FSV530AF Band Indicates Cathode $Y &Z &3 FSV530AF = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 May, 2018 − Rev. 2 1 Publication Order Number: FSV530AF/D FSV530AF THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 1) Symbol Value Unit ΨJL Typical Thermal Characteristics, Junction−to−Lead (Note 2) Characteristic 15 °C/W RqJA Typical Thermal Resistance, Junction−to−Ambient 120 °C/W 1. Per JESD51−3 recommended thermal test board. Device mounted on FR−4 PCB, board size = 76.2 mm x 114.3 mm. 2. Thermocouple soldered at cathode lead. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit VF Forward Voltage IF = 5 A − − 0.54 V IR Reverse Current VR = 30 V − − 100 mA Trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A − 15.72 − ns CJ Junction Capacitance VR = 0 V, f = 1 MHz − 159 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping† FSV530AF FSV530AF DO−214AD (SMAF) (Pb−Free/Halogen Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FSV530AF TYPICAL PERFORMANCE CHARACTERISTICS 100 IR, Reverse Current (mA) IF, Forward Current (A) 6 5 4 3 2 1 0 0 25 50 75 100 125 TJ = 150°C 10 TJ = 125°C 1 TJ = 75°C 0.1 20 ~ 45 V 0.01 TJ = 25°C 0.001 150 10 15 20 25 30 35 40 45 TC, Case Temperature (5C) VR, Peak Reverse Voltage (V) Figure 1. Forward Current Derating Curve Figure 2. Typical Reverse Characteristics C, Junction Capacitance (pF) 800 IF, Forward Current (A) 10 TJ = 150°C TJ = 125°C 1 TJ = 75°C TJ = 25°C 0.1 20 ~ 45 V 0.01 0 0.2 0.4 600 400 200 0 0.6 0 40 VF, Forward Voltage (V) 10 20 30 VR, Reverse Voltage (V) Figure 3. Typical Forward Characteristics Figure 4. Typical Junction Capacitance www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA−FL CASE 403AD ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13439G SMA−FL DATE 14 JUL 2020 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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